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IRFH5300TRPBFIRN/a8000avai30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package


IRFH5300TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN packageFeaturesLow R (≤ 1.4mΩ) Lower Conduction LossesDSonLow Thermal Resistance to PCB (≤ 0.5°C/W) Enabl ..
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IRFH5300TRPBF
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
International
Tait Rectifier
|RFH5300PbF
HEXFET© Power MOSFET
Vos 30 V
RDS(on) max
(@Vss=10V) 1.4 mg
A (typical) 50 nC
Re. (typical) 1.3 f2
(@Tc(Bottom) = 25°C) 100© A PQFN 5X6 mm
Applications
. OR-ing MOSFET for 12V (typical) Bus in-Rush Current
. Battery Operated DC Motor Inverter MOSFET
Features and Benefits
Features Benefits
Low RDSon (s: 1.4mQ) Lower Conduction Losses
Low Thermal Resistance to PCB (S 0.5°C/W) Enable better thermal dissipation
100% Rg tested Increased Reliability
Low Profile (s 0.9 mm) results in Increased Power Density
Industry-Standard Pinout => Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier
MSL1, Industrial Qualification Increased Reliability
Orderable part number Package Type Standard Pack . Note
Form Quantity
IRFH5300Tf2PBF PQFN 5mm x 6m Tape and Reel 4000
lfFH5300TRPBF PQFNémmaeemm IapeanaLReel 400 EOL notice # 259
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
Vas Gate-to-Source Voltage A 20
ID © TA = 25°C Continuous Drain Current, Ves © 10V 40
ID @ TA = 70°C Continuous Drain Current, I/ss @ 10V 32
b © TC(sottom) = 25°C Continuous Drain Current, Vas @ 10V 100 (E A
lr, @ Tqamwm, = 100°C Continuous Drain Current, I/ss @ 10V 100 ©
IBM Pulsed Drain Current C) 400
PD @TA = 25°C Power Dissipation s 3.6
PD @ TC(Bottom) = 25°C Power Dissipation s 250 W
Linear Derating Factor s 0.029 W/°C
TJ Operating Junction and -55 to + 150 =
TSTG Storage Temperature Range
Notes 0) through © are on page 89
fl © 2014 International Rectifier Submit Datasheet Feedback July 7, 2014

Egg mAlltWiI0NA,
Static tii) T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Bl/oss Drain-to-Source Breakdown Voltage 30 - - V I/ss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.02 - VPC Reference to 25°C, ID = 1mA
RDSW Static Drain-to-Source On-Resistance - 1.1 1.4 mo I/ss = 10V, ID = 50A Cl)
- 1.7 2.1 Vss = 4.5V, ID = 50A ©
V930,.) Gate Threshold Voltage . . 1.35 1.8 2.35 V Vos = I/ss, ID = 150PA
AN/sam) Gate Threshold Voltage Coefficient - -6.2 - mV/°C
loss Drain-to-Source Leakage Current - - 5.0 pA Vos = 24V, l/ss = 0V
- - 150 l/rss = 24V, Vss = 0V, T, = 125°C
lass Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Forward Transconductance 190 - - S Vos = 15V, ID = 50A
Q, Total Gate Charge - 120 - nC Vss = 10V, Vos = 15V, ID = 50A
Q, Total Gate Charge - 50 75
0931 Pre-Vth Gate-to-Source Charge - 12 - Vos = 15V
0952 Post-Vth Gate-to-Source Charge - 6.5 - n C Vas = 4.5V
di Gate-to-Drain Charge - 16 - ID = 50A
ngd, Gate Charge Overdrive - 16 - See Fig.17 & 18
QSW Switch Charge (Qgs2 + di) - 23 -
Qoss Output Charge - 30 - nC Vos = 16V, Vss = 0V
Re Gate Resistance - 1.3 - Q
tum") Turn-On Delay Time - 26 - VDD = 15V, I/ss = 4.5V
t, Rise Time - 30 - ns ID = 50A
tom Turn-Off Delay Time - 31 - Rs--1.80
k Fall Time - 13 - See Fig.15
Ciss Input Capacitance - 7200 - Vss = 0V
cu, Output Capacitance - 1360 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 590 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy C) - 420 mJ
|AR Avalanche Current co - 50 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - _ 100 © MOSFET symbol D
(Body Diode) A showing the a
G, Pulsed Source Current - - 400 integral reverse s
(Body Diode) C) p-n junction diode.
Va, Diode Forward Voltage - - 1.0 V Tu = 25°C, ls = 50A, Vss = 0V (3)
trr Reverse Recovery Time - 34 51 ns T, = 25°C, IF = 50A, VDD = 15V
Q,, Reverse Recovery Charge - 68 100 nC di/dt = 200A/ps ©
Forward Turn-On Time
Time is dominated by parasitic Inductance
Thermal Resistance

Parameter Typ. Max. Units
Ro:: (Bottom) Junction-to-Case Ci) - 0.5
Rax, (Top) Junction-to-Case (ii) - 15 oC/W
Ram Junction-to-Ambient s - 35
RNA (<10s) Junction-to-Ambient G) - 21
© 2014 International Rectifier Submit Datasheet Feedback July 7,2014
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