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IRFH5020TRPBFIRN/a1010avai200V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package


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IRFH5020TRPBF
200V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
International
TGR. Rectifier
IRFH5020PbF
HEXFET® Power MOSFET
v03 200 v
RDS(on) max 55 mf2
(ON/ss = 10V)
as (typical) 36 nC
RG (typical) 1.9 Q
(@Tc(Bottom) = 25°C)
Applications
PQFN 5X6 mm
q Secondary Side Synchronous Rectification
o Inverters for DC Motors
q DC-DC Brick Applications
. Boost Converters
Features and Benefits
Features Benefits
Low RDSon Lower Conduction Losses
Low Thermal Resistance to PCB (s 0.8°C/W) Enable better thermal dissipation
100% Rg tested Increased Reliability
Low Profile (s: 0.9 mm) results in Increased Power Density
Industry-Standard Pinout 2 Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier
MSL1, Industrial Qualification Increased Reliability
Orderable part number Package Type W ''t"'ka-uantit, Note
IRFH5020THPbF PQFN 5mm x6nm Tape and Reel 4000
+RFH5020$R2PBF PQFNémmaeSmm Ttape-and-Reel 400 EOL notice #259
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 200 V
VGS Gate-to-Source Voltage i 20
ID @ TA = 25°C Continuous Drain Current, I/ss @ 10V 5.1
ID @ TA = 70°C Continuous Drain Current, I/ss @ 10V 4.1
Irs @ TC(Bottom) = 25°C Continuous Drain Current, Vss © 10V 34
ID @ Tcaaonom) = 100°C Continuous Drain Current, I/ss @ 10V 21 A
ID @ Taro,,) = 25°C Continuous Drain Current, I/ss @ 10V 7.8
ID @ Temp, = 100°C Continuous Drain Current, I/ss @ 10V 4.9
Irv, Pulsed Drain Current C) 63
PD OT, = 25°C Power Dissipation S 3.6 W
Pr, @ Tcaop) = 25°C Power Dissipation co 8.3
Linear Derating Factor (D 0.07 W/°C
T J Operating Junction and -55 to + 150 o C
TSTG Storage Temperature Range
Notes OD through s are on page 8
fl © 2014 International Rectifier Submit Datasheet Feedback May 5, 2014

I‘S'QR
|RFH5020PbF
Static © T,, = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDss Drain-to-Source Breakdown Voltage 200 - - V Vss = 0V, ID = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 0.22 - V/°C Reference to 25°C, ID = 1mA
RDswn) Static Drain-to-Source On-Resistance - 47 55 mn Vas = 10V, ID = 7.5A ©
VGsnh) Gate Threshold Voltage 3.0 - 5.0 V Vos = Ves: ID = 150PA
AVGsum Gate Threshold Voltage Coefficient - -12 - mV/°C
Iross Drain-to-Source Leakage Current - - 20 HA Vos = 200V, Vss = 0V
- - 1.0 mA Vos = 200V, I/ss = 0V, Tu = 125°C
less Gate-to-Source Forward Leakage --.- -- 100 n A Vas = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = -20V
gts Forward Transconductance 18 - - S Vos = UN, ID = 7.5A
00 Total Gate Charge - 36 54
_Qg§1 Pre-Vth Gate-to-Source Charge - 8.6 - Vos = 100V
-ass Post-Vth Gate-to-Source Charge - 2.1 - n C Vas = 10V
qu Gate-to-Drain Charge - 11 - ID = 7.5A
qud, Gate Charge Overdrive - 14 - See Fig.17 & 18
st Switch Charge (Qas + qu) - 13 -
Qoss Output Charge - 13 - nC Vos = 16V, Vas = 0V
RG Gate Resistance - 1.9 - Q
two", Turn-On Delay Time - 9.3 - VDD = 100V, Vss = 10V
tr Rise Time - 7.7 - ns ID = 7.5A
two Turn-Off Delay Time - 21 - RG=1.89
ti Fall Time - 6.0 - See Fig.15
Ciss Input Capacitance -- 2290 -- Vas = 0V
2m Output Capacitance - 120 - pF Vos = 100V
C,SS Reverse Transfer Capacitance - 33 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © - 320 m]
IAR Avalanche Current (D _ 7.5 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current _ _ 7.5 MOSFET symbol D
(Body Diode) A showing the
G, Pulsed Source Current _ _ 63 integral reverse G
(Body Diode) (D p-n junction diode. S
I/so Diode Forward Voltage - - 1.3 V Tu = 25°C, ls = 7.5A, I/ss = 0V ©
L, Reverse Recovery Time - 45 68 ns T J = 25°C, IF = 7.5A, VDD = 100V
a,, Reverse Recovery Charge - 459 689 nC di/dt = SOOA/ps ©
ton Forward Turn-On Time Time is dominated by parasitic Inductance
Thermal Resistance

Parameter Typ. Max. Units
Rm (Bottom) Junction-to-Case 0.5 0.8
Rm (Top) Junction-to-Case co - 15 0cm
Rm Junction-to-Ambient S - 35
Ra, (<10s) Junction-to-Ambient © - 21
2 © 2014 International Rectifier Submit Datasheet Feedback May 5, 2014
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