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IRFG6110
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
International
TOR Rectifier
POWER MOSFET
THRU-HOLE (MO-036AB)
Product Summary
Part Number RDS(on) ID CHANNEL
IRFG6110 0.79 1.0A N
IRFG6110 1.49 -0.75A P
HEXFET® MOSFET technology is the key to International
Rectirer's advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resis-
tance combined with high transconductance. HEXFETtran-
sistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
PD - 90436F
IRFGG1 1 O
JANTX2N7336
JANTXV2N7336
REF:MIL-PRF-I 9500I598
100V, Combination 2N-2P-CHANNEL
HEXFET® MOSFETTECHNOLOGY
T if) iirf
MO-036AB
ease of paralleling and electrical parameter temperature Features:
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers, ll Simple Drive Requirements
audio amplifiers, high energy pulse circuits, and virtually ll Ease of Paralleling
any application where high reliability is required. The l Hermetically Sealed
HEXFET transistor's totally isolated package eliminates the II Electrically Isolated
need for additional isolating material between the device I: Dynamic dv/dt Rating
and the heatsink. This improves thermal efficiency and II Light-weight
reduces drain capacitance.
Absolute Maximum Ratings (Per Die)
Parameter N-Channel P-Channel Units
ID @ VGS =1: 10V, TC = 25°C Continuous Drain Current 1.0 -0.75
ID @ VGS =1: 10V, TC = 100°C Continuous Drain Current 0.6 -0.5 A
IDM Pulsed Drain Current C) 4.0 -3.0
PD @ TC = 25°C Max. Power Dissipation 1.4 1.4 W
Linear Derating Factor 0.011 0.011 W/°C
VGS Gate-to-Source Voltage 120 t20 V
EAS Single Pulse Avalanche Energy 75 © 75 (CS mJ
IAR Avalanche Current CO - - A
EAR Repetitive Avalanche Energy (D - - mJ
dv/dt Peak Diode Recovery dv/dt 5.5 © -5.5 © V/ns
TJ Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 (0.63 in./1.6 mm from case for 10s)
Weight 1.3 (Typical) g
For footnotes refer to the last page
0411 6/02
IRFG6110 International
Electrical Characteristics For Each N-Channel Devicean--2soc o,,essoti,5r,e.S,t,E,tiili,tr
Parameter Min Typ Max Units Test Conditions
BVDss Drain-to-Source Breakdown Voltage 100 - - V VGS = 0V, ID = 1.0mA
ABVDSS/ATJ Temperature Coemcient of Breakdown - 0.13 - V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.7 VGS = 10V, ID = 0.6A co
Resistance - - 0.8 VGS = 10V, ID = 1.0A
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs = VGS, ID = 250pA
gts Forward Transconductance 0.86 - - S (M) VDS > 15V, IDS = 0.6A ©
loss Zero Gate Voltage Drain Current - - 25 “A VDS= 80V, VGs= 0V
- - 250 VDs = 80V,
VGS = 0V, TJ =125°C
less Gate-to-Source Leakage Forward - - 100 nA VGS = 20V
less Gate-to-Source Leakage Reverse - - -100 VGS = -20V
Qu Total Gate Charge - - 15 VGS =1OV, ID = 1.0A,
Qqs Gate-to-Source Charge - - 7.5 nC VDS = 50V
Qgd Gate-to-Drain ('Miller') Charge - - 7.5
td(on) Turn-On Delay Time - - 20 VDD = 50V, ID = 1.0A,
tr Rise Time - - 25 ns VGS =10V, RG = 7.59
td(off) Turn-Off Delay Time - - 40
tf FallTime - - 40
LS + LD Total Inductance - 10 - nH Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
Ciss Input Capacitance - 180 - VGS = 0V, VDs = 25V
Coss Output Capacitance - 82 - pF f= 1.0MHz
Crss Reverse Transfer Capacitance - 15 -
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter Min Typ Max Units Test Conditions
ls Continuous Source Current (Body Diode) - - 1.0
ISM Pulse Source Current (Body Diode) C) - - 4.0 A
VSD Diode Forward Voltage - - 1.5 V T] = 25°C, Is = 1.0A, VGS = 0V CI)
trr Reverse Recovery Time - - 200 nS Tj = 25°C, IF = 1.0A, di/dt S 100A/us
QRR Reverse Recovery Charge - - 0.83 nC VDD 5 50V ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Tum-on speed is substantially controlled by Ls + LD.
Thermal Resistance (Per Die)
Parameter Min Typ Max Units TestConditions
RthJC Junction-to-Case - - 17 ''C/1/V
RthJA Junction-to-Ambient - - 90 Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
