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IRFF9210
-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package
International
IEZR Rectifier
PD - 903 82
REPETITIVE AVALANCHE AND tiv/tit RATED
HEXFET®TRANSISTORS
THRU-HOLE (TO-205AF)
Product Summary
Part Number BVDSS RDS(on) ID
IRFF9210 -200V 3.0Q -1.5A
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
IRFF92 10
200V, P-CHANNEL
Features:
I: Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
Parameter Units
ID @ VGS = -10V, TC = 25°C Continuous Drain Current -1.5
ID @ VGS = -10V, TC = 100°C Continuous Drain Current -0.97 A
IDM Pulsed Drain Current C) -6.0
PD @ TC = 25°C Max. Power Dissipation 15 W
Linear Derating Factor 0.12 W/°C
VGS Gate-to-Source Voltage £20 V
EAS Single Pulse Avalanche Energy © 72 m1
IAR Avalanche Current Cf) - A
EAR Repetitive Avalanche Energy co - m.)
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
T] Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 (0.063 in. (1.6mm) from case for los)
Weight 0.98(typica1) g
For footnotes refer to the last page
1
01/23/01
IRFF9210 International
TOR Rectifier
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage -200 - - V VGS = 0V, ID = -1.0mA
ABVDss/ATJ Temperature Coefficient of Breakdown - -0.22 - VPC Reference to 25°C, ID = -1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 3.0 Q VGS = -10V, ID = -0.97A ©
Resistance - - 3.45 VGS =-10V, 1D =-l.5A co
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V VDS = VGS, ID = -250pA
gfs Forward Transconductance 0.7 - - S (U) VDS > -15V, IDS = -O.97A co
IDSS Zero Gate Voltage Drain Current - - -25 VDS=-l60V, VGs=0V
- - -250 WA VDS = -160V
VGS = 0V, T] = 125°C
IGSS Gate-to-Source Leakage F orward - - -100 VGS = -20V
IGSS Gate-to-Source Leakage Reverse - - 100 nA VGS = 20V
Qg Total Gate Charge 3.7 - 8.9 VGS =-10V, ID = -1.5A
oy Gate-to-Source Charge 0.9 - 2.1 nC VDS= -100V
Qgd Gate-to-Drain (Niller') Charge 17 - 3.9
td(0n) Turn-On Delay Time - - 15 VDD = -100V, ID = -1.5A,
tr Rise Time - - 25 RG =75!)
Wom Turn-Off Delay Time - - 15 ns
tf Fall Time - - 15
LS + LD Total Inductance - 7.0 - nH Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Ciss Input Capacitance - 170 VGS = 0V, VDS = -25V
Cogs Output Capacitance - 54 - pF f = 1.0MHz
Crss Reverse Transfer Capacitance - 17 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - -1.5 A
ISM Pulse Source Current (Body Diode) (I) - - -6.0
VSD Diode Forward Voltage - - -5.8 V Tj = 25°C, Is =-l.5A, VGS = 0V ©
trr Reverse Recovery Time - - 300 nS Tj = 25°C, IF = -1.5A, di/dt S -100A/us
QRR Reverse Recovery Charge - - 3.0 “C VDD S -50V @
ton F orward Turn-On Time Intrinsic turn-on time is negligible. Tum-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case - - 8.3 °C/W
RthJA Junction-to-Ambient - - 175 Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
