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IRFDC20
600V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
International
IOR Rectifier
HEXFET® Power MOSFET
PD -9.1228
IRFDC20
q Dynamic dv/dt Rating
0 Repetitive Avalanche Rated L)
o For Automatic Insertion VDSS = 600V
. End Stackable
. Fast Switching " RDs(on) = 4.49
. Ease of paralleling
q Simple Drive Requirements ID = 0.32A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The 4-pin DIP package is a Iow-cost machine-insertable case style which can be
stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain
serves as a thermal link to the mounting surface for power dissipation levels up to
1 watt.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25''C Continuous Drain Current, VGS @ 10 V 0.32
ID @ Tc = 100°C Continuous Drain Current, VGs @ 10 V 0.20 A
IDM Pulsed Drain Current OD 2.6
Pro @Tc = 25''C Power Dissipation 1.0 W
Linear Derating Factor 0.0083 W/''C
VGs Gate-to-Source Voltage I20 V
EAS Single Pulse Avalanche Energy © 50 mJ
IAR Avalanche Current© 0.32 A
EAR Repetitive Avalanche Energy (D 0.10 m]
dv/dt Peak Diode Recovery dv/dt © 3.0 V/ns
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter
Typ. Max. Units
Junction-to-Ambient
- 120 "CAN
Revision 0
IRFDC20
Electrical Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 600 - - V VGS = 0V, ID = 250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.88 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 4.4 n VGS = 10.0V, ID = 0.19A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = N/ss, ID = 250PA
gfs Forward Transconductance 1.4 - - S VDs = UN, ID = 1.3A
loss Drain-to-Source Leakage Current - - 25 p A Vos = 600V, VGs = 0V
- - 250 Vos = 480V, Ves = 0V, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 VGS = 20V
Gate-to-Source Reverse Leakage - - -100 nA I/ss = -20V
ug Total Gate Charge - - 18 ID = 2.0A
Qgs Gate-to-Source Charge - - 3.0 nC Vos = 360V
di Gate-to-Drain ("Miller") Charge - - 8.9 VGs = 10V ©
td(on) Turn-On Delay Time - 10 - VDD = 300V
t, Rise Time - 23 - ns ID = 2.0A
tum) Turn-Off Delay Time - 30 - Rs = 189
tt Fall Time - 25 - RD = 1509 ©
Lo Internal Drain Inductance - 4.0 - Between lead, D
6mm (0.25in.)
Ls Internal Source Inductance - 6.0 - nH from package
and center of G J
die contact c
Ciss Input Capacitance - 350 - VGs = 0V
Coss Output Capacitance - 48 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 8.6 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol 7,.“3
. - - 0.32 . A cr,
(Body Diode) A showing the i] H”
ISM Pulsed Source Current - - 2 6 integral reverse 'up,. " 1 jc','
(Body Diode) OD . p-n junction diode. "--'" ',
Vso Diode Forward Voltage - - 1.6 V To = 25°C, Is = 0.32A, VGS = 0V (4)
trr Reverse Recovery Time - 290 580 ns To = 25°C, IF = 2.0A
Qrr Reverse RecoveryCharge - 0.67 1.3 pC di/dt = 100/Vps (4)
ton Forward Tum-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L5+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature.
© VDD = 50V, starting To = 25°C. L = 54mH
RG = 259, IAS = 1.3A.
(3 Isro 5 4.4A, di/dt S 90/Ups, I/oo S V(BR)DSS!
Tu f 150°C
© Pulse width s: 300ps; duty cycle 3 2%.
