IRFD9020 ,HEXFET TRANSISTORS P CHANNEL HEXDIPFeatures
The HEXFET8 technology is the keyto International Rectifi- I For Automatic Insertion
e ..
IRFD9020 ,HEXFET TRANSISTORS P CHANNEL HEXDIPApplications include motor control.
audio amplifiers, switched mode converters, control circuits
..
IRFD9020 ,HEXFET TRANSISTORS P CHANNEL HEXDIPfeatures of the more common N-Channel I Excellent Temperature Stability
HEXFETs such as voltage co ..
IRFD9024 ,-60V Single P-Channel HEXFET Power MOSFET in a HEXDIP packageInternational
mRectitier
HEXFETO Power MOSFET
Dynamic dv/dt
For Automatic
End Stackabl ..
IRFD9110 ,0.7A/ 100V/ 1.200 Ohm/ P-Channel Power MOSFETIntemational
TOR Rectifier
PD-9.389G
IRFD911O
HEXFETO Power MOSFET
q Dynamic dv/dt Rat ..
IRFD9113 , -0.6A and -0.7A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs
ISL6412IRZ ,Triple Output/ Low-Noise LDO Regulator with Integrated Reset Circuitapplications. The IC asserts a RESET signal - Short circuit protectionwhenever the VIN supply volta ..
ISL6412IRZ-TK , Triple Output, Low-Noise LDO Regulator with Integrated Reset Circuit
ISL6414IR ,Triple Output/ Low-Noise LDO Regulator with Integrated Reset CircuitFeatureswith Integrated Reset Circuit• Small DC-DC Converter SizeThe ISL6414 is an ultra low noise ..
ISL6414IR ,Triple Output/ Low-Noise LDO Regulator with Integrated Reset Circuitfeatures ultra low noise that does not • Ultra-Low Dropout Voltagetypically exceed 30µV RMS to aid ..
ISL6414IRZ ,Triple Output/ Low-Noise LDO Regulator with Integrated Reset CircuitApplicationsfree material sets; molding compounds / die attach materials and • PRISM® 3, PRISM GT™, ..
ISL6414IRZ-TK , Triple Output, Low-Noise LDO Regulator with Integrated Reset Circuit
IRFD9020
HEXFET TRANSISTORS P CHANNEL HEXDIP
...u -- nu - I _
“E D I] “555“53 MiillyqI1q sl] Data SheetNo.PD-9.462A
INTERNATIONAL RECTIFIER T-37-25
INTERNATIONAL RECTIFIER ISQR
"ED"'En""rl'"V"'lls"rip'ts nmmi:::isiesae:t
P-CHANNEL _ n lllRllF©)SlK(0)Ellliill
HEXBIW
1-WATT RATED POWER MOSFETs tl
IN A 4-PIN, DUAL-IN-LINE PACKAGE 8
-50 Volt, 0.28 Ohm, 1-Watt HEXDIP Features
The HEXFET8 technology is the key to International Rectifi- n For Automatic Insertion
er's advanced line of power MOSFET transistors. The em- I: C t E d St k bl
clent geometry and unique processing of the HEXFET Orly , .n ac a e
design achieve very low on-state resistance combined with " Fast Switching
high transconductance and extreme device ruggedness. I: Low Drive Current
The P-Channel HEXFETs are designed for application which '
require the convenience of reverse polarity operation. They Easily Paralleled . .
retain all of the features of the more common N-Channel Excellent Temperature Stability
HEXFETs such as voltage control, very fast switching, ease of - . .
paralleling, and excellent temperature stability. P Channel Versatility .
P-Channel HEXFETs are intended for use In power stages
where complementary symmetry with N-Channel devices Product Summary
offers circuitsimplification. They are also very useful in drive
stages because ofthe circultversatility offered by the reverse Part Number vrk RDS(on) I D
polarity connectlon. Applications include motor control.
audio amplifiers, switched mode converters, control circuits IRFD9020 -50V 0,280 -1.6
and pulse amplifiers.
IRF09022 -50V 0.830 -1.4
Wan 502mm
IIHGNII
"T'" " -rrTrttte'
140 MI"
Ctrl-ttrt t f
CASE STYLE AND DIMENSIONS
l II IO ossI_ //
us ms-est- I I
ON (0 In"
a mo im
an til aanuL,‘ l-c, HLAEES
tP-Ho Lu mom
"ft, " tACES
norss: n, Hunts
OD mums Tit sumo 05 mos man In msmunou.
CD muls In msnum IgAu csurzns
Case Style HD-t (Similar to JEDEC Outline MO-OO1AN)
Dimensions in Millimeters and (Inches)
IRFD9020,IRFD9022 Devices ME D [I M!iSttSi 0003““ 7 [I
. INTERNATIONAL RECTIFIER T-37-25
Absolute Maximum Ratings
Parametev
Drain -
Current
Drain Current
' Source
Linear
Inductive Currant, Flg. =
Current Fig.
Current) o -2.2
Junction and
Rang -65 to 150
Storage
lead Temperature 300 (0.063 In. (1.6mm) from case lb: 10sl
Electrical Characteristics tii) Tc = 25°C (Unless Otherwise Specified)
Pelameter Typa Min. Typ. Max. Units Test Conditions
BVDSS Drain - Source Breakdown Voltage IRFDSOZO -titt - - V vas = 0V
IRFD9022 ID " -250PA
VGS(lh) Gate Threshold Voltage ALL -2.0 - -4.0 V VDS " V65, ID = -250 PA
'GSS Gate-Soutce Leakage Forward ALL - - -.600 nA V65 = -QOV
'GSS Gate-Soulce Leakage Reverse ALL - - 500 nA VGS = 20V
loss Zero Gate Voltage Drah Current ALL - - -250 PA V05 = Max. Rating. VGS = 0V
- - 4000 M VDS = Max. Rating x 0.8, VGS = 0V, Tc = 125°C
I tht-State Drain Current a) IRFDSOZO -1.6 - - A
Mon) IRFD9022 -4.4 - - A Vos > 'D(on) M RDstunImax.rVGs = MOV
RDS(on) Static DraIn-Saurca OwState Resistance G) IRFDSOZO - 0.20 0.28 tt - - _ -
. IRFD9022 - 0.28 0.33 a ve, - 10v, ID - 1.1A
Ws Forwayd Transconductancs © AU. 1.3 t.4 - so VDS w 2 x V65, Ins _ -t.tA
clss Input Capacitance ALL - 480 pF VGS = oy, VDS = -26tf = 1.0 MHz
C053 Output Capacitance AU. - 320 pF See Hg. 10
Crss Reverse Transfer Capacitance ALL - 58 pF
tdton) Tum-On Delay Time AU. - 8.2 12 ns VDD = -25V, ID '. -9.7A, Re a 189, “D - 2.40
fr Rise Time ALL - 57 86 us See Fig. 16
tyiufit TurmOft Delay Time AU. - 12 18 ns (MOSEET switching time: am essentially Independent of
tt Fall Time ALL - 25 38 ns opermitm tempgratunU -
Total Gate Charge V55 = -10V, ID = .-9,7A, VDS = 0.8 Max. Rating.
09 lGate-Source Plus GateDrain) ALL - 17 " " See Fig. 17 for test circuit. (Gate charge is essentially
the Gate-Source Charge 7 ALL - 4.1 " nC Independent of optsrating trrmperattmsl
09d Gate-Drain ("Miller") Charge ALL - 5.7 8.6 nC
LD Internal Drain Inductance ALL - 4.0 - nH Measured from the _ Motfifigd MOSFET syrn
drain lead, 6mm (0.25 in.) showing the "
ty package to center of infernal device
bs Internal Source Inductance ALL - 6.0 - nH Measured from the source
lead, 6mm (025 in.) from
package to source bonding
Thermal Resistance
l RNA JunctlorrtoAmigimt i AU. I - l - r 120 LKIW©I Typical socket mount I
C-1 64
