IRFD220 ,0.8A/ 200V/ 0.800 Ohm/ N-Channel Power MOSFETPD-9.417F
IRFD220
Interhationaf
Isak Rectifier
HEXFET® Power MOSFET
. Dynamic dv/dt Ra ..
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IRFD220
0.8A/ 200V/ 0.800 Ohm/ N-Channel Power MOSFET
pier,'!:),').!:,,!,''
1:212 Rectifier
PD-9.417F
IFIFD220
HEkFETm) Power MOSFET
0 Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
0 For Automatic Insertion
o End Stackable
0 FastSwitching
0 Ease of Paralleling
0 Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
Vass = 200V
RDS(OH) = 0.809
ID = 0.80A
on-resistance and cost-effectiveness.
The 4-pin DIP package is a 10w cost machine-insertable case style which can
be stacked in multiple combinations on standard 0.1 inch pin centers. The dual.
drain serves as a thermal link to 1he mounting surface for power dissipation
levels up to 1 watt.
Absolute Maximum Ratings
Parameter Max. Units
ID a To = 25°C Continuous Drain Current, Vas © 10 V 0.80
lo a To = 100°C Continuous Drain Current, Vas tit 10 V 0.50 A
loM Pulsed Drain Current co 6.4
Po @ To = 25°C Power Dissipation 1.0 W
Linear Derating Factor 0.0083 WPC
Vas Gate-to-Source Voltage d:20 V
EAS Single Pulse Avalanche Energy © 260 ml
IAR Avalanche Current (O 5.2 A
EAR l . Repetitive Avalanche Energy (i) 0.10 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
Tu Operating Junction and -55 to +150
TSTG Storage Temperature Range (
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rtos Junction-to-Ambient - - 120 °CNV
IRFD220
Electrical Characteristics © Tg = 25°C (unless otherwise specified)
Parameter Min, Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V VGs=0V, lo: 250IsA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient -..- 0.29 - VPC Reference to 25°C, JD: 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.80 9 Vss=10V, ltr=0.48A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs=VGs, ID: 250pA
gis Forward Transconductance 0.60 - - S VDS=50V, lo=0.48A ©
loss Drain-to-Source Leakage Current - - 25 WA Vos=200V, Vtss=OV
- - 250 Vos=160V, Vos=0V, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A Ves=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
th Total Gate Charge - - 14 ID=4.8A
Qgs Gate-to-Source Charge - - 3.0 nC VDs=160V
the Gate-to-Drain ("Miller'') Charge - - 7.9 Ves=10V See Fig. 6 and 13 ©
tum) Tum-On Delay Time - 7.2 - VDD=100V
tr Rise Time - 22 - n s ltr=4.8A
fawn) Tum-Off Delay Time - 19 - Re=189
tt Fall Time - 13 - RD=19§2 See Figure 10 ti)
Lo Internal Drain Inductance - 4.0 - , $122,183 Jie. ') D
nH from package GAE
Ls Internal Source Inductance - 6.0 - an center 6f E
die contact s
CL, Input Capacitance - 260 - I/tas-HN
Coss Output Capacitance - 100 - pF Vos-- 25V
Crss Reverse Transfer Capacitance - 30 - f=.1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 0.80 MOSEET symbol D
(Body Diode) A showing the 1'1:
ISM Pulsed Source Current - - 6 4 integral reverse tiii-il-j)
(Body Diode) C) . p-n junction diode. s
I/st Diode Fomard VolMps - - 1.8 V Tr=25oC, ls=0.80A, VGs=0V ©
trr Reverse Recovery Time 7 - 150 300 ns TJ=25°C, 1F=4.8A
er Reverse Recovery Charge . - 0.91 1.8 wc di/cit---100A/ps ©
ton Forward Tum-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lo)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDo=50V, starting TJ=25°C, L=152mH
Re=25§2, lAs=1.6A (See Figure 12)
TJS150°C
© Isoss.2A, di/dts95A/ws, VDDSV(BR)DSS.
co Pulse width 3 300 ps; duty cycle 52%.
