IRFBF30 ,900V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
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IRFBG20 ,1000V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
RRectifier
PD-9.604A
IRFBG20
HEXFETO Power MOSFET
q Dynamic dv/dt Rati ..
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thermal resistance and ..
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IRFBF30
900V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
jtq71i' Rectifier
PD-9.616A
IRFBFBO
HEXFET® Power MOSFET
0 Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
0 FastSwitching
o Ease of Paralleling
Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
VDSS = 900V
RDS(on) = 3.7g
'0 = 3.6A
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all Commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-22OAB
Absolute Maximum Ratings
Parameter Max. Units
19 © Tc = 25°C Continuous Drain Current, Ves © 10 V 3.6
lo @ To = 100°C Continuous Drain Current, VGs @ 10 V 2.3 A
[DM Pulsed Drain Current co 14 V
Po @ To = 25°C Power Dissipation 125 W
Linear Derating Factor 1.0 WPC
VGS Gate-to-Source Voltage ur20 V
EAS Single Pulse Avalanche Energy © 250 mJ
IAR Avalanche Current (i) 3.6 A
EAR Repetitive Avalanche Energy (i) 13 mJ
dv/dt Peak Diode Recovery dv/dt © 1.5 V/ns
To Operating Junction and .4i5 to +150
TSTG Storage Temperature Range oc)
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
(Mounting Torque, 6-32 or M3 screw 10 lbf-in (1.1 N.m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rex: Junction-to-Case - - 1 .O
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - °C/W
RNA Junction-to-Ambient - - 62
IRFBFSO
Electrical Characteristics tii) Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(anss Drain-to-Source Breakdown Voltage 900 - - V I/ss-HN, lo: 250gA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient -.-. 1.1 - VPC Reference to 25°C, In: 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 3.7 Q Ves=10V, lrr=2.2A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos=VGs, ID: 250M
gis Forward Transconductance 2.3 - -- S Vns=1OOV, ID=2.2A G)
. - - 100 Vns=900V, Ves=0V
loss Drain-to-Source Leakage Current - - 500 WA VDs=720V, Vss=OV, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A VGs=20V
Gate-to-Source Reverse Leakage - - -1OO VGs=-20V
Qg Total Gate Charge - - 78 ln=3.6A
Qgs Gate-to-Source Charge - - 10 nC Vos=360V
di Gate-to-Drain ("Miller") Charge - - 42 VGs=10V See Fig. 6 and 13 ©
tam) Turn-On Delay Time - - 14 - VDD=450V
tr Rise Time - 25 - n s lry-73.6A
tam“) Turn-Off Delay Time - 90 _ - Re=129
tr Fall Time - 30 - RD=12OQ See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - t111etJ.lii,1/,i.') D
nH from package siijij)
Ls Internal Source Inductance - 7.5 - and center 6f
die contact s
Ciss Input Capacitance -... 1200 .- Ves=0V
Cass Output Capacitance - 320 - PF Vos=25V
Crss Reverse Transfer Capacitance - 200 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 3 6 MOSFET symbol D
(Body Diode) ' A showing the 1.221:
ISM Pulsed Source Current 7 _ - 14 integral reverse G (n-]
(Body Diode) G) p-n junction diode. s
Vso Diode Forward Voltage - - 1.8 V TJ=25°C, is=3.6A, Vtas---0V ©
tn Reverse Recovery Time - 430 650 ns TJ=25°C, IF=3.6A
er Reverse Recovery Charge - 1.4 2.1 p0 di/dt=100A/rus C4)
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by LsyrLo)
Notes:
oo Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
Q) VDD=50V, starting TJ=25°C, L=36mH
Re=259, |As=3.6A (See Figure 12)
© ISDSBSA, di/de70A/ps, VDDSBOO ,
TJS150°C
(ig Pulse width S 300 us; duty cycle 32%.
