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IRFBF20 |IRFBF20VISHAY N/a949avai900V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
IRFBF20. |IRFBF20IRN/a65avai900V Single N-Channel HEXFET Power MOSFET in a TO-220AB package


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IRFBF20 -IRFBF20.
900V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD-9.607A
International
192R Rectifier _ _ IRF B F20
HEXFET® Power MOSFET
o Dynamic dv/dt Rating
tt Repetitive Avalanche Rated D -
o Fast Switching VDSS - 900V
0 Ease of Paralleling
lt Simple Drive Requirements _ C LA RDS(on) = 8.09
S ID---1.7A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commerciaI-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
1 Parameter Max. Units
lo @ Tc = 25°C Continuous Drain Current, Vas a 10 V 1.7
In @ Tc = 100°C Continuous Drain Current, Vas © 10 V' 1.1 A
IDM Pulsed Drain Current C) . 6.8
Po Q) To = 25°C Power Dissipation C 54 W
Linear Derating Factor 0.43 j WPC
Vas Gate..toisouree Voltage :20 V
EAS Single Pulse Avalanche Energy © 180 _ mJ
Un Avalanche Current (i) 1.7 A
EAR Repetitive Avalanche Energy co 5.4 md
dv/dt Peak Diode Recovery dv/dt Ci) 1.5 V/ns
To Operating Junction and -55 to +150
TSTG Storage Temperature Range =
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1 Nun)
Thermal Resistance
Parameter Min. Typ. Max. Units
Halo Junction-to-Case - - 2.3
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - °C/W
Ram Junction-to-Ambient - - 62
IRFBF20
Electrical Characteristics @ TU = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BRJDSS Drain-to-Source Breakdown Voltage 900 - - V VGs=OV, ID: 2500A
AV(BR]DSS/ATJ Breakdown Voltage Temp. Coefficient - 1.1 - VPC Reference to 25°C, In: 1mA
RDS(cn) Static Drain-to-Source On-Resistance - - 8.0 n Vss=10V, |D=1.0A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos=VGs, lo: 25thtA
gfs Forward Transconductance 0.60 - - S Vos=100V, lo=1.0A C4)
loss Drain-to-Source Leakage Current I I ;23 WA 213:1ng x::2x TJ=125°C
lass Gate-to-Source Forward Leakage - - 100 n A VGs=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
th Total Gate Charge - - 38 |D=1.7A
Qgs Gate-to-Source Charge - - 4.7 " Vos=360V
gm Gate-to-Drain ("Miller") Charge - - 21 Vss=10V See Fig. 6 and 13 (ii)
tum Turn-On Delay Time - 8.0 - Voo=450V
t, Rise Time - 21 - ns kr=1.7A
tum") Tu rn-Off Delay Time - 56 - RG=18§2
t: Fall Time - 32 - Ro=280£2 See Figure 10 @
Lo Internal Drain inductance - 4.5 - , $1111 Jie. ') D
nH from package GEE
Ls Internal Source Inductance - 7.5 - Ind center Of
die contact s
Ciss Input Capacitance - 490 .-.. Vss=OV
Coss Output Capacitance - 55 - pF Vos=25V
Crss Reverse Transfer Capacitance - 18 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 1 7 MOSFET symbol D
(Body Diode) . A showing the 'sf)
ISM Pulsed Source Current _ - 6.8 integral reverse iii-ii
(Body Diode) co p-n junction diode. s
Vso Diode Forward Voltage - - 1.5 V TJ=25°C, Is=1.7A, VGs=OV ©
tn Reverse Recovery Time - 350 530 ns TJ=25°C, IF=1.7A
er Reverse Recovery Charge - 0.85 1.3 ptt2 di/dt=100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (tum-on is dominated by Ls+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
ll) VDD=5OV, starting TJ=25°C, L=117mH
RG=25Q, lAs=1.7A (See Figure 12)
© Isos1.7A, di/dtS7OA/ps, Vooseoo ,
TJS150°C
CO Pulse width S 300 us; duty cycle g.2%.
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