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IRFB9N30AIRN/a80200avai300V Single N-Channel HEXFET Power MOSFET in a TO-220AB package


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IRFB9N30A
300V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
. PD- 91832
International
TOR Rectifier IRzl39N30A
HEXFET® Power MOSFET
. Dynamic dv/dt Rating D
o Repetitive Avalanche Rated VDSS = 300V
0 Fast Switching
. Ease of Paraleling -
0 Simple Drive Requirements G FN RDS(on) - 0.45n
s ID = 9.3A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commerciaI-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGs @ 10V 9.3
ID @ Tc = 100''C Continuous Drain Current, VGS @ 10V 5.9 A
IDM Pulsed Drain Current © 37
Pro @Tc = 25°C Power Dissipation 96 W
Linear Derating Factor 0.77 W/°C
VGS Gate-to-Source Voltage , 30 V
EAS Single Pulse Avalanche Energy© 160 mJ
IAR Avalanche Current© 9.3 A
EAR Repetitive Avalanche Energyc0 9.6 mJ
dv/dt Peak Diode Recovery dv/dt © 4.6 V/ns
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range "C
Soldering Temperature, tor 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Reoc Junction-to-Case - 1 .3
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
ReJA Junction-to-Ambient - 62
1
10/7/98
IRFB9N30A
International
TOR Rectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 300 - - V VGS = 0V, lo = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.38 - V/°C Reference to 25''C, lo = 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.45 n VGS = 10V, ID = 5.6A (f)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Ws = Kas, ID = 250pA
9ts Forward Transconductance 6.6 - - S I/os = 50V, ID = 5.6A
loss Drain-to-Source Leakage Current - - 25 pA l/os = 300V, I/cs = 0V
- - 250 Vos = 240V, VGS = ov, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 30V
Gate-to-Source Reverse Leakage - - -100 l/ss = -30V
% Total Gate Charge - - 33 ID = 9.3A
Qgs Gate-to-Source Charge - - 6.9 nC N/os = 240V
di Gate-to-Drain ("Miller") Charge - - 12 Vcs = 10V, See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 10 - VDD = 150V
tr Rise Time - 25 - ns ID = 9.3A
tum) Turn-Off Delay Time - 35 - Rs = 12n
k Fall Time - 29 - R9 = 16Q,See Fig. 10 ©
. Between lead, D
Lo Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) f )
Ls Intemal Source Inductance - 7.5 - from package . G _
and center of die contact s
Ciss Input Capacitance - 920 - VGs = 0V
CDSS Output Capacitance - 160 - Vros = 25V
Crss Reverse Transfer Capacitance - 8.7 - pF f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 1200 - I/cs = 0V, VDs = 1.0V, f = 1.0MHz
Coss Output Capacitance - 52 - VGs = 0V, 1/ros = 240V, f = 1.0MHz
Coss eff. Effective Output Capacitance s - 102 - VGS = 0V, Vos = 0V to 240V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 9.3 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) (D - - 37 p-n junction diode. s
I/sro Diode Forward Voltage - - 1.5 V TJ = 25°C, Is = 9.3A, VCs = 0V ©
tn Reverse Recovery Time - 280 420 ns To = 25°C, IF = 9.3A
Qrr Reverse RecoveryCharge - 1.5 2.3 pC di/dt = 100Alps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting T J = 25°C, L = 3.7mH
Rs = 259, lAs = 9.3A. (See Figure 12)
© ISD S 9.3A, di/dt S 270/Ups, VDD S V(BR)oss,
TJs150°c
© Pulse width 5 300ps; duty cycle s: 2%.
(S) Cass eff. is a foted capacitance that gives the same charging time
as Coss while VDs is rising from 0 to 80% VDss

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