IRFB52N15DPBF ,150V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters150V 0.032Ω 60ABenefits Low Gate ..
IRFB59N10D ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 93890IRFB59N10D IRFS59N10DSMPS MOSFET IRFSL59N10D®HEXFET Power MOSFET
IRFB59N10DPBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplications High frequency DC-DC convertersV R max IDSS DS(on) D UPS / Motor Control Inverters 1 ..
IRFB61N15D ,150V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters150V 0.032Ω 60Al Motor Controll U ..
IRFB61N15DPBF ,150V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters150V 0.032Ω 60A Motor Control U ..
IRFB7430 ,40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB packageapplications max. 1.3mΩGResonant mode power suppliesI 409A
IRFB52N15D -IRFB52N15DPBF-IRFS52N15D
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD - 94357A
1nterryohtyol IRFB52N15D
TOR Rectifier SMPS MOSFET IRFS52N15D
|RFSL52N15D
HEXFET@ Power MOSFET
Applications
V R max I
. High frequency DC-DC converters DSS DS(on) D
150V 0.0329 60A
Benefits
o Low Gate-to-Drain Charge to Reduce
Switching Losses
o Fully Characterized Capacitancelncluding ," ttiii,,)),
2ii), T
Effective Coss to Simplify Design, (See V Cc: "tli-l-C'), s,
App. Note AN1001) 'i:(y _ {1
o Fully Characterized Avalanche Voltage
and Current TO-220AB D2Pak TO-262
IRFB52N15D IRFS52N15D |RFSL52N15D
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 60
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 43 A
IDM Pulsed Drain Current (D 240
PD @TA = 25°C Power Dissipation © 3.8 W
PD @Tc = 25°C Power Dissipation 320
Linear Derating Factor 2.1 W/°C
Vss Gate-to-Source Voltage , 30 V
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torqe, 6-32 or M3 screw© 10 Ibf-in (1.1Nom)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.47
Recs Case-to-Sink, Flat, Greased Surface © 0.50 - "CIW
ReJA Junction-to-Ambient© - 62
ReJA Junction-to-Ambient® - 4O
Notes (D through (D are on page 11
1
06/25/02
lRFB/lRFS/lRFSL52N15D
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 - - V VGS = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefrcient - 0.16 - V/°C Reference to 25°C, ID = 1mA
Rosom Static Drain-to-Source On-Resistance - - 0.032 n Vcs = 10V, ID = 36A (D
VGS(th) Gate Threshold Voltage 3.0 - 5.0 V I/os = V95, ID = 250pA
IDSS Drain-to-Source Leakage Current - - 25 pA Vos = 150V, VGS = 0V
- - 250 VDs = 120V, VGS = 0V, TJ = 150°C
l Gate-to-Source Forward Leakage - - 100 n A VGs = 30V
GSS Gate-to-Source Reverse Leakage - - -100 I/ss = -30V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
9ts Forward Transconductance 19 - - S Vros = 50V, ID = 36A
% Total Gate Charge - 60 89 ID = 36A
Q95 Gate-to-Source Charge - 18 27 nC I/rss = 75V
di Gate-to-Drain ("Miller") Charge - 28 42 Was = 10V, Ci)
tdwn) Turn-On Delay Time - 16 - VDD = 75V
t, Rise Time - 47 - ns ID = 36A
tum) Turn-Off Delay Time - 28 - Rs = 2.59
tf Fall Time - 25 - VGs = 10V (D
Ciss Input Capacitance - 2770 - VGS = 0V
Cass Output Capacitance - 590 - VDs = 25V
Crss Reverse Transfer Capacitance - 110 - pF f = 1.0MHz
Coss Output Capacitance - 3940 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 260 - VGS = 0V, Vos = 120V, f = 1.0MHz
COSS eff. Effective Output Capacitance - 550 - l/ss = 0V, Ws = 0V to 120V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy©© - 470 mJ
IAR Avalanche Current0) - 36 A
EAR Repetitive Avalanche Energy0) - 32 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 60 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 240 integral reverse G
(Body Diode) CDO) p-n junction diode. s
VSD Diode Forward Voltage - - 1.5 V To = 25°C, ls = 36A, l/ss = 0V co
tn Reverse Recovery Time - 140 210 nS To = 25°C, IF = 36A
er Reverse RecoveryCharge - 780 1170 nC di/dt = 100Alps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
2
