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IRFB4710N/a1avai100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
IRFB4710. |IRFB4710IRN/a117avai100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
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IRFB4710-IRFB4710.-IRFB4710PBF-IRFS4710-IRFSL4710
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
Applications
0 High frequency DC-DC converters
. Motor Control
o Uninterrutible Power Supplies
Benefits
o Low Gate-to-Drain Charge to Reduce
Switching Losses
o Fully Characterized Capacitance Including
Effective Coss to Simplify Design, (See
App. Note AN1001)
PD- 94080
IRFB4710
IRFS4710
IRFSL4710
HEXFET® Power MOSFET
RDS(on) max ID
0.0149 75A
. TO-220AB D2Pak TO-262
o Fully Characterized Avalanche Voltage IRFB4710 IRFS4710 IRFSL4710
and Current
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 75
ID @ To = 100°C Continuous Drain Current, VGS @ 10V 53 A
IDM Pulsed Drain Current OD 300
Po @TA = 25''C Power Dissipation © 3.8 W
Pro @Tc = 25°C Power Dissipation 200
Linear Derating Factor 1.4 W/°C
VGS Gate-to-Source Voltage i 20 V
dv/dt Peak Diode Recovery dv/dt © 8.2 V/ns
T J Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, tor 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw© 1O lbf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rauc Junction-to-Case - 0.74
Recs Case-to-Sink, Flat, Greased Surface © 0.50 - °C/W
ReJA Junction-to-Ambient© - 62
RQJA Junction-to-Ambient® - 40
Notes C) through © are on page 11
1

3/16/01
lRFB/lRFS/lRFL4710
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V VGS = 0V, lo = 250pA
AVRosmn) Static Drain-to-Source On-Resistance 0.011 0.014 n VGs = 10V, ID = 45A ©
VGS(th) Gate Threshold Voltage 3.5 - 5.5 V Vos = I/cs, ID = 250pA
loss Drain-to-Source Leakage Current - - 1.0 pA Vros = 95V, VGS = 0V
- - 250 Vos = 80V, VGS = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 35 - - S Vros = 50V, ID = 45A
% Total Gate Charge - 110 170 ID = 45A
Qgs Gate-to-Source Charge - 43 - nC Vos = 50V
di Gate-to-Drain ("Miller") Charge - 40 - VGS = 10V,
tmn) Turn-On Delay Time - 35 - VOD = 50V
t, Rise Time - 130 - ns ID = 45A
tam) Turn-Off Delay Time - 41 - Rs = 4.59
tf Fall Time - 38 - VGS = 10V ©
Ciss Input Capacitance - 6160 - VGs = 0V
Cass Output Capacitance - 440 - Vos = 25V
Crss Reverse Transfer Capacitance - 250 - pF f = 1.0MHz
Coss Output Capacitance - 1580 - N/ss = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 280 - VGS = 0V, Vros = 80V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 430 - VGs = 0V, I/rss = 0V to 80V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 190 m1
IAR Avalanche CurrentC0 - 45 A
EAR Repetitive Avalanche Energy© - 20 m]
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 75 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 300 integral reverse G
(Body Diode) COO) p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 45A, VGS = 0V 69
trr Reverse Recovery Time - 74 110 ns TI, = 25°C, IF = 45A
Qrr Reverse RecoveryCharge - 180 260 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
2

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