IC Phoenix
 
Home ›  II30 > IRFB4410ZGPBF,100V Single N-Channel HEXFET Power MOSFET in a Lead Free Halogen Free TO-220AB package
IRFB4410ZGPBF Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
IRFB4410ZGPBFIRN/a100avai100V Single N-Channel HEXFET Power MOSFET in a Lead Free Halogen Free TO-220AB package


IRFB4410ZGPBF ,100V Single N-Channel HEXFET Power MOSFET in a Lead Free Halogen Free TO-220AB packageApplicationsV100VDSSHigh Efficiency Synchronous Rectification in SMPSR typ.7.2mUninterruptibl ..
IRFB4410ZPBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsDV 100VHigh Efficiency Synchronous Rectification in SMPSDSSUninterruptible Power Su ..
IRFB4610 ,IRFB4610 IRFS4610 IRFSL4610IRFB4610IRFS4610IRFSL4610
IRFB4610PBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsHEXFET Power MOSFETHigh Efficiency Synchronous Rectification in SMPSUninterruptib ..
IRFB4710 ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD- 94080IRFB4710 IRFS4710 IRFSL4710®HEXFET Power MOSFET
IRFB4710. ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD- 94080IRFB4710 IRFS4710 IRFSL4710®HEXFET Power MOSFET
ISL6306IRZ , 4-Phase PWM Controller with 8-Bit DAC Code Capable of Precision rDS ON or DCR Differential Current Sensing
ISL6307 ,6-Phase PWM Controller with 8 Bit VID Code Capable of Precision RDS(ON) or DCR Differential Currentfeatures a high - Dynamic VID™ Technologybandwidth control loop and ripple frequencies up to 6MHz t ..
ISL6307BCRZ , 6-Phase VR11 PWM Controller with 8-Bit VID Code Capable of Precision RDS(ON) or DCR Differential Current Sensing for Applications
ISL6308CRZ , Three-Phase Buck PWM Controller with High Current Integrated MOSFET Drivers
ISL6308IRZ , Three-Phase Buck PWM Controller with High Current Integrated MOSFET Drivers
ISL6310IRZ , Two-Phase Buck PWM Controller with High Current Integrated MOSFET Drivers


IRFB4410ZGPBF
100V Single N-Channel HEXFET Power MOSFET in a Lead Free Halogen Free TO-220AB package
International
Tait Rectifier
PD - 96213
IRFl34410ZGPbF
HEXFETID Power MOSFET
Applications D
o High Efficiency Synchronous Rectification in SMPS Vnss 100V
q Uninterruptible Power Supply Roam) typ. 7.2mQ
o High Speed Power Switching man 9.0mo
o Hard Switched and High Frequency Circuits
s ID (Silicon Lim'ted) 97A
Benefits
q Improved Gate, Avalanche and Dynamic dV/dt f,
Ruggedness iijjiiich,
q Fully Characterized Capacitance and Avalanche ‘\ _ ' S
SOA ic)
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free TO420AB
IRFB4410ZGPbF
o Halogen-Free
Gate Drain Source
Absolute Maximum Ratings
Symbol Parameter Max. Units
ID © To = 25°C Continuous Drain Current, Vas @ 10V (Silicon Limited) 97
ID @ TC = 100°C Continuous Drain Current, VGS © 10V (Silicon Limited) 69 A
bs, Pulsed Drain Current C) 390
PD @Tc = 25°C Maximum Power Dissipation 230 W
Linear Derating Factor 1.5 W/°C
Vas Gate-to-Source Voltage i 20 V
dv/dt Peak Diode Recovery (3 16 V/ns
TJ Operating Junction and -55 to + 175
Tsm Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lbf-in (1.1N-m)
Avalanche Characteristics
EAS (Thermallylimited) Single Pulse Avalanche Energy © 242 mJ
IAR Avalanche Current OD See Fig. 14, 15, 22a, 22b, A
EAR Repetitive Avalanche Energy C) mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
Raw, Junction-to-Case © - 0.65
Recs Case-to-Sink, Flat Greased Surface , TO-220 0.50 - °C/W
RBJA Junction-to-Ambient, TO-220 - 62
1
01/06/09

|RFB441OZGPbF
International
TOR Rectifier
Static @ To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V l/as = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.12 - V/°C Reference to 25°C, ID = 5mA©
RDs(on) Static Drain-to-Source On-Resistance - 7.2 9.0 m9 Vss = 10V, ID = 58A Ci)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = Vas, ID = 150pA
IDSS Drain-to-Source Leakage Current - - 20 pA VDs = 100V, Vas = 0V
- - 250 vDS = 80V, Vss = ov, TJ = 125°C
IGSS Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 l/as = -20V
Rs Internal Gate Resistance - 0.70 - Q
Dynamic © T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 140 - - S Vos = 10V, ID = 58A
a, Total Gate Charge - 83 120 nC ID = 58A
Qgs Gate-to-Source Charge - 19 - VDs =50V
di Gate-to-Drain ("Miller") Charge - 27 Vss = 10V Ci)
stnc Total Gate Charge Sync. (Qg - di) - 56 - ID = 58 A, VDs =0V, Vas = 10V Ci)
tdion) Turn-On Delay Time - 16 - ns VDD = 65V
t, Rise Time - 52 - ID = 58A
td(off) Turn-Off Delay Time - 43 - Rs =2.7Q
t; Fall Time - 57 - l/as = 10V GD
Ciss Input Capacitance - 4820 - pF I/ss = 0V
Coss Output Capacitance - 340 - Vos = 50V
Crss Reverse Transfer Capacitance - 170 - f = 1.0MHz, See Fig.5
Coss eff. (ER) Effective Output Capacitance (Energy Related) © - 420 - Vas = 0V, VDS = 0V to 80V 6), See Fig.11
Coss eff. (TR) Effective Output Capacitance (Time Related)© - 690 - I/ss = 0V, VDs = 0V to 80V (9
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 97 A MOSFET symbol D
(Body Diode) showing the
Iss, Pulsed Source Current - - 390 A integral reverse G
(Body Diode) OD p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, ls = 58A, Vas = 0V co
trr Reverse Recovery Time - 38 57 ns TJ = 25°C VR = 85V,
- 46 69 TJ = 125°C IF = 58A
Qrr Reverse Recovery Charge - 53 80 nC T J = 25°C di/dt = 100A/ps (ii)
- 82 120 T J = 125°C
|an Reverse Recovery Current - 2.5 - A T J = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
OD Repetitive rating; pulse width limited by max. junction S Cass eff. (TR) is a fixed capacitance that gives the same charging time
temperature. as COSS while Vos is rising from 0 to 80% Voss.
© Limited by TJmax, starting TJ = 25°C, L = 0.143mH
Re = 259, IAS = 58A, VGS =10V. Part not recommended for use
above this value.
© ISD I 58A, di/dt s: 610A/ps, VDD s V(BR)DSS, T, s: 175°C.
(9 Pulse width 5 400ps; duty cycle S 2%.

© Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while Vos is rising from 0 to 80% Voss.
co Re is measured at Tu approximately 90°C.

ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED