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IRFB4321-IRFB4321PBF
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
PD - 971038
IFlFB4321PbF
Applications HEXFET® Power MOSFET
0 Motion Control Applications
q ll-Jligh EfficiegTy s':,'),:":,'",,':,',),)'', Rectification in SMPS Voss 150V
0 ninterru ti e ower u
0 Hard Switlithed and High Efeéuency Circuits RDS(on) typ. 12mg
. max. 15mta
Benefits
0 Low RDSON Reduces Losses Ir, 85A
0 Low Gate Charge Improves the Switching
Performance D
0 Improved Diode Recovery Improves Switching &
EMI Performance _
o 30V Gate Voltage Rating Improves Robustness _
. Fully Characterized Avalanche SOA G A Ja s
TO-220AB
Gate Drain Source
Absolute Maximum Ratings
Symbol Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ 10V 85 co A
ID @ To = 100°C Continuous Drain Current, Vai; @ 10V 60
IDM Pulsed Drain Current © 330
PD @Tc = 25°C Maximum Power Dissipation 350 W
Linear Derating Factor 2.3 w/oc
Vss Gate-to-Source Voltage t30 V
EAS(ThermaWmited) Single Pulse Avalanche Energy © 120 mJ
Tu Operating Junction and -55 to + 175 °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10Ib-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rea; Junction-to-Case Cs) - 0.43
R903 Case-to-Sink, Flat, Greased Surface 0.50 - °CNV
RNA Junction-to-Ambient © - 62
1
12/9/10
International
IRFB4321PbF
TOR Rectifier
Static Iii) To = 25°C (unless otherwise specified)
Symbol Parameter Min Typ. Max. Units Conditions
V(Bmss Drain-to-Source Breakdown Voltage 150 - - V Vss = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 150 - mV/°C Reference to 25°C, ID = 1mA©
Roam) Static Drain-to-Source On-Resistance - 12 15 mg) Vas = 10V, ID = 33A GD
Vegan) Gate Threshold Voltage 3.0 - 5.0 V VDS = Vas, ID = 250pA
loss Drain-to-Source Leakage Current - 20 pA Vos = 150V, l/ss = 0V
- - 1.0 mA Vos = 150V, N/es = 0V, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
Rem) Internal Gate Resistance - 0.8 - Q
Dynamic © T, = 25''C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 130 - - S Vos = 25V, ID = 50A
Qg Total Gate Charge - 71 110 nC ID = 50A
Qgs Gate-to-Source Charge - 24 - Vos = 75V
di Gate-to-Drain ("Miller") Charge - 21 - Vas = 10V ©
tum) Turn-On Delay Time - 18 - ns VDD = 98V
tr Rise Time - 60 - ID = 50A
tom Turn-Off Delay Time - 25 - RG = 2.59
t, Fall Time - 35 - Vas = 10V ©
Ciss Input Capacitance - 4460 - pF Vas = 0V
Cass Output Capacitance - 390 - Vos = 50V
Crss Reverse Transfer Capacitance - 82 - f = 1.0MHz
Diode Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
Is Continuous Source Current - - 8503 A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 330 A integral reverse G
(Body Diode) © p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 50A, l/as = OV ©
trr Reverse Recovery Time - 89 130 ns ID = 50A
a,, Reverse Recovery Charge - 300 450 nC VR = 128V,
IRRM Reverse Recovery Current - 6.5 - A di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
G) Pulse width S 400ps; duty cycle f 2%.
S Re is measured at To approximately 90''C
OD Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 75A
© Repetitive rating; pulse width limited by max. junction
temperature.
© Limited by TJmax, starting To = 25°C, L = 0.095mH
Rs = 259, IAS = 50A, Vas =10V. Part not recommended for use
above this value.
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