IRFB3006PBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsDV60VDSS High Efficiency Synchronous RectificationR typ.2.1m
IRFB3006PBF
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
Tt,t,2iR, Rectifier
IRFB€3®®©PbF
Applications
HEXFET© Power MOSFET
o High Efficiency Synchronous Rectification Voss 60V
in SMPS RDS(on) typ. 2Amf2
o Uninterruptible Power Supply max. 2.5mf2
q Hi h S eed Power Switchin
o Hagrd SSvitched and High Fre%uency Circuits G ID (Silicon Limited) 270A co
Benefits ID (Package Limited) 195A
0 Improved Gate, Avalanche and Dynamic
dV/dt Ruggedness
. Fully Characterized Capacitance and
Avalanche SOA
Enhanced body diode dV/dt and dl/dt Capability --+ s
o Lead-Free “G D
o RoHS Compliant, Halogen-Free
TO-220AB
Gate Drain Source
Base Part Number Package Type Standard Pack Orderable Part Number
Form auantity
IRFB3006PbF TO-220 Tube 50 IRFB3006PbF
Absolute Maximum Ratings
Symbol Parameter Max. Units
lr, © To = 25°C Continuous Drain Current, Vss @ 10V (Silicon Limited) 2700D
ln @ To = 100°C Continuous Drain Current, Vss @ 10V (Silicon Limited) 190 C) A
ID @ To = 25°C Continuous Drain Current, Ves @ 10V (Wire Bond Limited) 195
bs, Pulsed Drain Current Q) 1080
PD @Tc = 25°C Maximum Power Dissipation 375 W
Linear Derating Factor 2.5 WPC
I/ss Gate-to-Source Voltage i 20 V
dv/dt Peak Diode Recovery © IO V/ns
T, Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lb-in (1.1N-m)
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy (3 320 mJ
IAR Avalanche Current © See Fig. 14, 15, 22a, 22b, A
EAR Repetitive Avalanche Energy © mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
Ras Junction-to-Case © - 0.4
Recs Case-to-Sink, Flat Greased Surface 0.50 - °C/W
RNA Junction-to-Ambient G)(9 - 62
fl © 2014 International Rectifier Submit Datasheet Feedback April 23, 2014
ItCi,iR, IRFB3006PbF
Static @ T, = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V Vos = 0V, ID = 250pA
AVom)oss/ATJ Breakdown Voltage Temp. Coefficient - 0.07 - V/°C Reference to 25°C, ID = 5mA©
RDs(on, Static Drain-to-Source On-Resistance - 2.1 2.5 mn Vas = 10V, ID = 170A S
VGSW Gate Threshold Voltage 2.0 - 4.0 V Vos = Vss, ID = 250PA
loss Drain-to-Source Leakage Current - - 20 pA Vos = 60V, l/tss = 0V
- - 250 VDS = 60V, Vss = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
Ra Internal Gate Resistance - 2.0 - (2
Dynamic © To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 280 - - S VDS = 25V, ID = 170A
q, Total Gate Charge - 200 300 nC ID = 170A
Qgs Gate-to-Source Charge - 37 - Vos =30V
di Gate-to-Drain ("Miller") Charge - 60 Vas = 10V ©
stnc Total Gate Charge Sync. (Q, - di) - 140 - ID = 170A, Vos =OV, Vss = 10V
td(on) Turn-On Delay Time - 16 - ns VDD = 39V
t, Rise Time - 182 - ID = 170A
tom Turn-Off Delay Time - 118 - Fla = 2.79
t, Fall Time - 189 - Vss = 10V ©
Ciss Input Capacitance - 8970 - pF Vas = 0V
Coss Output Capacitance - 1020 - l/ns = 50V
Crss Reverse Transfer Capacitance - 534 - f = 1.0 MHz, See Fig. 5
Coss eff. (ER) Effective Output Capacitance (Energy Related) - 1480 - Vas = 0V, Vos = 0V to 48V C), See Fig. 11
Coss eff. (TR) Effective Output Capacitance (T ime Related)© - 1920 - Ves = 0V, Vos = 0V to 48V ©
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 2700) A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 1080 A integral reverse G
(Body Diode) © p-n junction diode. S
Va, Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 170A, l/ss = 0V G)
trr Reverse Recovery Time - 44 - ns TJ = 25°C VR = 51V,
- 48 - To-- 125°C |F=17OA
Q,, Reverse Recovery Charge - 63 - nC TJ = 25°C di/dt = 100A/ps ©
- 77 - To = 125°C
IRRM Reverse Recovery Current - 2.4 - A T J = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.(RefertoAN-1140)
© Repetitive rating; pulse width limited by max. junction
temperature. Coss while VDS is rising from O to 80% Voss.
© Limited by Tumax, starting TJ = 25°C, L = 0.022mH When mounted on 1" square PCB (FR-4 or G-1 0 Material). For recommended
Rs = 259, lAs = 170A, Vss =10V. Part not recommended for use footprintand soldering techniques referto application note #AN-994.
above this value . Re is measured at Tu approximately 90°C.
ISD f 170A, di/dt f 1360A/ps, VDD S V(BR)DSS! TJ S 175°C.
Pulse width s: 400ps; duty cycle s: 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDs is rising from O to 80% Voss.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Q 6') @6369
iil © 2014 International Rectifier Submit Datasheet Feedback April 23, 2014
