IRFB260N ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters200V 0.040Ω 56ABenefits Low Gate ..
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IRFB3006PBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsDV60VDSS High Efficiency Synchronous RectificationR typ.2.1m
IRFB260N
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
Applications
. High frequency DC-DC converters
Benefits
. Low Gate-to-Drain Charge to Reduce Switching Losses
. Fully Characterized Capacitance Including Effective Coss to
Simplify Design, (See App. Note AN1001)
SMPS MOSFET
PD - 94270
IRFB260N
H EXFETO Power MOSFET
Voss RDS(on) max ID
200V 0.0409 56A
. Fully Characterized Avalanche Voltage and Current
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 56
ID @ To = 100°C Continuous Drain Current, VGS @ 10V 40 A
IDM Pulsed Drain Current (D 220
Pro @Tc = 25°C Power Dissipation 380 W
Linear Derating Factor 2.5 W/°C
VGS Gate-to-Source Voltage i 20 V
dv/dt Peak Diode Recovery dv/dt s 10 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.40
Recs Case-to-Sink, Flat, Greased Surface 0.50 - "C/w
ReJA Junction-to-Ambient - 62
Notes C) through s are on page 8
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8/29/01
IRFB260N
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V N/ss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.26 - V/''C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 0.040 Q VGS = 10V, ID = 34A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 pA Vos = 200V, VGS = 0V
- - 250 Vos = 160V, l/ss = 0V, To = 150°C
I Gate-to-Source Forward Leakage - - 100 n A N/ss = 20V
GSS Gate-to-Source Reverse Leakage - - -100 VGs = -20V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Ts Forward Transconductance 29 - - S VDs = 50V, ID = 34A
Qg Total Gate Charge - 150 220 ID = 34A
Qgs Gate-to-Source Charge - 24 37 n0 Vros = 160V
di Gate-to-Drain ("Miller") Charge - 67 100 VGS = 10V Cr)
1d(on) Turn-On Delay Time .-..-.- 17 .-..-.- VDD = 100V
tr Rise Time - 64 - ns ID = 34A
taott) Turn-Off Delay Time - 52 - Rs = 1.89
" Fall Time - 50 - VGS = 10V ©
Ciss Input Capacitance - 4220 - VGS = 0V
Coss Output Capacitance - 580 - Vos = 25V
Crss Reverse Transfer Capacitance - 140 - pF f = 1.0MHz
Coss Output Capacitance - 5080 - VGS = ov, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 230 - N/ss = 0V, Vos = 160V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 500 - Vss = 0V, Vros = 0V to 160V ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 450 m]
IAR Avalanche CurrentC0 - 34 A
EAR Repetitive Avalanche Energy© - 38 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 56 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 220 integral reverse G
(Body Diode) C) p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 34A, VGs = 0V ©
trr Reverse Recovery Time - 240 360 ns Tu = 25°C, IF = 34A
Qrr Reverse RecoveryCharge - 2.1 3.2 pC di/dt = 100A/ps ©
ts, Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
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