IRFB23N20DPBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters200V 0.10Ω 24A Lead-FreeBenefits ..
IRFB260N ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters200V 0.040Ω 56ABenefits Low Gate ..
IRFB260NPBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters200V 0.040Ω 56A Lead-FreeBenefit ..
IRFB3006PBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsDV60VDSS High Efficiency Synchronous RectificationR typ.2.1m
IRFB23N20DPBF
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD - 95536
International IRFB23N20DPbF
TOR Rectifier SMPS MOSFET lRFS23N20DPbF
lRFSL23N20DPbF
HEXFET® Power MOSFET
Applications V R max I
0 High frequency DC-DC converters 203:3 D3303; 24':
o Lead-Free .
Benefits
q Low Gate-to-Drain Charge to Reduce
Switching Losses
q Fully Characterized Capacitance Including " (itiiiir r,-,itiai,i,iit 'gb
Effective Coss to Simplify Design, (See "ttsri-l "''x')",fi'i''a','t'ii' \f\...
App. Note AN1001) ll N, ', .'
o Fully Characterized Avalanche Voltage
and Current
TO-220AB D2Pak TO-262
IRFB23N2OD IRFS23N20D IRFSL23N20D
Absolute Maximum Ratings
Parameter Max. Units
ID © Tc = 25°C Continuous Drain Current, Vas @ 10V 24
ID © To = 100°C Continuous Drain Current, I/ss © 10V 17 A
IDM Pulsed Drain Current (D 96
PD @TA = 25°C Power Dissipation (D 3.8 W
PD @TC = 25°C Power Dissipation 170
Linear Derating Factor 1.1 W/°C
l/ss Gate-to-Source Voltage t 30 V
dv/dt Peak Diode Recovery dv/dt © 3.3 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw© 10 lbf-in (1.1N0m)
Typical SMPS Topologies
0 Telecom 48V input Forward Converter
Notes (D through s are on page 11
1
7/20/04
IRFB/llRFS/lRFSL23N20DPbF
International
Static © Tr, = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V Vas = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.26 - VPC Reference to 25°C, ID = 1mA ©
Rome”) Static Drain-to-Source On-Resistance - 0.10 Q l/ss = 10V, ID = 14A ©
Vegan) Gate Threshold Voltage 3.0 - 5.5 V Vos = Vas, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 PA Vros = 200V, l/ss = 0V
- - 250 VDS = 160V, l/ss = 0V, To = 150°C
I Gate-to-Source Forward Leakage - - 100 A Vas = 30V
GSS Gate-to-Source Reverse Leakage - - -100 n Vas = -30V
Dynamic @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 13 - - S Vos = 50V, ID = 14A
09 Total Gate Charge - 57 86 ID = 14A
Qgs Gate-to-Source Charge - 14 21 nC VDs = 160V
di Gate-to-Drain ("Miller") Charge - 27 40 Vas = 10V, C9©
td(on) Turn-On Delay Time - 14 - VDD = 100V
tr Rise Time - 32 - ns lr) = 14A
td(off) Turn-Off Delay Time - 26 - Rs = 4.69
tt Fall Time - 16 - VGS = 10V ©
Ciss Input Capacitance - 1960 - l/tss = 0V
Coss Output Capacitance - 300 - Vos = 25V
Crss Reverse Transfer Capacitance - 65 - pF f = 1.0MHz©
Coss Output Capacitance - 2200 - Vss = 0V, I/os = 1.0V, f = 1.0MHz
Coss Output Capacitance - 120 - Vas = 0V, VDS = 160V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 220 - l/ss = 0V, VDs = 0V to 160V S
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy©© - 250 mJ
IAR Avalanche Current© - 14 A
EAR Repetitive Avalanche Energy© - 17 mJ
Thermal Resistance
Parameter Typ. Max. Units
Fka: Junction-to-Case - 0.90
Recs Case-to-Sink, Flat, Greased Surface © 0.50 - °C/W
RNA Junction-to-Ambient) - 62
ReJA Junction-to-Ambient® - 40
iode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
. - - 24 .
(Body Diode) A showing the
ISM Pulsed Source Current _ - 96 integral reverse G
(Body Diode) CD© p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, Is = 14A, Vas = 0V ©
trr Reverse Recovery Time - 200 300 ns Tu = 25°C, IF = 14A
Qrr Reverse RecoveryCharge - 1300 1940 nC di/dt = 1OOA/ps (9
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+Lo)
2
