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IRFB17N60K
600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
:raRIectifier
Applications
SMPS MOSFET
0 Switch Mode Power Supply (SMPS)
PD - 94578
IRFB17N60K
HEXFET© Power MOSFET
Uninterruptible Power Supply
RDS(on) typ.
0 High Speed Power Switching
0 Hard Switched and High Frequency
Circuits
Benefits
0 Smaller TO-220 Package
q Low Gate Charge Qg results in Simple Drive Requirement
0 Improved Gate, Avalanche and Dynamicdv/dt Ruggedness
Fully Characterized Capacitance and Avalanche Voltage TO-220AB
and Current
Absolute Maximum Ratings
Parameter Max. Units
ID © To = 25°C Continuous Drain Current, l/ss @ 10V 17
ID @ To = 100°C Continuous Drain Current, I/as @ 10V 11 A
IDM Pulsed Drain Current (D 68
PD ©Tc = 25°C Power Dissipation 340 W
Linear Derating Factor 2.7 W/°C
Ves Gate-to-Source Voltage * 30 V
dv/dt Peak Diode Recovery dv/dt © 11 V/ns
TJ Operating Junction and -55 to + 150
TSTS Storage Temperature Range
Soldering Temperature, for 10 seconds 300 "C
(1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 N
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAs Single Pulse Avalanche Energy© - 330 mJ
IAR Avalanche Current0) - 17 A
EAR Repetitive Avalanche Energy© - 34 mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.37
Recs Case-to-Sink, Flat, Greased Surface 0.50 - ''C/W
RQJA Junction-to-Ambient - 58
1
11/19/02
IRFliy17N60K
International
TOR Rectifier
Static tii) T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units) Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 600 - - V Viss = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.60 - V/°C Reference to 25°C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - 0.35 0.42 Q VGS = 10V, ID = 10A ©
VGS(th) Gate Threshold Voltage 3.0 - 5.0 V Vos = Vas, Io = 250pA
Koss Drain-to-Source Leakage Current - - 25500 'd VS: . [1'g,' "ti, _- g, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 30V
Gate-to-Source Reverse Leakage - - -100 VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 5.9 - - S Vos = 50V, ID = 10A
% Total Gate Charge - - 99 ID = 17A
095 Gate-to-Source Charge - - 32 n0 Vos = 480V
di Gate-to-Drain ("Miller") Charge - - 47 VGS = 10V, See Fig. 6 and 13 ©
tdwn) Turn-On Delay Time - 25 - Vroro = 300V
tr Rise Time - 82 - ns ID = 17A
tam) Turn-Off Delay Time - 38 - Rs = 7.59
tf Fall Time - 32 - I/ss = 10V,See Fig. 10 (E)
Ciss Input Capacitance - 2700 - Vss = 0V
Coss Output Capacitance - 240 - Vos = 25V
Crss Reverse Transfer Capacitance - 21 - pF f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 2950 -.- Vss = 0V, Vos = 1.0V, f = 1.0MHz
CDSS Output Capacitance - 67 - Vss = 0V, Vos = 480V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 120 - I/ss = 0V, VDs = 0V to 480V s
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 17 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) (D _ - 68 p-n junction diode. s
VSD Diode Forward Voltage - - 1.5 V TJ = 25°C, Is = 17A, VGS = 0V (9
trr Reverse Recovery Time - 520 780 ns To = 25°C, IF = 17A
Qrr Reverse RecoveryCharge - 5620 8430 nC di/dt = 1OOA/ps ©
trr Reverse Recovery Time - 580 870 ns To = 125°C, V = 17A
Qrr Reverse RecoveryCharge - 6470 9700 nC di/dt = 100A/ps (D
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature.
C) Starting To = 25°C, L = 2.3mH, Rs = 259,
|AS=17A,
© Iso f 17A, di/dt S 380A/ps, VDD S V(BR)DSS:
T J f 150°C
© Pulse width f 300ps; duty cycle S 2%.
