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Partno	Mfg	Dc	Qty	Available	Descript
IRFB11N50A \|IRFB11N50A	IR	N/a	450	avai	500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
IRFB11N50APBF	IR	N/a	12000	avai	500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

IRFB11N50APBF ,500V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD- 91809BSMPS MOSFETIRFB11N50A®HEXFET Power MOSFET
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IRFB11N50A -IRFB11N50APBF
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD- 91809B
SMPS MOSFET
HEXFET® Power MOSFETSwitch Mode Power Supply ( SMPS )Uninterruptable Power SupplyHigh speed power switching
Benefits
ApplicationsLow Gate Charge Qg results in Simple
Drive RequirementImproved Gate, Avalanche and dynamic
dv/dt RuggednessFully Characterized Capacitance and
Avalanche Voltage and Current
Applicable Off Line SMPS Topologies:
l Two Transistor Forward
l Half & Full Bridge
IRFB11N50A
1
Notes � through � are on page 8
l Power Factor Correction Boost
Absolute Maximum Ratings
IRFB11N5OA
Static @ TJ = 25°C (unless otherwise specified)
Dynamic @ TJ = 25°C (unless otherwise specified)
Avalanche Characteristics
Diode Characteristics
Thermal Resistance
IRFB11N50A
3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
IRFB11N5OA
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
e (V , Drain-to-Source Voltage (V)
IRFB11N50A
5
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)trtd(off)tf
Fig 10b. Switching Time Waveforms
-VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRFB11N5OA
D.U.T.VDSIG
3mA
VGS12V
CurrentRegulator
SameTypeasD.U.T.
CurrentSamplingResistors
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain CurrentFig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
IASVDSVDD
15V
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
0.01.02.03.04.05.06.07.0I , Avalanche Current (A)

, A

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