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IRF9630SIRN/a150avai-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package


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IRF9630S
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
International
Rectifier
PD-9.920
HEXFET® Power MOSFET
0 Surface Mount
0 Available in Tape & Reel
0 Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
o P-Channel
o Fast Switching
0 Ease of Paralleling
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SMD-220 is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The SMD-220
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
SMD-220
lt‘ :\
B} -l~‘i
Parameter Max. Units
Io © Tc = 25°C Continuous Drain Currant, Vos @ -10 V -6.5
In @ To = 100°C Continuous Drain Current, Ves (ii) -10 V -4.0 A
IDM Pulsed Drain Current (D -26
Pp @ To = 25°C Power Dissipation 74 W
Po © TA = 25°C Power Dissipation (PCB Mount)" 3.0
Linear Derating Factor 0.59 W /° C
Linear Derating Factor (PCB Mount)" 0.025
I/ss Gate-to-Source Voltage k20 V
EAs Single Pulse Avalanche Energy © 500 md
[AR Avalanche Current co -6.4 A
EAR Repetitive Avalanche Energy (i) 7.4 mJ
dv/dt Peak Diode Recovery dv/dt co -5.0 _ V/ns
Tu, Tsm Junction and Storage Temperature Range -55 to +150 0 C
iSoldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rem Junction-to-Case - - 1.7
Ram _Junction-to-Ambient (PCB mount)" - - 4O °C/W
Flax Junction-to-Ambient - - 62
** When mounted on I" square PCB (FR-4 or G-10 Material),
For recommended footprint and soldering techniques refer to application note #AN-994,
IRF963OS
Electrical Characteristics @ Tg = 25°C (unless otherwise specified)
Ed,Mit
Parameter Min. Typ. Max. Units Test Conditions
V(Bamss Drain-to-Source Breakdown Voltage -200 - - V Vas-MN, iD=-250uA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - -0.24 - VPC Reference to 25°C, baz-1mA
R03(on) Static Drain-to-Source On-Resistance - - 0.80 Q Ves=-1OV, ID=-3.9A ©
VGS(1h) Gate Threshold Voltage 4.0 - ..4.0 V Vros=Vss, lo=-250WA
gm Forward Transconductance 2.8 - - S Vos=-50V, b---3.9A (D
loss Drain-to-Source Leakage Current - - -100 WA VDs=-200V, Vss=0V
- - -500 VDs=-160V, Vss---0V, To--125oC
lass Gate-to-Source Forward Leakage - -- -100 n A Ves=-20V
Gate-to-Source Reverse Leakage - - 100 Ves=20V
th Total Gate Charge - - 29 b-c-6.5A
Qgs Gate-to-Source Charge - - 5.4 nC Vos=-160V
di Gate-to-Drain ("Miller") Charge - - 15 Ves=-1OV See Fig. 6 and 13 ©
td(0n) Turn-On Delay Time - 12 - VDD=-1OOV
tr Rise Time - 27 - n s io=-6.5A
1am") Turn-Off Delay Time - 28 - He=12§2
t: Fall Time - 24 - RD=1SQ See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - tit,viralti'nd,; i.
nH from package (jj)
Ls Internal Source Inductance - 7.5 - Ind center df
die contact s
Ciss Input Capacitance - 700 - Vss=0V
Coss Output Capacitance .....- 200 - pF Vos=-25V
Crss Reverse Transfer Capacitance - 40 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - -6.5 A showing the
ISM Pulsed Source Current - - -26 integral reverse G
(Body Diode) C) p-n junction diode. s
Van Diode Forward Voltage - - -6.5 V TJ=25°C, ls=-6.5A, Vss--0V ©
tn Reverse Recovery Time - 200 300 ns TJ=25°C, Irc-cs-EEA
er Reverse Recovery Charge - 1.9 2.9 p1C di/dt=100A/ps C4)
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls-rl-o)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=-50V. starting TJ=25°C, L=17mH
RG=25§2, |As=-6.5A (See Figure 12)
TJS1 50°C
© Isos-6.5A, di/dts120A/us, VDDSWBRpss,
GD Pulse width 5 300 ps; duty cycle 32%.
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