IRF9540NSTRRPBF ,-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.GD SGate Drain SourceAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuo ..
IRF9540PBF ,-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
IQR
Rectifier
PD-9.421 C
llRF9540
HEXFET? Power MOSFET
Dynamic dv/d ..
IRF9540S ,-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageInternational
RectifierIRF9540S
IRF9610 ,-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
IRF9610 ,-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB packagelntemational
Rectifier
HEXFET® Power MOSFET
0 Dynamic dv/dt Rating
q P-Channel
q Fast ..
IRF9610 ,-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
ISL6251AHAZ , Low Cost Multi-Chemistry Battery Charger Controller
ISL6251AHAZ , Low Cost Multi-Chemistry Battery Charger Controller
ISL6251AHRZ , Low Cost Multi-Chemistry Battery Charger Controller
ISL6251AHRZ , Low Cost Multi-Chemistry Battery Charger Controller
ISL6251HAZ , Low Cost Multi-Chemistry Battery Charger Controller
ISL6251HAZ-T , Low Cost Multi-Chemistry Battery Charger Controller
IRF9540NSTRRPBF
-100V Single P-Channel HEXFET Power MOSFET in a TO-262 package
PD - 96030
IRF9540NSPbF
|RF954ONLPbF
HEXFET® Power MOSFET
International
TOR Rectifier
q Advanced Process Technology D
q Ultra Low On-Resistance
q 150°C Operating Temperature VDSS = -1 00V
q Fast Switching
o Repetitive Avalanche Allowed up to Tmax RDS(on) = 1 17mQ
0 Some Parameters are Different from G
IRF9540NS/L ID = -23A
0 P-Channel S
o Lead-Free
Description D D
Features of this design are a 150°C junction (14iiit tii))
operating temperature, fast switching speed and "Ri'Et1, _ V
improved repetitive avalancherating.Thesefea- l, os , is
tures combine to make this design an extremely G G
efficient and reliable device for use in a wide D2Pak TO-262
variety of other applications. IRF9540NSPbF |RF954ONLPbF
Gate Drain Source
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vss @ -10V -23 A
ID @ To = 100°C Continuous Drain Current, VGS @ -10V -14
IBM Pulsed Drain Current C) -92
PD @TA = 25°C Maximum Power Dissipation 3.1 W
PD @Tc = 25°C Maximum Power Dissipation 110
Linear Derating Factor 0.9 W/°C
VGS Gate-to-Source Voltage t 20 V
EAS Single Pulse Avalanche Energy © 84 mJ
|AR Avalanche Current C) -14 A
EAR Repetitive Avalanche Energy co 11 mJ
dv/dt Peak Diode Recovery dv/dt © -13 V/ns
TJ Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 1 .1 °C/W
ROJA Junction-to-Ambient (PCB Mount, steady state) S - 40
1
09/30/05
http://www.datas
heetcataloa.Com/
IRF9540NS/LPbF
International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bmss Drain-to-Source Breakdown Voltage -100 - - V Vas = 0V, ID = -250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - -0.11 - V/°C Reference to 25°C, ID = -1mA
Roam) Static Drain-to-Source On-Resistance - - 117 m9 Ves = -10V, ID = -14A ©
Vasith) Gate Threshold Voltage -2.0 - -4.0 V Vos = Ves: ID = -250PA
gfs Forward Transconductance 5.6 - - S Vos = -50V, ID = -14A
IDSS Drain-to-Source Leakage Current - - -50 pA Vos = -100V, Ves = 0V
- - -250 Vos = -80V, Ves = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vas = -20V
Gate-to-Source Reverse Leakage - - -1OO Vss = 20V
q, Total Gate Charge - 73 110 no ID = -14A
Qgs Gate-to-Source Charge - 13 20 Vos = -80V
di Gate-to-Drain ("Miller") Charge - 38 57 Vas = -10V GD
tum) Turn-On Delay Time - 13 - ns VDD = -50V
t, Rise Time - 64 - ID = -14A
td(off) Turn-Off Delay Time - 40 - Re = 5.19
t, Fall Time - 45 - Vss = -10V GD
u, Internal Drain Inductance - 4.5 - nH Between lead, A 0
6mm (0.25in.) 111%)
Ls Internal Source Inductance - 7.5 - from package Big
and center of die contact 5
Ciss Input Capacitance - 1450 - pF l/ss = 0V
Coss Output Capacitance - 430 - Vos = -25V
Crss Reverse Transfer Capacitance - 230 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - -23 MOSFET symbol
(Body Diode) A showing the
Iss, Pulsed Source Current - - -92 integral reverse
(Body Diode) (D p-n junction diode.
VSD Diode Forward Voltage - - -1.6 V Tu = 25°C, ls = -14A, VGS = 0V C)
trr Reverse Recovery Time - 140 210 ns Tu = 25°C, IF = -14A, VDD = -25V
Qrr Reverse Recovery Charge - 890 1340 nC di/dt = -100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
oo Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11)
© Starting T: = 25°C, L = 0.88mH
Rs-- 259, IAS = -14A. (See Figure 12)
© [SD S -14A, di/dt S -620A/ps, VDD S V(BR)oss,
To s: 150°C.
© Pulse width S 300ps; duty cycle s: 2%.
(9 When mounted on 1" square PCB (FR-4or G-1O
Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
