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IRF9530NS-IRF9530NSTRL-IRF9530NSTRR
-100V Single P-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR Rectifier
PD - 91523A
IRF9530NS/L
HEXFET0 Power MOSFET
Advanced Process Technology
Surface Mount (IRF9530NS)
Low-profile through-hole (IRF9530NL)
175°C Operating Temperature
Fast Switching
P-Channel
o Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designerwith an extremely
efhcient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
Thethrough-hole version (IRF9530NL) is availableforlow-
profile applications.
Absolute Maximum Ratings
. V RDS(on) = 0.209
VDSS = -100V
ID = -14A
TO-262
Parameter
k, @ TC = 25°C
Continuous Drain Current, Vss @ -10VS
ID @ TC =100°C
Continuous Drain Current, Ves @ -10VS
Pulsed Drain Current cos
PD @TA = 25°C
Power Dissipation
Pro @To = 25°C
Power Dissipation
Linear Derating Factor
0.53 W/''C
Gate-to-Source Voltage
Single Pulse Avalanche EnergyOS
250 m]
Avalanche Current0)
-8.4 A
Repetitive Avalanche Energy0)
7.9 mJ
Peak Diode Recovery dv/dt ©©
-5.0 V/ns
Operating Junction and
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Thermal Res
istance
Parameter
Typ. Max. Units
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
- 40 CM
5/13/98
International
IRF9530NS/L
IEER Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 - - V Was = 0V, lo = -250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient _.-. -O.11 - V/°C Reference to 25°C, ID = -1mA©
Roam) Static Drain-to-Source On-Resistance - - 0.20 n VGS = -10V, ID = -8.4A ©
Vegan) Gate Threshold Voltage -2.0 - -4.0 V Vros = I/ss, ID = -250PA
Ts Forward Transconductance 3.2 - - S Vros = -50V, ID = -8.4AS
loss Drain-to-Source Leakage Current - - -25 pA Vros = -100V, VGS = 0V
- - -250 Vos = -80V, VGS = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
Q9 Total Gate Charge - - 58 ID = -8.4A
Qgs Gate-to-Source Charge - - 8.3 nC Ws = -80V
di Gate-to-Drain ("Miller") Charge - - 32 VGS = -10V, See Fig. 6 and 13 CNS)
tdon) Turn-On Delay Time - 15 - VDD = -50V
tr RiseTime - 58 - ID = -8.4A
tdist) Turn-Off Delay Time - 45 - ns Rs = 9.19
tf FallTime - 46 - RD = 6.29, See Fig. 10 Cl)
Ls Internal Source Inductance - 7.5 - nH Between lead, .
and center of die contact
Ciss Input Capacitance - 760 - VGS = 0V
COSS Output Capacitance - 260 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 170 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFETsymbol D
(Body Diode) - - -14 A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) (DO) - - -56 p-n junction diode. S
VSD Diode Forward Voltage - - -1.6 V TJ = 25°C, Is = -8.4A, VGS = 0V co
trr Reverse Recovery Time - 130 190 ns T: = 25°C, IF = -8.4A
Qrr Reverse Recovery Charge - 650 970 nC di/dt = -100A/ps cos
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See Fig. 11 )
© Starting TJ = 25°C, L =7.0mH
Rs = 259, IAS = -8.4A. (See Figure 12)
© ISD S -8.4A, di/dt S -490A/ps, VDD S V(BR)ross,
TJ S 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
© Pulse width s: 300ps; duty cycles 2%.
© Uses IRF9530N data and test conditions
For recommended footprint and soldering techniques refer to application note #AN-994.
