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IRF9530N-IRF9530N.-IRF9530NPBF
-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
International
:rartR3ctifier
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designerwith an extremely
ethcient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
PD - 91482C
RF9530N
HEXFET® Power MOSFET
VDSS = -100V
RDS(on) = 0.209
ID = -14A
levels to approximately 50 watts. The low thermal TO-220AB
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ -10V -14
ID @ Tc = 100°C Continuous Drain Current, Vss @ -10V -10 A
IDM Pulsed Drain Current (O -56
Po @Tc = 25''C Power Dissipation 79 W
Linear Derating Factor 0.53 W/°C
I/ss Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy© 250 mJ
IAR Avalanche CurrentC) -8.4 A
EAR Repetitive Avalanche Energy© 7.9 mJ
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 Ibfoin (1.1 Nom)
Thermal Resistance
Parameter Typ. Max. Units
Rsuc Junction-to-Case - 1 .9
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
ReJA Junction-to-Ambient - 62
5/13/98
IRF9530N
International
TO.R Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 - - V VGS = 0V, ID = -250PA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coefhcient - -0.11 - V/°C Reference to 25°C, ID = -1mA
Roam) Static Drain-to-Source On-Resistance - - 0.20 Q VGS = -10V, ID = -8.4A ©
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V Vos = VGS, ID = -250pA
gts Forward Transconductance 3.2 - - S Vos = -50V, lo = -8.4A
loss Drain-to-Source Leakage Current - - -25 pA Vros = -100V, VGS = 0V
- - -250 Vros = -80V, VGS = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = -20V
% Total Gate Charge - - 58 ID = -8.4A
Qgs Gate-to-Source Charge - - 8.3 nC VDs = -80V
di Gate-to-Drain ("Miller") Charge - - 32 V93 = -10V, See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 15 - VDD = -50V
tr Rise Time - 58 - ID = -8.4A
tum Turn-Off Delay Time - 45 - ns Rs = 9.19
tf Fall Time - 46 - Ro = 6.29, See Fig. 10 ©
Lo Internal Drain Inductance - 4.5 - Between le"': f D
nH 6mm (0.25m.) GALE
from package
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 760 - l/ss = 0V
Cass Output Capacitance - 260 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 170 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ - -14 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) co - - -56 p-n junction diode. s
I/so Diode Forward Voltage - - -1.6 V TJ = 25°C, ls = -8.4A, I/ss = 0V ©
tn Reverse Recovery Time - 130 190 ns TJ = 25''C, IF = -8.4A
G, Reverse RecoveryCharge - 650 970 nC di/dt = -100A/ps (0
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See Ftg. 11 )
© Starting T J = 25°C, L = 7.0mH
RG = 259, IAS = -8.4A. (See Figure 12)
TJs175°C
© ISD f -8.4A, di/dt f -490/Ups, VDD f V(BR)DSS:
G) Pulse width S 300ps; duty cycle S 2%.
