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IRF9240
-200V Single P-Channel Hi-Rel MOSFET in a TO-204AA package
PD - 90420
International
IEZR Rectifier
REPETITIVE AVALANCHEAND dv/dt RATED IRF924O
HEXFET®TRANSISTORS 200V, P-CHANNEL
THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number BVDSS RDS(on) m
IRF9240 -200V 0.5Q -11A _7 -.
l #11.
© . . c.r,ics"d,kC''t,i..,
The HEXFET technology IS the key to International raga!
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis- T0-3
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab- Features:
lished advantages of MOSFETs such as voltage control, u
very fast switching, ease of parelleling and temperature
Repetitive Avalanche Ratings
. . . I: Dynamic dv/dt Rating
stability of the electrical parameters. a Hermetically Sealed
They are well suited for applications such as switching a Simple Drive Requirements
power supplies, motor controls, inverters, choppers, audio u Ease of Paralleling
amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 0V, TC = 25°C Continuous Drain Current -1 1
ID @ VGS = 0V, TC = 100°C Continuous Drain Current -7.0 A
IDM Pulsed Drain Current C) -44
PD @ TC = 25°C Max. Power Dissipation 125 W
Linear Derating Factor 1.0 W/°C
VGS Gate-to-Source Voltage £20 V
EAS Single Pulse Avalanche Energy © 500 ml
IAR Avalanche Current Cf) -l l A
EAR Repetitive Avalanche Energy co 12.5 m.)
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
T] Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 (0.063 in. (1.6mm) from case for los)
Weight 11.5(typical) g
For footnotes refer to the last page
1
01/24/01
IRF9240 International
TOR Rectifier
Electrical Characteristics (ii) Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage -200 - - V VGS = 0V, ID = -1.0mA
ABVDss/ATJ Temperature Coefficient of Breakdown - -0.20 - V/°C Reference to 25°C, ID = -1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.5 Q VGS = -10V, ID = -7.0AC0
Resistance - - 0.58 VGS = -10V, 11) = -11A ©
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V VDS = VGS, ID = -250pA
gfs Forward Transconductance 4.0 - - S " VDS > -15V, IDS = -7.0A ©
IDSS Zero Gate Voltage Drain Current - - -25 VDS=-l60V,VGS=0V
- - -250 pA VDS =-160V
VGS = 0V, T] = 125°C
IGSS Gate-to-Source Leakage Forward - - - 100 VGS = -20V
IGSS Gate-to-Source Leakage Reverse - - 100 nA VGS = 20V
Qg Total Gate Charge 28 - 60 VGS =-10V, ID = -11A
Qgs Gate-to-Source Charge 3.0 - 15 nC VDS =-100V
Qgd Gate-to-Drain (‘Miller’) Charge 4.5 - 38
td(on) Turn-On Delay Time - - 35 VDD = -100V, ID = -11A,
tr Rise Time - - 85 RG = 9.19
td(off) Turn-Off Delay Time - - 85 ns
tf Fall Time - - 65
LS + LD Total Inductance - 6. 1 - nH Measured from drain lead (6mm/O.25in. from
package) to source lead (6mm/0.25in. from
package)
Ciss Input Capacitance - 1200 VGS = 0V, VDS = -25V
Coss Output Capacitance - 570 - pF f = 1.0MHz
Crss Reverse Transfer Capacitance - 81 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - -l 1 A
ISM Pulse Source Current (Body Diode) C) - - -44
VSD Diode Forward Voltage - - -4.6 V Tj = 25°C, ls =-llA, VGS = 0V co
trr Reverse Recovery Time - 270 440 nS Tj = 25°C, 1F = -11A, di/dt S -100A/us
QRR Reverse Recovery Charge - - 7.2 pC VDD S -50V ©
ton F orward Turn-On Time Intrinsic tum-on time is negligible. Turn-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case - - 1.0 °C/W
Rth J A J unction-to-Ambient - - 30 soldered to a 2" square copper-clad board
For footnotes refer to the last page
2
