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IRF8714GTRPBF
Halogen Free and Lead Free 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 96263
International
TOR Rectifier IRF8714G PbF
Applications HEXFET© Power MOSFET
q Control MOSFET of Sync-Buck
Converters used for Notebook VDSS RDS(On) max tity
ProCessorPower 30V 8.7mg2@sz = 10V 8.1 nC
0 Control MOSFET for Isolated DC-DC
Converters in Networking Systems
Benefits
0 Very Low Gate Charge
Very Low RDS(on) at 4.5V Vss
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage s E3
and Current G EED“ SID D
20V 1/ss Max. Gate Rating Top View SO-8
100% tested for Rg
Lead-Free
Halogen-Free
Description
The IRF8714GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The lRF8714GPbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for Notebook and Netcom applications.
Absolute Maximum Ratings
SEED‘ “3310
Parameter Max. Units
VDs Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage 1 20
ID @ T, = 25°C Continuous Drain Current, l/ss @ 10V 14
ID @ T, = 70°C Continuous Drain Current, Ves @ 10V 11 A
IDM Pulsed Drain Current OD 110
PD @TA = 25°C Power Dissipation 2.5 W
PD @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
TJ Operating Junction and -55 to + 150 ''C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead © _ 20
F10JA Junction-to-Ambient © _ 50 OC/W
Notes (D through (S) are on page 9
1
07/10/09
|RF8714GPbF
International
TOR Rectifier
Static @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient -- 0.021 -- VPC Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance -- 7.1 8.7 mn Vos = 10V, ID = 14A oo
- 10.9 13 VGS=4.5V, b--11A0)
VGS(th) Gate Threshold Voltage 1.35 1.80 2.35 v Vos = Vss, ID = 25pA
AVesuh) Gate Threshold Voltage Coefficient - -6.0 - mV/°C Vos = Vas, ID = 25pA
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, Vas = 0V
- - 150 Vos = 24V, Vas = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -1OO Vas = -20V
gfs Forward Transconductance 71 - - S Vos = 15V, ID = 11A
09 Total Gate Charge - 8.1 12
0951 Pre-Vth Gate-to-Source Charge - 1.9 - I/rss = 15V
Ass Post-Vth Gate-to-Source Charge -- 1.0 -- nC Vss = 4.5V
di Gate-to-Drain Charge - 3.0 -- ID = 11A
ngdr Gate Charge Overdrive --.- 2.2 - See Figs. 15 & 16
st Switch Charge (0952 + di) - 4.0 -
Qoss Output Charge - 4.8 - nC Vos = 16V, l/ss = 0V
R, Gate Resistance - 1.6 2.6 Q
tam) Turn-On Delay Time - 10 - VDD = 15V, Vss = 4.5V
t, Rise Time - 9.9 - ID =11A
tam) Turn-Off Delay Time - 11 - ns Rs = 1.89
tf Fall Time - 5.0 - See Fig. 18
Ciss Input Capacitance - 1020 - Vss = ov
Coss Output Capacitance - 220 - pF I/rss = 15V
Crss Reverse Transfer Capacitance -- 110 -- f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy Q) - 65 mJ
|AR Avalanche Current LO - 11 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - --- 3.1 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 110 integral reverse G
(Body Diode) CD p-n junction diode. S
Vso Diode Forward Voltage - - 1.0 V To = 25°C, ls = 11A, l/ss = 0V ©
tn Reverse Recovery Time - 14 21 ns To = 25°C, IF = 11A, VDD = 15V
er Reverse Recovery Charge - 15 23 no di/dt = 300A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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