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IRF8513IRN/a4700avai30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package


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IRF8513
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
Applications
Dual SO-8 MOSFET for POL
Converters in Notebook Computers, Servers,
Graphics Cards, Game Consoles
and Set-Top Box
Benefits
PD - 96196
IIRF8513PbF
HEXFET© Power MOSFET
Low Gate Charge and Low RDS(on)
Fully Characterized Avalanche Voltage
and Current
20V I/ss Max. Gate Rating
100% Tested for Rs
Lead-Free (Qualified to 260°C Reflow)
RoHS Compliant (Halogen Free)
VDSS RDS(0n) max ID
30V Q1 15.5mQ@VGS =10V 8.0A
02 12.7mf2@Vas =10V 11A
G1 I E D1 _ _ .
S2 [Z ' - j Sl /D2 ,,jkii'iii" x:
S2 E E S1/D2 'cc/jj''],.;:-':)''"'"'''''''
GZE E S1/D2
Description
The lRF8513PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard
SO-8 package. The IRF8513PbF has been optimized for parameters that are critical in synchronous buck operation
including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make
this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook
and Netcom applications.
Absolute Maximum Ratings
Parameter 01 Max. I 02 Max. Units
Vos Drain-to-Source Voltage 30 V
l/tss Gate-to-Source Voltage A 20
lo © TA = 25°C Continuous Drain Current, Ves © 10V 8.0 11
ID @ TA = 70°C Continuous Drain Current, Vas @ 10V 6.2 9.0 A
lost Pulsed Drain Current OD 64 88
Pp @TA = 25°C Power Dissipation 1.5 2.4 W
PD @TA = 70°C Power Dissipation 1.05 1.68
Linear Derating Factor 0.01 0.02 W/°C
T ti ti
J Opera Ing Junc Ion and -55 to + 175 =
TSTG Storage Temperature Range
Thermal Resistance
Parameter 01 Max. 02 Max. Units
RM Junction-to-Drain Lead co 42 42 ''t2N
ROJA Junction-to-Ambient ©© 100 62.5
Notes co through © are on page 11
ORDERING INFORMA TION:
See detailed ordering and shipping information on the last page of this data sheet.
1
11/05/08

IRF8513PbF
International
TO.R Rectifier
Static © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage Q1&Q2 30 - - V Vss = 0V, ID = 250UA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient Q1 - 0.021 - V/°C Reference to 25°C, lo = 1mA
Q2 - 0.021 -
Q1 - 12.5 15.5 l/ss =10V, ID = 8.OA ©
RDswn) Static Drain-to-Source On-Resistance - 18.1 22.2 mg VGS = 4.5V, ID = 6.4A ©
Q2 - 10.2 12.7 Vss=10V,lo--11A©
-- 14.2 16.9 l/ss = 4.5V, ID = 8.6A ©
Vsam) Gate Threshold Voltage Q1&Q2 1.35 1.8 2.35 V Q1: I/cos = Vas, ID = 25pA
AVGSHMIATJ Gate Threshold Voltage Coefficient Q1 - -6.5 - mV /° C Q2: Vos = Vas, ID = 25pA
Q2 - -6.9 -
|DSS Drain-to-Source Leakage Current Q1&02 - - 1.0 A Vos = 24V, Vas = 0V
Q1&Q2 - - 150 y Vos = 24V, Vas = 0V, T, = 125°C
less Gate-to-Source Forward Leakage Q1&t22 - - 100 n A Vss = 20V
Gate-to-Source Reverse Leakage Q1802 - -- -100 VGs = -20V
gfs Forward Transconductance Q1 19 - - S VDS = 15V, ID = 6.4A
Q2 24 - - Vos =15V, b = 8.6A
CA, Total Gate Charge Q1 - 5.7 8.6
Q2 - 7.6 11 .4
0051 Pre-Vth Gate-to-Source Charge 01 - 1.2 - Q1
Q2 - 1.7 - I/os = 15V
0052 Post-Vth Gate-to-Source Charge Q1 -- 0.68 - Vss = 4.5V, ID = 6.4A
Q2 - 1.0 - n C
%, Gate-to-Drain Charge Q1 -- 2.2 -- Q2
Q2 - 3.1 - Vos = 15V
andr Gate Charge Overdrive Q1 - 1.6 - Vos = 4.5V, ID = 8.6A
Q2 - 1 .9 -
st Switch Charge (0052 + tk,) Q1 - 2.9 - See Fig. 31a &31 b
Q2 - 4.0 -
Qoss Output Charge Q1 - 3.9 - nC Vos = 16V, Vas = 0V
Q2 - 5.2 --
Ra Gate Resistance Q1 - 2.1 3. Q
Q2 - 1 .4 3.1
td1on) Turn-On Delay Time Q1 - 8.0 Q1
Q2 - 8.9 - VDD = 15V,Vas = 4.5V
t, Rise Time 01 - 8.5 - ID = 6.4A
Q2 - 10.7 - ns Rs = 1.89 See Fig.30a & 30b
tmom Turn-Off Delay Time Q1 - 8.8 -- Q2
Q2 _ 9.3 - VDD = 15V, l/ss = 4.5V
t, Fall Time Q1 .-_._ 5.7 - ID = 8.6A
Q2 - 5.0 - RG = 1.8W
Ciss Input Capacitance Q1 - 766 -
Q2 - 1024 - Ves = 0V
Coss Output Capacitance Q1 - 172 - pF Vos = 15V
Q2 - 238 - f = 1.0MHz
Crss Reverse Transfer Capacitance Q1 - 83 -
Q2 -- 116 --
Avalanche Characteristics
Parameter Typ. 01 Max. 02 Max. Units
EAS Single Pulse Avalanche Energy © - 49 70 mJ
IAR Avalanche Current (D - 6.4 8.6 A
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current Q1 - - 1.9 A MOSFET symbol . A _,'
(Body Diode) Q2 - - 3.0 showing the ff“
Iss, Pulsed Source Current Q1 - - 64 A integral reverse L51 _ j [
(Body Diode) (D Q2 - - 88 p-n junction diode. ' _ ',
Vso Diode Forward Voltage Q1 - - 1.0 V Tu = 25°C, ls = 6.4A, Vss = 0V ©
Q2 -- -- 1.o TJ = 25°C, ls = 8.6A, Vas = ov ©
trr Reverse Recovery Time Q1 - 15 23 ns Q1 T: = 25°C, IF = 6.4A,
Q2 _ 17 26 VDD = 15V, di/dt = 100A/ps ©
Q,, Reverse Recovery Charge 01 - 7.2 11 nC Q2 T, = 25°C, IF = 8.6A,
Q2 - 9.3 14 VDD =15V,di/dt=1OOA/ps ©
ton Forward Trun-On Time Intrinsic turn -on time is negligible (turn -on is dominated by LS+LD)
2

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