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IRF822IRN/a150avaiN-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A.
IRF822. |IRF822STN/a56avaiN-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A.
IRF420IRN/a9avaiN-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V


IRF822 ,N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A.nu . m.— FAIRCHILD SEMICONDUCTOR ELI os:lllvuawiu; DDE?'=ILLI i? r M IRF420-423fiRF820-82 ..
IRF822. ,N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A.applications, fi) such as switching power supplies, converters, AC and DC motor controls, relay a ..
IRF822FI ,N-channel enhancement mode power MOS transistor, 500V, 1.9AABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF 820 822 820FI 822Fl Vos Drain-source V ..
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IRF420-IRF822-IRF822.
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V
ic,good price


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