IRF820 ,POWER MOSFETIRF820N-CHANNEL 500V - 2.5Ω - 4A TO-220PowerMesh™II MOSFETTYPE V R IDSS DS(on) DIRF820 500 V < 3 Ω ..
IRF820. ,POWER MOSFETInternati
onal
TOR Rectifier
HEXFET® Power MOSFET
q Dynamic dv/dt
. Repetitive Ava
. ..
IRF820A ,500V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD- 93773ASMPS MOSFETIRF820A®HEXFET Power MOSFET
IRF820A. ,500V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD- 93773ASMPS MOSFETIRF820A®HEXFET Power MOSFET
IRF820AL ,500V Single N-Channel HEXFET Power MOSFET in a TO-262 packageApplicationsV R (on) max IDSS DS Dl Switch Mode Power Supply (SMPS)l Uninterruptable Power Supply 5 ..
IRF820AS ,500V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD- 93774AIRF820ASSMPS MOSFET IRF820AL®HEXFET Power MOSFET
ISL60002BAH333Z-TK , Precision Low Power FGA™ Voltage References
ISL60002CIH311Z-TK , Precision Low Power FGA™ Voltage References
ISL60002DIH330Z-TK , Precision Low Power FGA™ Voltage References
ISL6115ACBZ , 12V Power Distribution Controllers
ISL6115CB ,Power Distribution ControllersFeatures• HOT SWAP Single Power Distribution Control (ISL6115 This family of fully featured hot swa ..
ISL6115CBZA , Power Distribution Controllers
IRF820
POWER MOSFET
1/8Aug 2000
IRF820N-CHANNEL 500V - 2.5Ω - 4A TO-220
PowerMesh™II MOSFET TYPICAL RDS(on) = 2.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
DESCRIPTIONThe PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns switching speed, gate
charge and ruggedness.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
(1)ISD ≤2.5A, di/dt ≤50A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
IRF820
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/8
IRF820
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area Thermal Impedence
IRF820
Static Drain-source On Resistance
Transfer CharacteristicsOutput Characteristics
Transconductance
5/8
IRF820
Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
