IRF7842TRPBF ,40V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications Synchronous MOSFET for NotebookV R maxQg (typ.)DSS DS(on)Processor Power Secondary S ..
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IRF7842TRPBF
40V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR. Rectifier
Applications
o Synchronous MOSFET for Notebook
Processor Power
o Secondary Synchronous Rectification
for Isolated DC-DC Converters
o Synchronous Fet for Non-Isolated
DC-DC Converters
o Lead-Free
Benefits
0 Very Low RDS(on) at 4.5V l/ss
. Low Gate Charge
q Fully Characterized Avalanche Voltage
and Current
|RF784'2PbF
HEXFET© Power MOSFET
Voss RDS(on) max Og (typ.)
40V 5.0mQ@VGs = 10V 33nC
S E1 5 D
s E11212 H 7:111 D
s E3 W E 6m] D
G Enj“ 5m D
Top View SO-8
Base Part Number Package Type Standard Pack . Orderable Part Number
Form Quantity
Tube/Bulk 95 IRF7842PbF
IRF7842PbF SO-8
Tape and Reel 4000 IRF7842TRPbF
Absolute Maximum Ratings
Parameter Max. Units
l/os Drain-to-Source Voltage 40 V
VGS Gate-to-Source Voltage * 20
ID @ T, = 25°C Continuous Drain Current, Vss @ 10V 18
ID © TA = 70°C Continuous Drain Current, Vss © 10V 14 A
IDM Pulsed Drain Current CO 140
PD @TA = 25°C Power Dissipation C9 2.5 W
PD ©T, = 70°C Power Dissipation © 1.6
Linear Derating Factor 0.02 WPC
TJ Operating Junction and -55 to + 150 "C
TSTS Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
Rar, Junction-to-Drain Lead © - 20 °C/W
ReJA Junction-to-Ambient COS - 50
Notes C) through s are on page 10
il wWW.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 8, 2014
ItCiii,
|RF784'2PbF
Static © T., = 25°C (unless otherwise specified)
Parameter Min. Typ. Man Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 40 - - V Vas = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.037 - V/°C Reference to 25°C, ID = 1mA
RDSmn) Static Drain-to-Source On-Resistance - 4.0 5.0 mf2 Vas = 10V, b = 17A (3)
- 4.7 5.9 Vas = 4.5V, ID = 14A <3)
Vesm.) Gate Threshold Voltage 1.35 - 2.25 V Vos = Vss, ID = 250pA
AVsso) Gate Threshold Voltage Coefficient - - 5.6 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 32V, Vas = 0V
- - 150 Vos = 32v, Vas = OV, T, = 125°C
lass Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
gfs Forward Transconductance 81 - - S Vos = 20V, ID = 14A
00 Total Gate Charge - 33 50
40w Pre-Vth Gate-to-Source Charge - 9.6 - VDs = 20V
_Qq§2 Post-Vth Gate-to-Source Charge - 2.8 - nC Vas = 4.5V
Qua Gate-to-Drain Charge - 10 - ID = 14A
Quodr Gate Charge Overdrive - 10.6 -
st Switch Charge (Q052 + qu) - 12.8 -
QOSS Output Charge - 18 - nC Vos = 16V, Vas = 0V
Rs Gate Resistance - 1.3 2.6 Q
Gon, Turn-On Delay Time - 14 - VDD = 20V, Vas = 4.5V <3)
t, RiseTime - 12 - ID =14A
tam) Turn-Off Delay Time - 21 - ns Clamped Inductive Load
t, Fall Time - 5.0 -
Ciss Input Capacitance - 4500 - Vas = 0V
Co Output Capacitance - 680 - pF Vos = 20V
Css Reverse Transfer Capacitance - 310 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
Eas Single Pulse Avalanche Energy (2) - 50 m]
|AR Avalanche Current (I) - 14 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 3.1 MOSFET symbol _.---,''
(Body Diode) A showing the / f 1 A
|SM Pulsed Source Current - - 140 integral reverse
(Body Diode) co p-njunction diode.
Vsn Diode Forward Voltage - - 1.0 V To = 25°C, IS = 14A, Vos = 0V (3)
trr Reverse Recovery Time - 99 150 ns TJ = 25°C, IF = 14A, Va, = 20V
o,, Reverse Recovery Charge - 11 17 nC di/dt = 100A/us (3.1
© 2014 International Rectifier Submit Datasheet Feedback July 8, 2014
