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IRF7491IORN/a1400avai80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7491IRN/a122avai80V Single N-Channel HEXFET Power MOSFET in a SO-8 package


IRF7491 ,80V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications V R max IDSS DS(on) D High frequency DC-DC convertersΩ80V 16m @V = 10V 9.7AGSBenefitsA ..
IRF7491 ,80V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD - 94537IRF7491®HEXFET Power MOSFET
IRF7491TRPBF ,80V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters80V 16m

IRF7491
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 94537
International
TOR Rectifier IIRF7491
HEXFET® Power MOSFET
Applications Voss RDS(on) max ID
0 Hi hf DC-DC rt
lg requency come ers 80V 16mg2@sz =10V 9.7A
Benefits
o Low Gate to Drain Charge to Reduce
Switching Losses
o Fully Characterized Capacitance Including
Effective Cogs to Simplify Design, (See
App. Note AN1001)
-sIrIn D
. Fully Characterized Avalanche Voltage
and Current Top View SO-8
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-to-Source Voltage 80 V
Ves Gate-to-Source Voltage i 20
ID @ TA = 25°C Continuous Drain Current, l/ss @ 10V 9.7©
ID @ TA = 100°C Continuous Drain Current, l/ss @ 10V 6.1 A
IDM Pulsed Drain Current co 77
PD @TA = 25°C Maximum Power Dissipation 2.5 W
Linear Derating Factor 0.02 WPC
dv/dt Peak Diode Recovery dv/dt © 4.4 V/ns
T: Operating Junction and -55 to + 150 ''C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
' Junction-to-Drain Lead - 20 °CNV
ReJA Junction-to-Ambient (PCB Mount) * -- 50
Notes O) through © are on page 8
1
08/30/02

IRF7491
International
TOR Rectifier
Static tii) To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(amoss Drain-to-Source Breakdown Voltage 80 - - V Vas = 0V, ID = 250uA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.08 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 14 16 m9 Vss = 10V, ID = 5.8A ©
VGS(lh) Gate Threshold Voltage 3.5 - 5.5 V Vos = Vas, b = 250pA
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 64V, Vss = 0V
- - 250 Vos = 64V, Vss = OV, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
Dynamic @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 9.6 - - S Vos = 25V, ID = 5.8A
q, Total Gate Charge - 51 76 ID = 5.8A
Qgs Gate-to-Source Charge - 18 - nC Vos = 40V
di Gate-to-Drain ("Miller") Charge - 18 - l/ss = 10V ©
td(on) Turn-On Delay Time -- 22 - VDD = 40V
t, Rise Time - 19 - ID = 5.8A
tum) Turn-Off Delay Time - 32 - ns Rs = 6.29
t, Fall Time -- 10 -- Vss = 10V co
Ciss Input Capacitance - 2940 - Vas = 0V
Coss Output Capacitance - 290 - Vos = 25V
Crss Reverse Transfer Capacitance --- 160 - pF f = 1.0MHz
Coss Output Capacitance - 980 - I/as = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 210 - Vss = 0V, Vos = 64V, f = 1.0MHz
Coss eff. Effective Output Capacitance -- 310 -- Vss = 0V, Vos = 0V to 64V ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy0)© - 130 mJ
IAR Avalanche Current C) - 5.8 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 9.7 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 77 integral reverse G
(Body Diode) Coco p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 5.8A, VGS = 0V ©
trr Reverse Recovery Time - 47 - ns Tu = 25°C, IF = 5.8A, VDD = 25V
G, Reverse Recovery Charge - 110 - nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2

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