IRF7471 ,40V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD- 94036BSMPS MOSFETIRF7471®
IRF7471 ,40V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications HEXFET Power MOSFETl High Frequency Isolated DC-DCV R max IDSS DS(on) D Converters w ..
IRF7471TRPBF ,40V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications High Frequency Isolated DC-DCHEXFET Power MOSFET Converters with Synchronous Rect ..
IRF7473 ,100V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D Telecom and Data-Com 24 and 48V input DC-DC converters 100V ..
IRF7473TR ,100V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D Telecom and Data-Com 24 and 48V input DC-DC converters 100V ..
IRF7473TRPBF ,100V Single N-Channel HEXFET Power MOSFET in a SO-8 packageIRF7473PbFHEXFET Power MOSFET
ISL32175EIVZ , QUAD, ±16.5kV ESD Protected, 3.0V to 5.5V, RS-485/RS-422 Receivers
ISL32175EIVZ , QUAD, ±16.5kV ESD Protected, 3.0V to 5.5V, RS-485/RS-422 Receivers
ISL3283EIHZ-T , ±16.5kV ESD Protected, 125°C, 3.0V to 5.5V, SOT-23/TDFN Packaged, 20Mbps, Full Fail-safe, Low Power, RS-485/RS-422 Receivers
ISL34340 ,WSVGA 24-Bit Long-Reach Video SERDES with Bidirectional Side-ChannelBlock DiagramSCL2I CSDAVCMGENERATORRAM SERIOPPRE-TXEMPHASIS3V/H/DESERIONMUXTDM 8b/10bDEMUXRGB24RX E ..
ISL35411DRZ-T7 , Quad Driver
ISL36411DRZ-T7 , Quad Lane Extender
IRF7471
40V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD- 94036B
International
TOR liUctifier SMPS MOSFET IRF7471
Applications HEXFET© Power MOSFET
o Hi h Fre uenc Isolated DC-DC
Cfnverteqrs witrzl Synchronous Rectification Voss RDSion) max ID
for Telecom and Industrial Use 40V 13mf2 10A
. High Frequency Buck Converters for
Computer Processor Power
Benefits
0 Ultra-Low Gate Impedance s D11 , ”311D
0 Very Low RDS(on) S ED:2 _ 7:11 D "% ". f.
0 Fully Characterized Avalanche Voltage s mf tf 6:1: D Qrfff/
and Current _
G DI“ 5:1: D
Top View SO-8
Absolute Maximum Ratings
Symbol Parameter Max. Units
VDs Drain-Source Voltage 40 V
VGS Gate-to-Source Voltage 1 20 V
In @ TA = 25°C Continuous Drain Current, VGS @ 10V 10
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 8.3 A
IDM Pulsed Drain Current(0 83
Pro @TA = 25°C Maximum Power Dissipation© 2.5 W
PD @TA = 70°C Maximum Power Dissipation© 1.6 W
Linear Derating Factor 0.02 mW/°C
T J , TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Symbol Parameter Typ. Max. Units
' Junction-to-Drain Lead - 20
RQJA Junction-to-Ambient © - 50 "C/W
Notes co through © are on page 8
1
3/25/01
IRF7471 International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.043 - V/°C Reference to 25°C, ID = 1mA
. . . - 9.5 13 I/cs =10V,ID = 10A ©
RDS(on) Static Drain-to-Source On-Resistance - 12 16 mn VGS = 4.5V, ID = 8.0 A ©
Vesah) Gate Threshold Voltage 1.0 - 3.0 V Vos = VGs, ID = 250pA
loss Drain-to-Source Leakage Current - - 20 pA Vos = 32V, Vss = 0V
- - 100 Vros = 32V, VGS = 0V, T: = 125°C
less Gate-to-Source Forward Leakage - - 200 n A VGs = 16V
Gate-to-Source Reverse Leakage - - -200 VGs = -16V
Dynamic @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 22 - - S VDs = 20V, ID = 8.0A
% Total Gate Charge - 21 32 ID = 8.0A
Qgs Gate-to-Source Charge - 7.2 11 n0 VDS = 20V
di Gate-to-Drain ("Miller") Charge - 8.2 12 V05 = 4.5V ©
Qoss Output Gate Charge - 23 35 V93 = 0V, Vos = 16V
lawn) Turn-On Delay Time - 12 - VDD = 20V
t, Rise Time - 2.7 - ns lo = 8.0A
tu(oit) Turn-Off Delay Time - 15 - Rs = 1.89
tr Fall Time - 4.1 - VGS = 4.5V ©
Ciss Input Capacitance - 2820 - VGs = 0V
Coss Output Capacitance - 700 - Vos = 20V
Crss Reverse Transfer Capacitance - 46 - pF f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 300 m]
IAR Avalanche Currenk0 - 8.0 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 2.3 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C) - - 83 p-n junction diode. s
VSD Diode Forward Voltage - 0.80 1.3 V To = 2500 ls = 8.OA, VGS = 0V ©
- 0.65 - To = 125°C, ls = 8.0A, VGS = 0V
trr Reverse Recovery Time - 69 100 ns To = 25°C, IF = 8.0A, VR-- 20V
Qrr Reverse Recovery Charge - 130 200 nC di/dt = 1OOA/ps ©
trr Reverse Recovery Time - 73 110 ns T: = 125°C, IF = 8.0A, VR=20V
Qrr Reverse Recovery Charge - 160 240 nC di/dt = 100A/ps ©
2
