IC Phoenix
 
Home ›  II27 > IRF7459-IRF7459TR,20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7459-IRF7459TR Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
IRF7459IRN/a505avai20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7459TRIRN/a1105avai20V Single N-Channel HEXFET Power MOSFET in a SO-8 package


IRF7459TR ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications HEXFET Power MOSFETl High Frequency DC-DC IsolatedV R max IDSS DS(on) D ..
IRF7460 ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD - 93886DIRF7460SMPS MOSFET®HEXFET Power MOSFET
IRF7460TR ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max(mΩ) Ω) Ω) Ω) Ω) IDSS DS(on) Dl High Frequency Isolated DC-DC20V 10@V = 10V 12A ..
IRF7460TRPBF ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications High Frequency Isolated DC-DCV R max(m IDSS DS(on) D Converters with Synchronous ..
IRF7463 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsHEXFET Power MOSFET High Frequency DC-DC Isolated Converters with Synchronous Re ..
IRF7463TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsHEXFET Power MOSFET High Frequency DC-DC Isolated Converters with Synchronous Re ..
ISL3092IR-TK , 11GHz VCO
ISL3092IR-TK , 11GHz VCO
ISL3092IR-TK , 11GHz VCO
ISL31498EIUZ , ±60V Fault Protected, 5V, RS-485/RS-422 Transceivers with ±25V Common Mode Range
ISL3152EIBZ , ±16.5kV ESD (IEC61000-4-2) Protected, Large Output Swing, 5V, Full Fail-Safe, 1/8 Unit Load, RS-485/RS-422 Transceivers
ISL3152EIBZ , ±16.5kV ESD (IEC61000-4-2) Protected, Large Output Swing, 5V, Full Fail-Safe, 1/8 Unit Load, RS-485/RS-422 Transceivers


IRF7459-IRF7459TR
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
Applications
o High Frequency DC-DC Isolated
SMPS MOSFET
PD- 93885B
IRF7459
HEXFET0 Power MOSFET
. . . V R m x
Converters with Synchronous Rectification DSS DS(on) a ID
for Telecom and Industrial use 20V 9.0mQ 12A
o High Frequency Buck Converters for
Computer Processor Power
Benefits
o Ultra-Low Gate Impedance s m D
0 Very Low RDS(on) at 4.5V VGS S EIUZ W: EDD J" . ". '
o Fully Characterized Avalanche Voltage s ma l m D "rilsv''
and Current G m4 mm D
Top View
Absolute Maximum Ratings
Symbol Parameter Max. Units
Vros Drain-Source Voltage 20 V
VGs Gate-to-Source Voltage i 12 V
ID @ TA = 25°C Continuous Drain Current, I/ss @ 10V 12
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 10 A
IDM Pulsed Drain Current0) 100
Pro @TA = 25°C Maximum Power Dissipation® 2.5 W
Pro @TA = 70°C Maximum Power Dissipation© 1.6 W
Linear Derating Factor 0.02 W/°C
T J , TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Symbol Parameter Typ. Max. Units
Ron, Junction-to-Drain Lead - 20
RNA Junction-to-Ambient © - 50 °C/W
Notes co through (D are on page 8
1

3/25/01
IRF7459
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bmoss Drain-to-Source Breakdown Voltage 20 - - V VGs = 0V, lo = 250pA
AV(sRVss/ATo Breakdown Voltage Temp. Coemcient - 0.024 - V/°C Reference to 25''C, ID = 1mA
- 6.7 9.0 N/ss = 10V, ID = 12A ©
RDS(on) Static Drain-to-Source On-Resistance - 8.0 11 mn VGs = 4.5V, ID = 9.6A ©
- 11 22 V33 = 2.8V, ID = 6.0A ©
VGS(th) Gate Threshold Voltage 0.6 - 2.0 V Vros = VGS, ID = 250pA
bss Drain-to-Source Leakage Current : : 12000 pA VS: , 12x V: , g, TJ = 125°C
less Gate-to-Source Forward Leakage - - 200 n A N/ss = 12V
Gate-to-Source Reverse Leakage - - -200 VGS = -12V
Dynamic @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
9ts Forward Transconductance 32 - - S Vos = 16V, ID = 9.6A
% Total Gate Charge - 23 35 lo = 9.6A
Qgs Gate-to-Source Charge - 6.6 10 nC Vros = 10V
qu Gate-to-Drain ("Miller") Charge - 6.3 9.5 N/ss = 4.5V ©
Qoss Output Gate Charge - 17 26 Vss = 0V, Vos = 10V
td(on) Turn-On Delay Time - 10 - VDD = 10V,
tr Rise Time - 4.5 - ns ID = 9.6A
td(off) Turn-Off Delay Time - 20 - Rs = 1.89
tf Fall Time - 5.0 - Vss = 4.5V ©
Ciss Input Capacitance - 2480 - N/ss = 0V
Cass Output Capacitance - 1030 - Vos = 10V
Crss Reverse Transfer Capacitance - 130 - pF f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 290 ml
IAR Avalanche CurrentC0 - 12 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 2.5 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 100 integral reverse G
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - 0.84 1.3 V T: = 25°C, Is = 9.6A, Vss = 0V ©
- 0.69 - TJ = 125°C, ls = 9.6A, Was = 0V
trr Reverse Recovery Time - 70 105 ns TJ = 25°C, IF = 9.6A, VR= 15V
Qrr Reverse Recovery Charge - 70 105 nC di/dt = 100A/ps ©
trr Reverse Recovery Time - 70 105 ns TJ = 125''C, IF = 9.6A, VR=15V
Qrr Reverse Recovery Charge - 75 113 nC di/dt = 100A/ps ©
2

ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED