IRF7455TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications
. High Frequency DC-DC Converters
with Synchronous Rectification
Benefits
0 ..
IRF7456 ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D High Frequency DC-DC Converters 20V 0.0065Ω 16A with Synchr ..
IRF7456PBF , SMPS MOSFET
IRF7456TR ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D High Frequency DC-DC Converters 20V 0.0065Ω 16A with Synchr ..
IRF7456TRPBF ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D High Frequency DC-DC Converters 20V 0.0065Ω 16A with Synchr ..
IRF7457 ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD- 93882DIRF7457SMPS MOSFET®HEXFET Power MOSFET
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IRF7455TRPBF
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 95461
International
Tart, Rectifier IRF7455PbF
SMPS MOSFET
HEXFET8 Power MOSFET
Applications V R max I
q High Frequency DC-DC Converters 33:5 03(3):; - DA
with Synchronous Rectification . SQ 15
. Lead-Free
Benefits
0 Ultra-Low Fusion) at 4.5V VGS
. Low Charge and Low Gate Impedance to
. . s [IE :L: 0
Reduce Switching Losses 2 ,
. s m: 4; :33 D
q Fully Characterized Avalanche Voltage _ r
J F---- 5
and Current s GI "alc C)
G ar-' 5T: D
Top View SO-8
Absolute Maximum Ratings
Symbol Parameter Max. Units
Vos Drain-Source Voltage 30 V
VGs Gate-to-Source Voltage t 12 V
In © TA = 25°C Continuous Drain Current, Vos © 10V 15
ID © TA = 70°C Continuous Drain Current, Vtss © 10V 12 A
los, Pulsed Drain CurrentCD 120
Po @TA = 25°C Maximum Power Dissipation© 2.5 W
Po @TA = 70°C Maximum Power Dissipation© 1.6
Linear Derating Factor 0.02 W/“C
To, TSTG Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance
Parameter Max. Units
Re“ Maximum Junction-to-Ambient) 50 "C/W
Typical SMPS Topologies
q Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers
Notes C) through (D are on page 8
1
6/29/04
IRF7455PbF International
TOR Rectifier
Static © TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - -- V Vss = OV, ID = 250pA
AVmRJDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.029 -- V/"C Reference to 2530. ID = 1mA
- 0.00600.0075 ft Vcs = 10V, ID = 15A @
Rosmn) Static Drain-to-Source On-Resistance - 0.0069 0009 Vss = 4.5V, ID = 12A ©
- 0.010 0.020 V65 = 2.8V. ID = 3.5A Ca)
Vegan) Gate Threshold Voltage 0.6 -- 2.0 V VDS = Vos, ID = 250pA
bss Drain-to-Source Leakage Current _ - 12:0 PA :3: . 22x :2: . g, To = 125°C
ksss Gate-to-Source Forward Leakage -- - 200 nA VGS = 12V
Gate-to-Source Reverse Leakage - - -200 l/iss = -12V
Dynamic © TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Ts Forward Transconductance 44 - - S Vos = 10V, ID = 15A
as, Total Gate Charge - 37 56 ID = 15A
095 Gate-to-Source Charge - 8.9 13 n0 Vros = 24V
di Gate-to-Drain (''Miller") Charge - 13 20 V65 = 5.0V, Cat,
tum) Turn-On Delay Time - 17 - VDD = 15V
t, Rise Time - 18 - ns lo = 1.0A
lawn) Tum-Off Delay Time - 51 - HG = 6.0ft
it Fall Time - 44 - Vss = 4.5V C9
C.SS Input Capacitance - 3480 - VGS = 0V
Coss Output Capacitance - 870 - Vos = 25V
Crss Reverse Transfer Capacitance - 100 - pF f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 200 mJ
Im Avalanche Current© - 15 A
EAR Repetitive Avalanche Energy(0 - 0.25 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ _ 2 5 MOSFET symbol
(Body Diode) A showing the
ISM Pulsed Source Current _ _ 120 integral reverse 'L,
(Body Diode) (D p-n junction diode. r
I/so Diode Forward Voltage - - 1.2 V Tu = 25'C, Is = 2.5A, I/ss = 0V 0)
trr Reverse Recovery Time - 64 96 ns TJ = 25'C, I; = 2.5A
On Reverse RecoveryCharge - 99 150 nC di/dt = 1OOA/ps (CI)
2 -
