IRF7451 ,150V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD- 93898AIRF7451SMPS MOSFET®HEXFET Power MOSFET
IRF7451 ,150V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters 150V 0.09Ω Ω Ω Ω Ω 3.6ABenefitsl ..
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IRF7451
150V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD- 93898A
nternaticnal
I e IRF7451
TOR Rechfler SMPS MOSFET
HEXFET® Power MOSFET
Applications Voss RDS(on) max ID
0 High frequency DC-DC converters 150V 0.0N2 3.6A
Benefits
o Low Gate to Drain Charge to Reduce
Switching Losses s 31‘ ' ”3110
0 Fully Characterized Capacitance Including S 3:2 7:1: D T b': '
Effective Coss to Simplify Design, (See
s 13:3 LIE] D
App. Note AN1001)
o Fully Characterized Avalanche Voltage G DI 5333 D
and urrent ' -
C Top View so 8
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 3.6
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 2.9 A
IDM Pulsed Drain Current C) 29
Po @TA = 25°C Power Dissipation© 2.5 W
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage * 30 V
dv/dt Peak Diode Recovery dv/dt © 7.9 V/ns
Tu Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Symbol Parameter Typ. Max. Units
' Junction-to-Drain Lead - 20
RQJA Junction-to-Ambient © - 50 ''C/W
Notes co through © are on page 8
1
01/31/01
IRF7451 International
TOR Rectifier
Static @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)ross Drain-to-Source Breakdown Voltage 150 - - V VGS = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.19 - Vl°C Reference to 25°C. ID = 1mA Cr)
RDS(on) Static Drain-to-Source On-Resistance - - 0.09 n VGS = 10V, ID = 2.2A G)
VGS(th) Gate Threshold Voltage 3.0 - 5.5 V VDs = VGs, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 pA VDS = 150V, VGS = 0V
- - 250 VDs = 120V, VGs = 0V, TJ = 150°C
I Gate-to-Source Forward Leakage - - 100 nA VGS = 30V
GSS Gate-to-Source Reverse Leakage - - -100 I/cs = -30V
Dynamic @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Ts Forward Transconductance 3.5 - - S VDs = 25V, ID = 2.2A
% Total Gate Charge - 28 41 ID = 2.2A
Q95 Gate-to-Source Charge - 6.8 10 nC Vos = 120V
di Gate-to-Drain ("Miller") Charge - 13 20 V65 = 10V C9
tdmn) Turn-On Delay Time - 10 - N/oo = 75V
tr Rise Time - 4.2 - ns ID = 2.2A
tam) Turn-Off Delay Time - 17 - Rs = 6.59
" Fall Time - 15 - VGS = 10V Cr)
Ciss Input Capacitance - 990 - Ves = 0V
Coss Output Capacitance - 220 - Vos = 25V
Crss Reverse Transfer Capacitance - 42 - pF f = 1.0MHz
Coss Output Capacitance - 1260 - VGs = 0V, Vros = 1.0V, f = 1.0MHz
Coss Output Capacitance - 100 - VGS = 0V, Vros = 120V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 180 - VGS = 0V, I/rs = 0V to 120V ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 210 ml
IAR Avalanche CurrentC0 - 3.6 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - _ 2 3 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - - 29 integral reverse G
(Body Diode) C) p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 2.2A, VGS = 0V Ci)
trr Reverse Recovery Time - 76 110 ns TJ = 25°C, IF = 2.2A
Gr Reverse RecoveryCharge - 270 400 nC di/dt = 100/Ups 3)
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