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IRF7433TRPBFIRN/a12234avai-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package


IRF7433TRPBF ,-12V Single P-Channel HEXFET Power MOSFET in a SO-8 packagePD - 95305IRF7433PbF®HEXFET Power MOSFET Ultra Low On-ResistanceV R max IDSS DS(on) D P-Channel M ..
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IRF7433TRPBF
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package
PD - 95305
International
TOR Rectifier llRF7433PbF
HEXFET6 Power MOSFET
Ultra Low On-Resistance
V R max I
P-Channel MOSFET DSS DS(on) D
Surface Mount -12V 24mQ@Vtss = -4-5V -8.7A
Available in Tape & Reel 30mQ@1/ss = -2.5V -7.4A
Lead-Free 46mQ@VGs = -1.8V -6.3A
Description
These P-Channel MOSFETs from International sum BED
Reetifier utilize advanced proceseing techniques to SUEZ 7 D
achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an S LIL]
extremely efficient device for use in battery and load 4
management applications.. G CTE] LIL]
The SO-8 has been modified through a customized Top View SO-8
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-Source Voltage -12 V
In @ TA = 25°C Continuous Drain Current, Vas @ -4.5V -8.9
In @ TA = 70°C Continuous Drain Current, Vas @ -4.5V -7.1 A
IDM Pulsed Drain Currenk0 -36
PD @TA = 25°C Maximum Power Dissipation© 2.5 W
PD @TA = 70°C Maximum Power Dissipation© 1.6 W
Linear Derating Factor 0.02 W/°C
Vas Gate-to-Source Voltage t8 V
TJ , Tsms Junction and Storage Temperature Range -55 to +150 ''C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient 50 °C/W
1
10/12/04

IRF7433PbF International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bgmss Drain-to-Source Breakdown Voltage -12 - - V l/ss = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.007 - V/°C Reference to 25°C, ID = -1mA
R030”) Static Drain-to-Source On-Resistance - - 24 VGS = M.5V, ID = -8.7A ©
- - 30 m9 Vas = -2.5V, ID = -7.4A ©
- - 46 Vas = -1.8V, ID = -6.3A ©
VGS(th) Gate Threshold Voltage -O.4 - -0.9 V Vros = I/ss, ID = -250pA
gfs Forward Transconductance 22 - - S Vos = -10V, ID = -8.7A
bss Drain-to-Source Leakage Current - - -1.0 p A Vos = -9.6V, Vss = 0V
- - -25 Vos = -9.6V, Vss = 0V, T, = 70°C
less Gate-to-Source Forward Leakage - - -100 n A Vss = -8V
Gate-to-Source Reverse Leakage - - 100 Vss = 8V
% Total Gate Charge - 20 - ID = -8.7A
Q95 Gate-to-Source Charge - 4.5 - nC Vos = -6V
di Gate-to-Drain ("Miller") Charge - 4.0 - VGs = -4.5V co
tdmn) Turn-On Delay Time - 8.8 13 ns VDD = -6V, Vas = -4.5V
t, Rise Time - 8.2 12 lo = -1.0A
td(0ff) Turn-Off Delay Time - 272 408 RD = 69
tf Fall Time - 175 263 Rs = 69 ©
Ciss Input Capacitance -- 1877 -- Viss = 0V
Coss Output Capacitance - 512 - pF Vos = -10V
Crss Reverse Transfer Capacitance - 310 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.5 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) (D - - -36 p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 V Tu = 25°C, Is = -2.5A, VGS = 0V ©
trr Reverse Recovery Time - 36 54 ns To = 25°C, IF = -2.5A
er Reverse Recovery Charge - 28 42 nC di/dt = -100A/ps ©
Notes:
co Repetitive rating; pulse width limited by (3 When mounted on 1 inch square copper board, t < 10 sec.
max. junction temperature.
© Pulse width S 400ps; duty cycle S 2%.
2

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