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IRF7424IORN/a172avai-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
IRF7424TRIRN/a500avai-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
IRF7424TRIORN/a329avai-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package


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IRF7424-IRF7424TR
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
PD- 94024A
International
TOR Rectifier IRF7424
HEXFET© Power MOSFET
0 Ultra Low On-Resistance VDss RDS(on) max (mn) k,
. 'st2glti2es"T -3ov 13.5@VGS = -10V -11A
. Available in Tape & Reel 22@VGS 4.5V 8.8A
Description s D111 In, D
These P-Channel MOSFETs from International 2 7
Rectifier utilize advanced processing techniques to S DI] 'a [:[DD
achieve the extremely low on-resistance per silicon s D113 (ll s D
area. This benefit provides the designer with an DD
extremely efficient device for use in battery and load G EDI4 5E1]: D
management applications..
. . Top View SO-8
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. I/While, improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain- Source Voltage -30 V
ID @ TA = 25''C Continuous Drain Current, Ves @ -10V -11
ID @ TA-- 70°C Continuous Drain Current, Ves @ -10V -9.3 A
IDM Pulsed Drain Current co -47
Po @TA = 25°C Power Dissipation © 2.5 W
Po @TA = 70''C Power Dissipation © 1.6
Linear Derating Factor 20 mW/°C
Vss Gate-to-Source Voltage i 20 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient® 50 ''C/W
1
3/29/01

IRF7424 International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 - - V VGS = 0V, ID = -250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.019 - V/°C Reference to 25°C, ID = -1mA
. . . - - 13.5 VGs=-1OV, ID=-11A©
R Static Drain-to-Source On-Resistance
DS(on) - - 22 mn VGS = -4.5V, ID = -8.8A ©
Vegan) Gate Threshold Voltage -1.0 - -2.5 V Vos = l/cs, ID = -250pA
gfs Forward Transconductance 17 - - S Vos = -10V, ID = -11A
loss Drain-to-Source Leakage Current - - -15 pA Vros = -24V, VGS = 0V
- - -25 Ws = -24V, Vss = 0V, To = 70°C
I Gate-to-Source Forward Leakage - - -100 n A VGS = -20V
GSS Gate-to-Source Reverse Leakage - - 100 VGs = 20V
% Total Gate Charge - 75 110 ID = -1 1A
ths Gate-to-Source Charge - 14 21 n0 Vos = -15V
di Gate-to-Drain ("Miller") Charge - 12 18 Vss = -10V
tdmn) Turn-On Delay Time - 15 - VDD = -15V ©
tr Rise Time - 23 - ns ID = -1.0A
tam) Turn-Off Delay Time - 150 - Rs = 6.09
tt Fall Time - 76 - I/ss = -10V
Ciss Input Capacitance - 4030 - VGs = 0V
Cass Output Capacitance - 580 - pF VDS = -25V
Crss Reverse Transfer Capacitance - 410 - f = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 2 5 MOSFET symbol D
(Body Diode) - - - . A showing the
ISM Pulsed Source Current -47 integral reverse G
(Body Diode) C) - - p-n junction diode. S
VSD Diode Forward Voltage - - -1.2 V To = 25°C, Is = -2.5A, N/ss = 0V ©
tn Reverse Recovery Time - 40 60 ns To = 25°C, IF = -2.5A
Qrr Reverse Recovery Charge - 47 71 nC di/dt = -100A/ps ©
Notes:
(O Repetitive rating; pulse width limited by © Surface mounted on 1 in square Cu board
max. junction temperature.
© Pulse width S 400ps; duty cycle f 2%.
2

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