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IRF7413A-IRF7413ATR
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
Titat, Rectifier
Generation V Technology
Ultra Low On-Resistance
N-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designerwith an extremely efficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
PRELIMINARY
PD-9.1613A
IRF7413A
HEXFET® Power MOSFET
VDSS = 30V
RDS(on) = 0.01359
multiple-die capability making it ideal in a variety of power S0-8
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGs @ 10V 12
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 8.4
IDM Pulsed Drain Current C) 58 A
PD @TA = 25°C Power Dissipation 2.5 W
Linear Derating Factor 0.02 mW/°C
N/ss Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy© 260 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ,TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance Ratings
Parameter Typ. Max. Units
ReJA Maximum Junction-to-Ambient© - 50 ''C/W
8/25/97
IRF7413A International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefhcient - 0.034 - V/°C Reference to 25°C, ID = 1mAS
RDSM) Static Drain-to-Source On-Resistance : : Ill] (35 n V2: =" e)) ll,",----),'.),'):,
VGS(th) Gate Threshold Voltage 1.0 - - V VDS = VGs, b = 250pA
gfs Forward Transconductance 10 - - S Ws = 10V, ID = 3.7AS
loss Drain-to-Source Leakage Current - - 1.0 pA Ws = 24V, VGS = 0V
- - 25 V93 = 24V, VGs = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - -100 n A I/ss = -20V
Gate-to-Source Reverse Leakage - - 100 l/ss = 20V
09 Total Gate Charge - 52 79 ID = 7.3A
Qgs Gate-to-Source Charge - 6.1 9.2 nC l/os = 24V
di Gate-to-Drain ("Miller") Charge - 16 23 VGS = 10 V, See Fig. 6 and 9 @(5)
td(on) Turn-On Delay Time - 8.6 - VDD = 15V
tr Rise Time - 50 - ID = 7.3A
mom Turn-Off Delay Time - 52 - ns Rs = 6.29
tf Fall Time - 46 - RD = 2.09, See Fig. 10 COG)
Ciss Input Capacitance - 1800 - VGs = 0V
Cogs Output Capacitance - 680 - pF I/rss = 25V
Crss Reverse Transfer Capacitance - 240 - f = 1.0MHz, See Fig. 56)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current ' - - 3.1 MOSFET symbol D
(Body Diode) . A showing the Lt
ISM Pulsed Source Current ' - - 58 integral reverse G (tLl
(Body Diode) co p-n junction diode. s
l/so Diode Forward Voltage - - 1.0 V TJ = 25°C, Is = 6.6A, I/ss = 0V ©
trr Reverse Recovery Time - 74 110 ns TJ = 25°C, IF = 7.3A
G, Reverse RecoveryCharge - 200 300 nC di/dt = 100A/ps as
Notes:
co Repetitive rating; pulse width limited by © Pulse width S 300ps; duty cycles 2%.
max. junction temperature. ( See fig. 11 )
© Starting To = 25°C, L =9.8mH
RG = 25:2, lAs =7.3A. (See Figure 12)
© la, f 7.3A, di/dt s 100A/ps, vDD s V(BR)DSS,
T J s: 150°C
s Use IRF7413 data and test conditions
© Surface mounted on FR-4 board, t s 10sec.
