IC Phoenix
 
Home ›  II27 > IRF7413-IRF7413TR-IRF7413-TR,30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7413-IRF7413TR-IRF7413-TR Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
IRF7413IRN/a14837avai30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7413TRIORN/a16696avai30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7413TRN/a2460avai30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7413TRIRN/a35418avai30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7413TRIR ?N/a4000avai30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7413-TR |IRF7413TRIORN/a2054avai30V Single N-Channel HEXFET Power MOSFET in a SO-8 package


IRF7413TR ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 package       AA1 8     S D   ..
IRF7413TR ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 package       AA1 8     S D   ..
IRF7413TR ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 package       AA1 8     S D   ..
IRF7413TR ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 package       AA1 8     S D   ..
IRF7413-TR ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 package       AA1 8     S D   ..
IRF7413TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 package            AA1 8   ..
ISL24006IRZ-T7 , 14-Channel Programmable Switchable I2C TFT-LCD Reference Voltage Generator with Integrated 4-Channel Static Gamma Drivers
ISL28114FHZ-T7A , Single, Dual, Quad General Purpose Micropower, RRIO Operational Amplifiers
ISL28146 ,5MHz, Single Rail-to-Rail Input-Output (RRIO) Op Ampsfeatures an enable pin that can be used to turn the device off and reduce the supply • Low-end audi ..
ISL28166 ,39礎 Micropower Single and Dual Rail-to-Rail Input-Output Low Input Bias Current (RRIO) Op AmpsApplicationsoutput operation is rail-to-rail.• Battery- or solar-powered systemsThe 1/f corner of t ..
ISL28168 ,34礎 Micro-power Single Rail-to-Rail Input-Output (RRIO) Low Input Bias Current Op AmpsFeaturesRail-to-Rail Input-Output (RRIO) Low Input • 34µA typical supply currentBias Current Op Amp ..
ISL28273FAZ , Dual and Quad Channel Micropower, Single Supply, Rail-to-Rail Input and Output (RRIO) Instrumentation Amplifiers


IRF7413-IRF7413TR-IRF7413-TR
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
:rciRRectifier
Generation VTechnology
Ultra Low On-Resistance
N-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
100% Re Tested
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance persilicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, providesthe designerwith an extremely efficient
and reliable device for use in a widevariety ofapplications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, orwave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
Absolute Maximum Ratings
PD - 913301
|RF7413
HEXFET© Power MOSFET
3130 VDSS = 30V
RDS(0n) = 0.0119.
Top View

Symbol Parameter Max Units
Vrss Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage * 20
ID @ TA = 25°C Continuous Drain Current, Ves @ 10V 13
ID © TA = 70°C Continuous Drain Current, I/ss @ 10V 9.2 A
|DM Pulsed Drain Current co 58
PD @TA = 25°C Power Dissipation 2.5 W
Linear Derating Factor 0.02 mW/°C
EAS Single Pulse Avalanche Energency © 260 md
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
T J, TSTG Junction and Storage Temperature Range -55 to +150 ''C
Thermal Resistance Ratings
Symbol Parameter Typ Max Units
RUJL Junction-to-Drain Lead © - 20 °C/W
RoJA Junction-to-Ambient so) - 50
02/14/07
|RF7413
International
TOR Rectifier
Electrical Characteristics © Td = 25°C (unless otherwise specified)
Symbol Parameter Min Typ Max Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, ID = 250PA
AV(BFK)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.034 - V/°C Reference to 25°C, ID = 1mA
Rosmn) Static Drain-to-Source On-Resistance - - 0.011 Q Vss = lov, ID = 7.3A ©
- - 0.018 Vss = 4.5V, ID = 3.7A ©
VGS(th) Gate Threshold Voltage 1.0 - 3.0 V Vos = Vss, ID = 250PA
91s Forward Transconductance 10 - - S Vos = 10V, ID = 3.7A
I Drain-to-So rce Leaka e C rrent - - 12 A Vos = 30V, l/ss = 0V
DSS I u g u - - 25 p l/rss = 24V, l/ss = OV, T, = 125°C
Gate-to-Source Forward Leakage - - -100 l/as = -20V
lass Gate-to-Source Reverse Leakage - - 100 nA Vas = 20V
q, Total Gate Charge - 52 79 b = 7.3A
Qgs Gate-to-Source Charge - 6.1 9.2 1/ros = 24V
di Gate-to-Drain ("Miller") Charge 16 23 nC l/es = 10V, See Fig. 6 and 9 ©
Re Gate Resistance 1.2 - 3.7
tum) Turn-On Delay Time - 8.6 - VDD = 15V
t, Rise Time - 50 - ID = 7.3A
td(0ff) Turn-Off Delay Time - 52 - ns Rs = 6.2 Q
t: Fall Time - 46 - Rs = 2.09, See Fig. 10 ©
Ciss Input Capacitance - 1800 - Ves = 0V
Coss Output Capacitance - 680 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 240 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
Is Continuous Source Current - - 3.1 MOSFET symbol /; D
(Body Diode) A showing the 2:
ISM Pulsed Source Current -- -- 58 integral reverse 8%
(Body Diode) CD p-n junction diode. R
VSD Diode Forward Voltage - - 1.0 V TJ = 25°C, IS = 7.3A, VGS = 0V ©
trr Reverse Recovery Time - 74 110 ns To = 25°C, IF = 7.3A
Qrr Reverse Recovery Charge - 200 300 nC di/dt = 100A/ps OD
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Q) Starting T: = 25°C, L =9.8mH
RG = 259, IAS =7.3A. (See Figure 12)

C3) Iso 5 7.3A, di/di<-:100A/ps, VDD S V(BR)DSS,
T JS 150°C
© Pulse width S 300ps; duty cycle 5 2%.
s Surface mounted on FR-4 board
© Re is measured at Tu approximately 90°C
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED