IRF7410TRPBF ,-12V Single P-Channel HEXFET Power MOSFET in a SO-8 packageapplications. With these improvements, multipledevices can be used in an application with dramatic ..
IRF7413 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 package AA1 8 S D ..
IRF7413A ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD - 9.1613AIRF7413APRELIMINARY®HEXFET Power MOSFETAl Generation V TechnologyA1 8S Dl Ultra Low On- ..
IRF7413ATR ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.The SO-8 has been modified through a customizedleadframe for enhanced thermal characte ..
IRF7413Q ,30V Single N-Channel HEXFET Power MOSFET in a Lead-Free SO-8 packageapplications. This surface mount SO-8 can dramaticallyreduce board space and is also available in ..
IRF7413QPBF ,30V Single N-Channel HEXFET Power MOSFET in a Lead-Free SO-8 package Advanced Process TechnologyAA Ultra Low On-Res ..
ISL23711UIU10Z , Terminal Voltage - 3V or - 5V, 128 Taps IC Serial Interface
ISL24003IRZ , Multi-Channel Buffers Plus VCOM Driver
ISL24006IRZ-T7 , 14-Channel Programmable Switchable I2C TFT-LCD Reference Voltage Generator with Integrated 4-Channel Static Gamma Drivers
ISL28114FHZ-T7A , Single, Dual, Quad General Purpose Micropower, RRIO Operational Amplifiers
ISL28146 ,5MHz, Single Rail-to-Rail Input-Output (RRIO) Op Ampsfeatures an enable pin that can be used to turn the device off and reduce the supply • Low-end audi ..
ISL28166 ,39礎 Micropower Single and Dual Rail-to-Rail Input-Output Low Input Bias Current (RRIO) Op AmpsApplicationsoutput operation is rail-to-rail.• Battery- or solar-powered systemsThe 1/f corner of t ..
IRF7410TRPBF
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package
International
:raRlectifier
PD - 96028B
IRF7410PbF
HEXFET© Power MOSFET
q Ultra Low On-Resistance V R
. P-Channel MOSFET 1°35 7ng3") _ 4 5V 16DA
0 Surface Mount GS - . -
0 Available in Tape & Reel 9mQ@VGS = -2.51/ -13.6A
. Lead-Free 13mQ@VGS = -1.81/ -11.5A
Description
These P-Channel HEXFET6 Power MOSFETs from 1 a
. . . . . . s [ED - D
International Rectifier utilize advanced processmg CED
techniques to achieve the extremely low on-resistance s 51312 _ 'e,, D
per silicon area. This benefit provides the designer 3 (tf 6
with an extremely efficient device for use in battery s CIE] [LIE] D
and load management applications.. G D314 In, D
The SO-8 has been modified through a customized . SO-8
leadframe for enhanced thermal characteristics and Top View
multiple-die capability making it ideal in a variety of
powerapplications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain- Source Voltage -12 V
ID @ TA = 25°C Continuous Drain Current, l/ss @ -4.5V -16
ID @ TA-- 70°C Continuous Drain Current, Ves © -4.5V -13 A
IDM Pulsed Drain Current (D -65
PD @TA = 25°C Power Dissipation © 2.5 W
Po @TA = 70°C Power Dissipation © 1.6
Linear Derating Factor 20 mW/°C
Vss Gate-to-Source Voltage t-8 V
To, TSTG Junction and Storage Temperature Range -55 to +150 ''C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient® 50 °C/W
1
1 1/17/08
|RF7410PbF
International
TOR Rectifier
Electrical Characteristics © TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -12 - - V Ves = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.006 - V/°C Reference to 25°C, ID = -1mA
- - 7 Vss = -4.5V, ID = -16A ©
RDS(on) Static Drain-to-Source On-Resistance - -- 9 mg Vss = -2.5V, ID = -13.6A ©
- - 13 VGS=-1.8V, b---11.5A©
VGS(th) Gate Threshold Voltage -O.4 - -O.9 V Vos = Ves, ID = -250pA
AN/sam/AT, Gate Threshold Voltage Coefficient - -3.09 - mV/°C
gfs Forward Transconductance 55 - - S Vos = -10V, ID = -16A
loss Drain-to-Source Leakage Current - - -1.0 VDS = -9.6V, l/ss = 0V
- - -25 PA Vrys = -9.6V, Vss = OV, T J = 70°C
less Gate-to-Source Forward Leakage - - -100 nA Ves = -8V
Gate-to-Source Reverse Leakage - - 100 I/ss = 8V
q, Total Gate Charge - 91 ID = -16A
As Gate-to-Source Charge -- 18 -- nC VDS =-9.6V
di Gate-to-Drain ("Miller") Charge - 25 Vss = -4.5v ©
td(on) Turn-On Delay Time - 13 20 VDD = -6V Vas = -4.5V
t, Rise Time - 12 18 ID =-1.0A
tom Turn-Off Delay Time - 271 407 ns RD = 69
t, Fall Time - 200 300 Ra = 69 co
Ciss Input Capacitance - 8676 - Vss = 0V
Coss Output Capacitance -- 2344 -- pF vDS = -10V
Crss Reverse Transfer Capacitance - 1604 - f = 1.0 MHz
Source-Drain Ratings and Characteristics
Symbol Parameter Min. Typ. Max Units Conditions
ls Continuous Source Current -- -- -2 5 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current _ - -65 integral reverse G
(Body Diode) CD p-n junction diode. S
Vso Diode Forward Voltage -- -- -1.2 v T, = 25°C, ls = -2.5A, l/ss = OV ©
tn Reverse Recovery Time - 97 145 ns T, = 25°C IF = -2.5A
Q,, Reverse Recovery Charge - 134 201 MC di/dt = -100A/ps ©
Notes:
OD Repetitive rating; pulse width limited by
max. junction temperature.
C) Pulse width I 400ps; duty cycle 5 2%.
G) Surface mounted on 1 in square Cu board, t S 10sec.
