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IRF740SIRN/a178000avai400V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
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IRF740S-IRF740STRL-IRF740STRR
400V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
intet,!yatii9tall
1:212 Rectifier
PD-9.1010
IRF740S
HEXFET® Power MOSFET
o Surface Mount
o Available in Tape & Reel
Dynamic dv/dt Rating
q Repetitive Avalanche Rated
Fast Switching
0 Ease of Paralleling
0 Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
vDSS = 400V
RDS(on) = 0.559
ID---10A
on-resistance and cost-effectiveness.
The SMD-220 is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The SMD-220
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
SMD-220
Absolute Maximum Ratings
Parameter Max. Units
19 @ Tc = 25°C Continuous Drain Current, Vss © 10 V 10
lo @ Tc = 100°C Continuous Drain Current, I/ss @ 10 V 6.3 A
IDM Pulsed Drain Current CD 40
Po @ To = 25°C Power Dissipation 125 W
1 Po @ TA = 25°C Power Dissipation (PCB Mount)" 3.1
E Linear Derating Factor 1.0 W PC
Linear Derating Factor (PCB Mount)" 0.025
Vas Gate-to-Source Voltage i20 V
EAs Single Pulse Avalanche Energy Q) 520 m.)
IAR Avalanche Current (i) 10 A
EAR Repetitive Avalanche Energy C) 13 mJ
dv/dt Peak Diode Recovery dv/dt © 4.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -5510 +150 J QC
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
I Parameter Min. Typ. Max. Units
Rac Junction-to-Case - ._.-..- 1.0
Rem Junction-to-Ambient (PCB mount)" - - 4O °C/W
Rem Junction-to-Ambient - - 62
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
iRF74os
Electrical Characteristics tii! Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(anss Drain-to-Source Breakdown Voltage 400 -- - V Vss=OV, ID: 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.49 - V/°C Reference to 25°C, 10: 1mA
Roam) Static Drain-to-Source On-Resistance - - 0.55 Q VGs=10V, Io=6.0A ©
Vesuh) Gate Threshold Voltage 2.0 - 4.0 V vosszs, ID: 250uA
gts Forward Transconductance 5.8 - - S Vos=50V, Io=6.0A @
loss Drain-to-Source Leakage Current - - 25 WA VDS=400V’ l/ass-OV
- - 250 Vos=320V, Vas---0V, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A Ves=2OV
Gate-to-Source Reverse Leakage - -- -100 VGs=-20V
ch Total Gate Charge - - 63 lo=10A
Qgs Gate-to-Source Charge ....- - 9.0 no VDs=320V
di Gate-to-Drain ("Miller") Charge - - 32 VGs=1OV See Fig. 6 and 13 ©
mun) Turn-On Delay Time - 14 - VDD=200V
tr Rise Time _-..- 27 - ns b=10A
td(ofi) Turn-Off Delay Time - 50 - Re=9.1Q
tr Fall Time - 24 - RD=2052 See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - , ::a ite. ') D
nH from package egg)
Ls Internal Source Inductance - 7.5 - and center bf
die contact s
Ciss Input Capacitance - 1400 - VGs=0V
Cogs Output Capacitance - 330 - pF V05: 25V
Crss Reverse Transfer Capacitance - 120 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 10 MOSFET symbol D
(Body Diode) A showing the bd:
ISM Pulsed Source Current - _ 40 integral rever§e G CL
(Body Diode) co p-n junction diode. s
Vso Diode Forward Voltage - - 2.0 V TJ=25°C, I5=10A, Vos=OV ©
tn Reverse Recovery Time - 370 790 ns TJ=25°C, IF=10A
er Reverse Recovery Charge - 3.8 8.2 wc di/dt=100A/ps Ci)
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
Ci) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© Voo=50V, starting TJ=25°C, L=9.1mH
RG=25§2, IAtp=10A (See Figure 12)
© Isos1OA, di/dts120A/ps, VDDSV(BR)DSS.
TJS150°C
© Pulse width 3 300 us; duty cycle s2%.
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