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IRF7404QTRPBFIORN/a37500avai-20V Dual P-Channel HEXFET Power MOSFET in a LeadFree SO-8 -package


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IRF7404QTRPBF
-20V Dual P-Channel HEXFET Power MOSFET in a LeadFree SO-8 -package
END OF LIFE
International IRF7404QPbF
TOR Rectifier HEXFET© Power MOSFET
S D311 I 8 ELL] D -
. Advanced Process Technology SE2 _ 7 D VDSS - -20V
q Ultra Low On-Resistance 3 It 6333
. P Channel MOSFET S m :1: D
. Surface Mount G LLU" 5 D R = 0.040Q
. Available in Tape & Reel . E DS(on)
q 150°C OperatingTemperature Top View
. Lead-Free
Description
These HEXFETO Power MOSFETs in package utilize the
lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
HEXFET Power MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating. These benefits combine to make this
design an extremely efficient and reliable device for use in
a wide variety of applications.
The efficient SO-8 package provides enhanced thermal
characteristics making it ideal in a variety of power
applications. This surface mount SO-8 can dramatically
reduce board space and is also available in Tape & Reel.
Standard Pack
Base part number Orderable part number P1321913 Form Quantity MES; Replacement Part Number
IRF - , .
lRF7404OPbF 7404QTRPbF SO 8 Tape and Reel 4000 EOL 527 Please search the EOL pgn number on IRS website for
IRF7404aPbF so-s Tube 95 EOL 529 guidance
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C 10 Sec. Pulsed Drain Current, l/ss @ -4.5V -7.7
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -6.7 A
ID @ TA = 70°C Continuous Drain Current, Vss @ -4.5V -5.4
IDM Pulsed Drain Current OD -27
Pro @TA = 25°C Power Dissipation 2.5 W
Linear Derating Factor 0.02 W/°C
Vss Gate-to-Source Voltage 1 12 V
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
TU,TSTG Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance Ratings
Parameter Typ. Max. Units
Roe Maximum Junction-to-Ambient@ - 50 ''C/1lV
1
02/10/15

END OF LIFE
IRF7404QPbF
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max Units Conditions
V(BR)D53 Drain-to-Source Breakdown Voltage -20 - - V Vcs = 0V, ID = -250pA
AWBRmSSIATJ Breakdown Voltage Temp. Coefficient - -0.012 - V/°C Reference to 25°C, ID = -1mA
RDS(ON) Static Drain-to-Source On-Resistance - - O.040 Q VGS i -4.5V, ID i -3.2A ©
- - 0.060 VGs - -2.7V, ID - -2.7A ©
VGS(th) Gate Threshold Voltage -O.7O - - V I/os = VGs, ID = -250pA
gfs Forward Transconductance 6.8 - - S Vos = -15V, ID = -3.2A
IDss Drain-to-Source Leakage Current T, : If pA VS: =" Ct) V: =" tf, To = 125°C
less Gate-to-Source Forward Leakage - - -100 nA Vcs = -12V
Gate-to-Source Reverse Leakage - - 100 VGS = 12V
Qg Total Gate Charge - - 50 ID = -3.2A
Qgs Gate-to-Source Charge - - 5.5 nC VDs = -16V
di Gate-to-Drain ("Miller") Charge - - 21 Vcs = -4.5V, See Fig. 6 and 12 ©
tmn) Turn-On Delay Time - 14 - VDD = -10V
tr Rise Time - 32 - ns ID = -3.2A
td(off) Turn-Off Delay Time - 100 - RG = 6.09
tf Fall Time - 65 - RD = 3.19. See Fig. 10 ©
LD Internal Drain Inductance - 2.5 - .
nH Between lead tip
and center of die contact
LS Internal Source Inductance - 4.0 -
Ciss Input Capacitance - 1500 - VGs = 0V
Coss Output Capacitance - 730 - pF Vos = -15V
Crss Reverse Transfer Capacitance - 340 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - -3 1 MOSFET symbol D
(Body Diode) . showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) OD - - -27 p-n junction diode. s
l/sc, Diode Forward Voltage - - -1.0 V Tu = 25°C, Is = -2.0A, Vcs = 0V ©
trr Reverse Recovery Time - 69 100 ns Tu = 25°C, IF = -3.2A
Qrr Reverse RecoveryCharge - 71 110 HO di/dt = 1OOA/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
co ISD S -3.2A, di/dt S -65/Ups, VDD S V(BR)DSS!
TJ f 150°C

© Pulse width f 300psi duty cycle 3 2%.
69 Surface mounted on FR-4 board, ts 10sec.

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