IC Phoenix
 
Home ›  II27 > IRF7353D2TRPBF,30V FETKY
IRF7353D2TRPBF Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
IRF7353D2TRPBFIORN/a80000avai30V FETKY
IRF7353D2TRPBFIRN/a40000avai30V FETKY


IRF7353D2TRPBF ,30V FETKYElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
IRF7353D2TRPBF ,30V FETKYapplications.SO-8The SO-8 has been modified through a customized leadframe for enhancedthermal char ..
IRF7379 ,30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 packagePD - 91625IRF7379®HEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MO SFETN-Ch P-Ch18l Ultra ..
IRF7379 ,30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 packageapplications. With these improvements, multipleSO-8devices can be used in an application with dram ..
IRF7379ITRPBF ,30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package designed and qualified for the industrial marketIRF7379IPbF®HEXFET Power MOSFET Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8U ..
IRF7379QPBF ,30V Dual N- and P- Channel HEXFET Power MOSFET in a Lead-Free SO-8 packageapplications.The efficient SO-8 package provides enhancedthermal characteristics and dual MOSFET di ..
ISL12027IV27AZ , Real Time Clock/Calendar with EEPROM
ISL12028IB27Z , Real Time Clock/Calendar with I2C Bus™ and EEPROM
ISL12028IB30AZ , Real Time Clock/Calendar with I2C Bus™ and EEPROM
ISL12028IVAZ , Real Time Clock/Calendar with I2C Bus™ and EEPROM
ISL12029IB30AZ , Real Time Clock/Calendar with I2C Bus™ and EEPROM
ISL1208IU8 , Low Power RTC with Battery Backed SRAM


IRF7353D2TRPBF
30V FETKY
International PD- 95215A
TOR Rectifier IRF7353D2PbF
o Co-Pack HEXFET6 Power MOSFET and FETKY"'MOSFET / Schottky Diode
Schottky Diode
q Ideal For Buck Regulator Applications A DI‘ _ bt ' ID K VDSS = 30V
0 N-Channel HEXFET power MOSFET A ',,11-,/ 4113 K
q Low VF Schottky Rectifier 3 6 R = 00299
e Generation 5 Technology S E E D DS(on)
0 SO-8 Footprint G DI“ 5:1: D S -
chottk V - 0.52V
o Lead-Free y F
Top View
Description
The FETKYTM family of Co-Pack HEXFET® Power MOSFETs and Schottky
diodes offers the designer an innovative, board space saving solution for
switching regulator and power management applications. Generation 5
HEXFET power MOSFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combinining this
technology with International Rectifer's low forward drop Schottky rectifers
results in an extremely ethcient device suitable for use in a wide variety of
portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced 80-8
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter Maximum Units
ID @ TA = 25°C Continuous Drain Current © 6.5 A
ID @ TA = 70°C 5.2
kn, Pulsed Drain Current (D 52
Po @TA = 25°C Power Dissipation Cl) 2.0 W
Pro @TA = 70°C 1.3
Linear Derating Factor 16 mW/°C
VGs Gate-to-Source Voltage * 20 V
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to +150 "C
Thermal Resistance Ratings
Parameter Maximum Units
ROM l Junction-to-Ambient S 62.5 °CNV
Notes:
6) Repetitive rating; pulse width limited by maximum junction temperature (see Ftgure 9)
© Starting TJ = 25°C, L =10mH,RG = 25Q, IAS = 4.0A
© ISO 3 4.0A, di/dt s 74A/ps, V00 3 V(BR)DSS, To 3 150''C
co Pulse width 3 300ps; duty cycle s: 2%
6X Surface mounted on FR-4 board, ts 10sec.
1
10/8/04

|RF7353D2PbF
International
TOR Rectifier
MOSFET Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V N/ss = 0V, ID = 250pA
RDSm Static Drain-to-Source On-Resistance - 0.023 0.029 Q VGS = 10V, ID = 5.8A 6)
- 0.032 0.046 VGS = 4.5V, ID = 4.7A (0
Vesoh) Gate Threshold Voltage 1.0 - - V Vos = VGs, ID = 250pA
gts Forward Transconductance - 14 - S Vos = 24V, ID = 5.8A
IDSS Drain-to-Source Leakage Current - - 1.0 Vos = 24V, VGS = 0V
- - 25 pA Vos = 24V, VGS = 0v, To = 55°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 N/ss = -20V
09 Total Gate Charge - 22 33 ID = 5.8A
Qgs Gate-to-Source Charge - 2.6 3.9 nC Vros = 24V
di Gate-to-Drain ("Miller") Charge - 6.4 9.6 VGS = 10V (see figure 8) ©
td(on) Turn-On Delay Time - 8.1 12 VDD = -5V
tr Rise Time - 8.9 13 ns ID = 1.0A
tam) Turn-Off Delay Time - 26 39 Rs = 6.09
tf Fall Time - 18 26 RD = 159 G)
Ciss Input Capacitance - 650 - N/ss = 0V
Coss Output Capacitance - 320 - pF Vros = 25V
Crss Reverse Transfer Capacitance - 130 - f = 1.0MHz (see figure 7)
MOSFET Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current (Body Diode - - 2.5 A
ISM Pulsed Source Current (Body Diode) - - 30
V59 Body Diode Forward Voltage - 0.78 1.0 V TJ = 25°C, Is = 1.7A, VGS = 0V
trr Reverse Recovery Time (Body Diode) - 45 68 ns TJ = 25°C, IF = 1.7A
Qrr Reverse Recovery Charge - 58 87 n0 di/dt = 100A/ps ©
Schottky Diode Maximum Ratings
Parameter Max. Units Conditions
IF (av) Max. Average Forward Current 3.2 A 50% Duty Cycle. Rectangular Wave, Tc = 25°C
2.0 50% Duty Cycle. Rectangular Wave, To = 70°C
ISM Max. peak one cycle Non-repetitive 200 5ps sine or 3ps Rect. pulse Following any rated
Surge current 20 A 10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
Schottky Diode Electrical Specifications
Parameter Max. Units Conditions
VFM Max. Forward voltage drop 0.57 If = 3.0, T] = 25°C
0.77 V If= 6.0, Tj = 25°C
0.52 If = 3.0, Tj = 125°C
0.79 If = 6.0, Tj = 125°C
lm, Max. Reverse Leakage current 0.30 m A Vr = 30V n = 25°C
37 T] = 125°C
ch Max. Junction Capacitance 310 pF Vr = 5Vdc (100kHz to 1 MHz) 25°C
dv/dt Max. Voltage Rate of Charge 4900 V/ps Rated Vr
( HEXFET is the reg. TM tor International Rectifier Power MOSFET's )


ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED