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IRF7351IRN/a4687avai60V Dual N-Channel HEXFET Power MOSFET in a SO-8 package


IRF7351 ,60V Dual N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQg (typ.)DSS DS(on) Synchronous Rectifier MOSFET for17.8mΩ @V = 10V60V 24nCGSIs ..
IRF7353D1 ,30V FETKYApplications AK N-Channel HEXFET3 6 R = 0.029ΩDS(on)S D Low V Schottky RectifierF4 5G D Generati ..
IRF7353D1TR ,30V FETKYElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
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IRF7351
60V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 97436
IlRF7351PbF
HEXFET® Power MOSFET
International
TOR, Rectifier
Applications VDSS RDS(on) max Clg (typ.)
o Synchronous Rectifier MOSFET for -
Isolated DC-DC Converters 60V 17'8mQ@VGS - 10V 24nC
0 Low Power Motor Drive Systems
S1 t_LuL 8 _LL D1
Benefits 2 _ " 7 V 'i" V
o Ultra-Low Gate Impedance G1 L D1 ,t(jil' "
o Fully Characterized Avalanche Voltage S2 l ll Itft, ll D2 J:
and Current G2 4 51 D2
0 20V l/ss Max. Gate Rating Top View SO-8
Absolute Maximum Ratings
Parameter Max. Units
l/ns Drain-to-Source Voltage 60 V
Vas Gate-to-Source Voltage i 20
ID @ TA = 25°C Continuous Drain Current, Ves @ 10V 8.0
ID @ TA = 70°C Continuous Drain Current, l/ss @ 10V 6.4 A
IDM Pulsed Drain Current C) 64
PD @TA = 25°C Power Dissipation CO 2.0 W
PD @TA = 70°C Power Dissipation © 1.28
Linear Derating Factor 0.016 W/°C
TJ Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
Raul, Junction-to-Drain Lead © - 20 °CNV
Rau, Junction-to-Ambient C90) - 62.5
Notes co through © are on page 10
1
11/18/09

|RF7351PbF
International
TOR Rectifier
Static © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 60 - - V l/ss = 0V, ID = 250PA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.068 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 13.7 17.8 mg l/ss = 10V, ID = 8.0A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = Vss, ID = 50PA
Avesuh) Gate Threshold Voltage Coefficient - -8.2 - mV/°C
loss Drain-to-Source Leakage Current - - 20 pA VDS = 60V, I/ss = 0V
- - 250 l/DS = 60V, vGS = 0v, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA I/ss = 20V
Gate-to-Source Reverse Leakage -- -- -100 I/ss = -20V
gfs Forward Transconductance 18 -- - S Vos = 25V, ID = 6.4A
q, Total Gate Charge .-.-.- 24 36
0951 Pre-Vth Gate-to-Source Charge - 3.8 - Vos = 30V
0952 Post-Vth Gate-to-Source Charge - 1.2 - nC l/ss = 10V
di Gate-to-Drain Charge - 7.2 - ID = 6.4A
ngdr Gate Charge Overdrive - 11.8 - See Fig. 17
st Switch Charge (0932 + di) - 8.4 -
Qoss Output Charge - 7.5 - nC Vos = 16V, I/ss = 0V
td(on) Turn-On Delay Time - 5.1 - VDD = 30V, l/ss = 10V ©
t, Rise Time - 5.9 - ns ID = 6.4A
tam) Turn-Off Delay Time - 17 - FIG = 1.89
t, Fall Time - 6.7 -
Ciss Input Capacitance - 1330 - l/ss = 0V
Coss Output Capacitance - 190 - pF VDS = 30V
Crss Reverse Transfer Capacitance - 92 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAs Single Pulse Avalanche Energy © - 325 mJ
IAR Avalanche Current CO - 6.4 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 1.8 MOSFET symbol D
(Body Diode) A showing the Lt
ISM Pulsed Source Current - - 64 integral reverse G (tLl
(Body Diode) C) p-n junction diode. fl
Vso Diode Forward Voltage -- -- 1.3 V TJ = 25°C, ls = 6.4A, Vas = 0V ©
trr Reverse Recovery Time --.- 20 30 ns TJ = 25°C, IF = 6.4A, VDD = 30V
2, Reverse Recovery Charge - 61 92 nC di/dt = 3OOA/ps ©
2

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