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IRF7350TRPBFIORN/a50000avai100V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
IRF7350TRPBFIRN/a2725avai100V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package


IRF7350TRPBF ,100V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 packageapplications.The SO-8 has been modified through a customized leadframe for enhancedthermal characte ..
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IRF7350TRPBF
100V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
PD - 95367
IRF7350PbF
HEXFET® Power MOSFET
q Ultra Low On-Resistance N-CHANNELMOSFET N-Ch P-Ch
q Dual N and P Channel MOSFET SI LIEI- l 8333 D1
q Surface Mount GI w} 7L D1 V V V
. . 100 -100
q Available In Tape and Reel S2 LIII3- SID D2 DSS
o Lead-Free l
G2 LIE' 5331 D2
PA>iANNELMOSFET RDS(on) 0.21Q 0.48f2
Top View
Description
These dual N and P channel HEXFET6 power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve extremely low
on-resistance persilicon area. This benefit, combined withthefast switching
speed and ruggedized device design that HEXFETO power MOSFETs are
well known for, provides the designer with an extremely efficient and reliable
device for use in DC motor drives and load management applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety
of power applications. With these improvements, multiple devices can be SO-8
used in an application with dramatically reduced board space. The package
is designed for vapor phase, infra red, or wave soldering techniques.
Absolute Maximum Ratings
Max. .
Parameter Units
N-Channel P-Channel
VDS Drain-to-Source Voltage 100 -100
ID @ TA = 25°C Continuous Drain Current, l/ss @ 10V 2.1 -1.5 A
In @ TA = 70°C Continuous Drain Current, Vss @ 10V 1.7 -1.2
IDM Pulsed Drain Current (D 8.4 -6.0
PD @TA = 25°C Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/°C
EAS Single Pulse Avalanche Energy© 35 51 m1
VGs Gate-to-Source Voltage * 20 i 20 V
dv/dt Peak Diode Recovery dv/dt 2 4.0 4.3 V/ns
TJ‘TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJL Junction-to-Drain Lead - 20
ReJA Junction-to-Ambient © - 62.5 °C/W
1
6/10/04

IRF7350PbF
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
International
OR Rectifier
Parameter Min. Typ. Max. Units Conditions
. N-Ch 100 - - V =0V I =250 A
V Drain-to-Source Breakdown Volta e GS , D p
(“ms g P-Ch -1oo - - V Vas = OV, ID = -250pA
. . N-Ch - 0.12 - . Reference to 25°C, ID = 1mA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient P-Ch - 4hl 1 - V/ c Reference to 25°C, ID = - 1 m A
N-Ch - - 0.21 Ves =10V, ID = 2.1A ©
RDS(ON) Static Drain-to-Source On-Resistance Q
P-Ch - - 0.48 Vas = -10V, ID = -1.5A ©
N-Ch 2.0 - 4.0 Vros = VGs, ID = 250pA
V G t Th h Id V It
GS(th) a e res o 0 age P-Ch -2.o - -4.0 V Vrys = VGS, ID = -250PA
N-Ch 2.4 - - Vos = 50V, lo = 2.1A
gts ForwardTransconductance P-Ch 1.1 - - s Vos = -50V, ID = -1.5A
N-Ch - - 25 Vos =100V,Vas = ov Q)
. P-Ch - - -25 Vros = -100V, VGS = 0V ©
I D -t - L k t
DSS ran o Source ea age Curren N-Ch - - 250 pA Vros = 80 V, Ves = 0V, Tu = 70°C
P-Ch - - -250 Vros = -8OV, Ves = 0V, Tu = 70°C
less Gate-to-Source Forward Leakage N-P - - 1100 VGS = 1 20V
N-Ch - 19 28
Q9 Total Gate Charge P-Ch - 21 31 N-Channel
N-Ch - 3 O 4 5 b = 2.1A, Vos = 80V, Vss =1OV
Qgs Gate-to-Source Charge P Ch 3‘4 i; nC
. . N-Ch - 8'8 1'3 P-Channel
di Gate-to-Drain ("Miller") Charge P-Ch - G 16 ID = -1 .5A, VDS = -80V,VGs = -10V
tum”) Turn-On Delay Time :3: I l,' I N-Channel
. . N-Ch - 11 - VDD = 50V, ID =1.0A, Rs = 229,
t, Rise Time P-Ch - 13 - RD = 509, Ves = 10V
. N-Ch - 35 - ns ©
td(ott) Turn-Off Delay Time P-Ch - 30 - P-Channel
. N-Ch - 20 - VDD = -50V, ID = -1.0A, RG = 229.
tf Fall Time P-Ch - 4O - RD = 5092, Vas = -10V
Ciss Input Capacitance g‘g: - te - N-Channel
N-Ch - 100 - Vas = 0V, Vos = 25V, f =1.0MHZ
Coss Output Capacitance pF
:2: - 11f - P-Channel
Crss Reverse Transfer Capacitance P:Ch I if, I Veg = OV, Vos = -25V, f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min Typ Max. Units Conditions
. . N-Ch - - 1.8
Is Continuous Source Current (Body Diode) P-Ch - - -1.4 A
N-Ch - - 8.4
ISM Pulsed Source Current (Body Diode) Ci) P-Ch - - -6.0
N-Ch - - 1.3 V TJ = 25°C, ls = 1.8A, Vas = 0V ©
Vso Diode Forward Voltage P-Ch - - -1.6 To = 25°C, ls = -1.4A, Vos = 0V Q)
. N-Ch - 72 110 ns N-Channel
tr, Reverse Recovery Time P-Ch - 77 120 To = 25°C, IF = 1.8A, di/dt = 100A/ps
N-Ch - 205 310 nC P-Channel ©
Qrr Reverse Recovery Charge P-Ch - 240 360 To = 25°C, IF = -1.4A, di/dt = -100A/us
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width S 400ps; duty cycle S 2%.
© Surface mounted on 1 in square Cu board

© N channel: Starting TJ = 25°C, L = 4.0mH, Rs = 25n, IAS = 4.2A
P channel: Starting To = 25°C, L =11mH, RG = 259, IAS = -3.0A

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