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IRF7342TRPBF
-55V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
PD - 95200
IRF7342PbF
HEXFET® Power MOSFET
. Generation V Technology
o Ultra Low On-Resistance
q Dual P-Channel Mosfet SI51r- 8:1: DI
0 Surface Mount GI CI 1 LETE D1 VDSS = -551/
q Available in Tape & Reel 6
0 Dynamic dv/dt Rating S2 Dig l Em D2
. . - 5 -
q Fast Switching G2 Bl ELL D2 RDS(on) = 01059
0 Lead-Free .
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain- Source Voltage -55 V
ID @ TC = 25°C Continuous Drain Current, Vss @ 10V -3.4
ID @ To = 70°C Continuous Drain Current, Vas @ 10V -2.7 A
IDM Pulsed Drain Current (D -27
PD @Tc = 25°C Power Dissipation 2.0
PD @TC = 70°C Power Dissipation 1.3 W
Linear Derating Factor 0.016 W/°C
Vas Gate-to-Source Voltage i 20 V
VGSM Gate-to-Source Voltage Single Pulse tp<10ps 30 V
EAS Single Pulse Avalanche Energy© 114
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
Tu, Tsms Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Typ. Max. Units
RQJA Maximum Junction-to-Ambient® - 62.5 ''C/W
10/7/04
lRF7342PbF International
TOR Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 -- - V Vss = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - -0.054 - V/°C Reference to 25°C, ID = -1mA
Roam) Static Drain-to-SourceOn-Resistance - O.095 0.105 Q l/ss = -10V, ID = -3.4A ©
- 0.150 0.170 Veg = -4.5V, ID = -2.7A (9
VGS(th) Gate Threshold Voltage -1.0 - - V Vos = I/ss, ID = -250pA
gfs Forward Transconductance 3.3 - - S Vos = -10V, ID = -3.1A
loss Drain-to-Source LeakageCurrent : : le pA x3: : :21: x2: : g, Tu = 55°C
less Gate-to-Source Forward Leakage - - -100 n A Ves = -20V
Gate-to-Source Reverse Leakage - - 100 Vas = 20V
% Total Gate Charge - 26 38 ID = -3.1A
Qgs Gate-to-Source Charge - 3.0 4.5 nC VDs = -44V
di Gate-to-Drain ("Miller") Charge - 8.4 13 Veg = -10V, See Fig. 10 (D
td(on) Turn-On Delay Time - 14 22 I/oo = -28V
tr Rise Time - 10 15 ns ID = -1.0A
td(off) Turn-Off Delay Time - 43 64 Rs = 6.09
tf Fall Time -.-.- 22 32 RD = 169, ©
Ciss Input Capacitance - 690 - l/ss = ov
Coss Output Capacitance - 210 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 86 - f = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max Units Conditions
Is Continuous SourceCurrent MOSFET symbol D
(Body Diode) - - -2.0 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) OD - - -27 p-n junction diode. s
l/so Diode Forward Voltage - - -1.2 V Tu = 25°C, Is = -2.0A, l/ss = 0V ©
trr Reverse Recovery Time - 54 80 ns Tu = 25°C, IF = -2.0A
Qrr Reverse RecoveryCharge - 85 130 no di/dt = -1OOA/ps ©
Notes:
(D Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting Tu = 25°C, L = 20mH
Re = 259, 'As = -3.4A. (See Figure 8)
© ISD S -3.4A, di/dt S -150A/ps, VDD S V(BR)DSS,
Trs 150°C
© Pulse width s: 300us; duty cycle 3 2%.
© When mounted on 1 inch square copper board, t<10 sec
