IRF7342D2TRPBF ,-55V FETKYElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
IRF7342PBF , HEXFET® Power MOSFET (VDSS = -55V , RDS(on) = 0.105Ω)
IRF7342QPBF ,-55V Dual P-Channel HEXFET Power MOSFET in a Lead-Free SO-8 packagefeatures ofthese HEXFET Power MOSFET's are a 150°C junctionoperating temperature, fast switching ..
IRF7342QTRPBF ,-55V Dual P-Channel HEXFET Power MOSFET in a Lead-Free SO-8 packageapplications. This dual, surfacemount SO-8 can dramatically reduce board space and is alsoSO-8avail ..
IRF7342QTRPBF ,-55V Dual P-Channel HEXFET Power MOSFET in a Lead-Free SO-8 package ®
IRF7342D2TRPBF
-55V FETKY
International
miRRectifier
o Co-packaged HEXFET© Power
MOSFET and Schottky Diode
Ideal For Buck Regulator Applications
P-Channel HEXFET©
Low VF Schottky Rectifier
SO-8 Footprint
Lead-Free
Description
The FETKYTM family of Co-packaged HEXFETs and
Schottky diodes offerthedesigner an innovative board
space saving solution for switching regulator and
power management applications. HEXFETs utilize
advanced processing techniques to achieve extremely
low on-resistance per silicon area. Combining this
technology with International Rectifier's low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
PD- 95299
IIRF7342D2PbF
FETKYTMMOSFET & Schottky Diode
A DI‘ , 81le VDSS = -55V
A E2 1:31 K
s ',,C,c,r'4'r,ijiiil(r',,C,," D RDS(on) = 105mf2
G mr-'- 5113 D
Schottky Vf = 0.61V
Top View
The SO-8 has been modified through a customized SO-8
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Parameter Maximum Units
ID @ TA = 25°C Continuous Drain Current, l/ss © -10V -3.4 A
ID © TA = 70°C Continuous Drain Current, l/ss @ -10V -2.7
IDM Pulsed Drain Current C) -27
PD @TA = 25°C Power Dissipation 2.0 W
Po @TA = 70°C Power Dissipation 1.3
Linear Derating Factor 16 mW/°C
l/ss Gate-to-Source Voltage t 20 V
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
TJ TSTG Junction and Storage Temperature Range -55 to +150 °C
Thermal Resistance
Symbol Parameter Typ. Max. Units
Fur, Junction-to-Drain Lead, MOSFET --- 20
ReJA Junction-to-Ambient (D, MOSFET - 62.5 °C/W
RQJA Junction-to-Ambient ©, SCHOTTKY --- 62.5
Notes:
(D Repetitive rating - pulse width limited by max. junction temperature (see fig. 11)
© ISDS -3.4A, di/dt S -150A/ps, VDD S V(BR)D581 To S 150°C
G) Pulse width S 400ps - duty cycle S 2%
© Surface mounted on 1 inch square copper board, t S 10sec.
1
10/13/04
|RF7342D2PbF
International
Electrical Characteristics © Tu = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 - - V Vss = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - -0.054 - V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance - 95 105 mg Vas = -10V, ID = -3.4A ©
- 150 170 Vss = -4.5V, ID = -2.7A ©
VGS(th) Gate Threshold Voltage -1.0 - - V Vos = Vas, ID = -250pA
gfs Forward Transconductance 3.3 - - S Vos = -1OV, lo = -3.1A
loss Drain-to-Source Leakage Current _- _- Cf pA 'ti: : Cg', 1:: : g, To = 70°C
less Gate-to-Source Forward Leakage - - -100 n A Vas = -20V
Gate-to-Source Reverse Leakage - - 100 Vas = 20V
% Total Gate Charge - 26 38 ID = -3.1A
Qgs Gate-to-Source Charge - 3.0 4.5 nC Vos = -44V
the Gate-to-Drain ("Miller") Charge - 8.4 13 Vas = -1ov, See Fig. 6 & 14 ©
td(on) Turn-On Delay Time - 14 22 l/oo = -28V
t, Rise Time - IO 15 ns ID = -1.0A
td(off) Turn-Off Delay Time - 43 64 Rs = 6.09
tf Fall Time - 22 32 Vss = -10V, ©
Ciss Input Capacitance - 690 - Vas = 0V
Coss Output Capacitance - 210 - pF Vos = -25V
Crss ReverseTransferCapacitance - 86 - f = 1.0MH2, See Fig. 5
MOSFET Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current(Body Diode) - - -2.0 A
ISM Pulsed Source Current (Body Diode) - - -27
VSD Body Diode Forward Voltage - - -1.2 V TJ = 25°C, Is = -2.0A, N/ss = 0V
trr Reverse Recovery Time (Body Diode) - 54 80 ns To = 25°C, IF = -2.0A
G, Reverse Recovery Charge - 85 130 nC di/dt = 100A/ps©
Schottky Diode Maximum Ratings
Parameter Max. Units Conditions
If (av) Max. Average Forward Current 3.0 A 50% Duty Cycle. Rectangular Wave, TA = 57°C
See Fig. 21
ISM Max. peak one cycle Non-repetitive 490 A 5ps sine or Sus Rect. pulse Following any rated
Surge current 70 10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
Schottky Diode Electrical Specifications
Parameter Max. Units Conditions
me Max. Forward Voltage Drop 0.61 If = 3.0A, Tj = 25°C
0.76 If = 6.0A, Tj = 25°C
0.53 V If = S.OA, T] = 125°C
0.65 If = 6.0A, Ti = 125°C
Vrrm Max. Working Peak Reverse Voltage 60 V
Irm Max. Reverse Leakage Current 2.0 mA Vr = 60V Tj = 25°C
30 Tj=125°C
Ct Max. Junction Capacitance 145 pF Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
2
