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IRF7342D2IRN/a194avai-55V FETKY
IRF7342D2IORN/a86avai-55V FETKY


IRF7342D2 ,-55V FETKYapplications.The SO-8 has been modified through a customizedSO-8leadframe for enhanced thermal char ..
IRF7342D2 ,-55V FETKYElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
IRF7342D2TRPBF ,-55V FETKYElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
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IRF7342D2
-55V FETKY
International
miRRectifier
o Co-packaged HEXFET© Power
MOSFET and Schottky Diode
Ideal For Buck Regulator Applications
P-Channel HEXFET©
Low VF Schottky Rectifier
SO-8 Footprint
Description
The FETKYTM family of Co-packaged HEXFETs and
Schottkydiodes offerthe designer an innovative board
space saving solution for switching regulator and
power management applications. HEXFETs utilize
advanced processing techniques to achieve extremely
low on-resistance per silicon area. Combining this
technology with International RectITIer's low forward
drop Schottky rectiflers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
PD- 94101A
IRF7342D2
FETKYTMMOSFET & Schottky Diode
Top View
E K VDSS = -55V
6333 D RDS(on
5113 D
Schottky Vf = 0.61V
)=105m§2
The SO-8 has been modified through a customized SO-8
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Parameter Maximum Units
ID @ TA = 25''C Continuous Drain Current, Vss @ -10V -3.4 A
ID @ TA = 70°C Continuous Drain Current, l/ss @ -10V -2.7
IDM Pulsed Drain Current C) -27
Po @TA = 25°C Power Dissipation 2.0 W
Pro @TA = 70°C Power Dissipation 1.3
Linear Derating Factor 16 mW/°C
Vss Gate-to-Source Voltage * 20 V
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
T J TSTG Junction and Storage Temperature Range -55 to +150 "C
Thermal Resistance
Symbol Parameter Typ. Max. Units
' Junction-to-Drain Lead, MOSFET - 20
ReJA Junction-to-Ambient (D, MOSFET - 62.5 "C/W
RQJA Junction-to-Ambient ©, SCHOTTKY - 62.5
Notes:
(D Repetitive rating - pulse width limited by max. junction temperature (see fig. 11)
© ISD S -3.4A, di/dt S -150/Ups, N/oo S V(BR)ross, To S 150°C
G) Pulse width S 400ps - duty cycle S 2%
© Surface mounted on 1 inch square copper board, t S 10sec.
1
10/21/04

IRF7342D2
International
Electrical Characteristics @ T J = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 - - V VGS = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - -0.054 - V/°C Reference to 25''C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance - 95 105 mf2 VGS = -10V, ID = -3.4A ©
- 150 170 VGS = M.5V, ID = -2.7A ©
Vegan) Gate Threshold Voltage -1.0 - - V Vos = VGs, ID = -250pA
gis Forward Transconductance 3.3 - - S Vos = -10V, lo = -3.1A
loss Drain-to-Source Leakage Current _- _- ji) PA VS: , :13; "tyr-g, To = 70°C
less Gate-to-Source Forward Leakage - - -100 n A VGS = -20V
Gate-to-Source Reverse Leakage - - 100 VGS = 20V
% Total Gate Charge - 26 38 ID = -3.1A
Qgs Gate-to-Source Charge - 3.0 4.5 nC Vos = -441/
di Gate-to-Drain ("Miller") Charge - 8.4 13 Kas = -10V, See Fig. 6 & 14 ©
tdwn) Turn-On Delay Time - 14 22 VDD = -28V
tr Rise Time - 10 15 ns ID = -1.0A
td(off) Turn-Off Delay Time - 43 64 Rs = 6.09
tf Fall Time - 22 32 V68 = -10V, ©
Ciss Input Capacitance - 690 - VGS = 0V
Coss Output Capacitance - 210 - pF Vos = -25V
Crss ReverseTransferCapacitance - 86 - f = 1.0MHz, See Fig. 5
MOSFET Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current(Body Diode) - - -2.0
ISM Pulsed Source Current (Body Diode) - - -27 A
VSD Body Diode Forward Voltage - - -1.2 V To = 25°C, Is = -2.0A, VGS = 0V
trr Reverse Recovery Time (Body Diode) _- 54 80 ns To = 25°C, IF = -2.0A
Gr Reverse Recovery Charge - 85 130 nC di/dt = 100Alps©
Schottky Diode Maximum Ratings
Parameter Max. Units Conditions
If (av) Max. Average Forward Current 3.0 A 50% Duty Cycle. Rectangular Wave, TA = 57°C
See Fig. 21
ISM Max. peak one cycle Non-repetitive 490 A Sus sine or 3ps Rect. pulse Following any rated
Surge current 70 10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
Schottky Diode Electrical Specifications
Parameter Max. Units Conditions
me Max. Forward Voltage Drop 0.61 If = 3.0A, Tj = 25°C
0.76 If = 6.0A, Tj = 25°C
0.53 V If = 3.0A, T] = 125°C
0.65 If: 6.0A, T] = 125°C
Vrrm Max. Working Peak Reverse Voltage 60 v
Irm Max. Reverse LeakageCurrent 2.0 mA Vr = 60V T] = 25°C
30 T] = 125°C
Ct Max. Junction Capacitance 145 pF Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
2

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