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IRF7341IRN/a3149avai55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7341TRIORN/a95avai55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package


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IRF7341-IRF7341TR
55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
PD -91703A
|RF7341
HEXFET6 Power MOSFET
International
TOR Rectifier
o Generation V Technology
o Ultra Low On-Resistance -
q Dual N-Channel Mosfet sIErE1- 833301
0 Surface Mount G1 2 l 711101 VDSS = 55V
q Available in Tape & Reel S2 arf'- 6-CIIn D2
0 Dynamic dv/dt Rating G2 4 E,
5E D2 RDSW = 00509
Description Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
Fast Switching
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of SO-8
powerapplications. Withthese improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
Parameter Max. Units
Vros Drain- Source Voltage 55 V
ID @ TC = 25°C Continuous Drain Current, Ves @ 10V 4.7
ID @ Tc = 70°C Continuous Drain Current, VGS @ 10V 3.8 A
IDM Pulsed Drain Current (D 38
Po @Tc = 25°C Power Dissipation 2.0 W
PD @Tc = 70°C Power Dissipation 1.3
Linear Derating Factor 0.016 W/°C
VGS Gate-to-Source Voltage i 20 V
VGSM Gate-to-Source Voltage Single Pulse tp<10ps 30 V
EAS Single Pulse Avalanche Energy© 72
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
To, Tsms Junction and Storage Temperature Range -55 to + 150 t
Thermal Resistance
Parameter Typ. Max. Units
ROJA Maximum Junction-to-Ambient® - 62.5 °C/W
1
4/11/05

IRF7341 International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGS = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.059 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-SourceOn-Resistance - 0.043 O.050 Q VGS = 10V, ID = 4.7A ©
- 0.056 0.065 VGs = 4.5V, ID = 3.8A ©
VGS(th) Gate Threshold Voltage 1.0 - - V Vos = VCs, ID = 250pA
gis Forward Transconductance 7.9 - - S Vos = 10V, ID = 4.5A
loss Drain-to-Source LeakageCurrent _- _- 'if pA VS: : 22$ V2: : g, T: = 55°C
less Gate-to-Source Forward Leakage - - -100 n A VGS = -20V
Gate-to-Source Reverse Leakage - - 100 VGS = 20V
% Total Gate Charge - 24 36 ID = 4.5A
Qgs Gate-to-Source Charge - 2.3 3.4 nC Vros = 44V
di Gate-to-Drain ("Miller") Charge - 7.0 10 Was = 10V, See Fig. 10 ©
Won) Turn-On Delay Time - 8.3 12 N/oo = 28V
tr Rise Time - 3.2 4.8 ns ID = 1.0A
td(off) Turn-Off Delay Time - 32 48 Rs = 6.09
t, Fall Time - 13 20 RD = 289. (4)
Ciss Input Capacitance - 740 - l/ss = 0V
Coss Output Capacitance - 190 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 71 - f = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 2.0 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) OD - - 38 p-njunction diode. s
VSD Diode Forward Voltage - - 1.2 V TJ = 25°C, Is = 2.0A, l/ss = 0V ©
trr Reverse Recovery Time - 60 90 ns T: = 25°C, IF = 2.0A
Qrr Reverse RecoveryCharge - 120 170 nC di/dt = -100A/ps ©
Notes:
(D Repe.tithtralng; pulse width limited by (3 ISD s 4.7A, di/dt s 220Alps, VDD 5 V(BR)DSS,
max.junctiontemperature. ( See fig. 11 ) Trs 150°C
© Starting T: = 25''C, L = 6.5mH © Pulse width s 300ps; duty cycles 2%.
Rs = 259, IAS = 4.7A. (See Figure 8)
© When mounted on 1 inch square copper board, t<10 sec
2

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