IRF7335D1TRPBF ,30V Dual N Channel HEXFET Power MOSFET in a SO-14 packagePD- 95272®• Co-Pack Dual N-channel HEXFET Power MOSFET IRF7335D1PbFand Schottky Diode• Ideal for Sy ..
IRF7338 ,12V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 packagePD - 94372CIRF7338®HEXFET Power MOSFET Ultra Low On-ResistanceN-CHANNEL MOSFETN-Ch P-Ch18S1 D1 ..
IRF7338TR ,12V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 packagePD - 94372CIRF7338®HEXFET Power MOSFET Ultra Low On-ResistanceN-CHANNEL MOSFETN-Ch P-Ch18S1 D1 ..
IRF7338TR ,12V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 packagePD - 94372CIRF7338®HEXFET Power MOSFET Ultra Low On-ResistanceN-CHANNEL MOSFETN-Ch P-Ch18S1 D1 ..
IRF7338TRPBF ,12V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 packagePD - 95197IRF7338PbF®HEXFET Power MOSFET Ultra Low On-ResistanceN-CHANNEL MOSFETN-Ch P-Ch18S1 D1 ..
IRF7341 ,55V Dual N-Channel HEXFET Power MOSFET in a SO-8 packagePD -91703AIRF7341®HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance1 8S1 D1 Du ..
ISL12020M ,Real Time Clock with Embedded Crystal, ?ppm AccuracyBlock Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
ISL12024IBZ , Real-Time Clock/Calendar with Embedded Unique ID
ISL12026IBZ , Real Time Clock/Calendar with I2C Bus™ and EEPROM
ISL12027 ,Real Time Clock/Calendar with EEPROMApplications(8 LD SOIC)TOP VIEW• Utility Meters• HVAC EquipmentX1 V1 DD8• Audio/Video ComponentsX2 ..
ISL12027IBAZ-T , Real Time Clock/Calendar with EEPROM
ISL12027IV27AZ , Real Time Clock/Calendar with EEPROM
IRF7335D1TRPBF
30V Dual N Channel HEXFET Power MOSFET in a SO-14 package
International
:raRR3ctifier
. Co-Pack Dual N
-channel HEXFETE Power MOSFET
and Schottky Diode
. Ideal for Synchronous Buck DC-DC
Converters Up to 11A Peak Output
Low Conduction
Lead-Free
Low Switching Losses
Low Vf Schottky Rectifier
Losses
mi 14 31.02
mg QI 13 51.02
61$ 12 $1.02
(32E Esxoz
52E 10 $1.02
32$ Q2 E51132
32E E81132
Description
PD- 95272
IRF7335D1PbF
Dual FETKYTM
Co-Packaged Dual MOSFET Plus Schottky Diode
Device Ratings (Typ.Values)
and Schottky
Rrmnm 13.4 mg 9.6 m9.
Q,, 13 n0 18 nC
CL,, 5.5 nC 6.4 nC
v, 1.0V 0.43V
The FETKW" family of Co-Pack HEXFET®MOSFETS and Schottky diodes offers the designer an innovative, board space
saving solution for switching regulator and power management applications. Advanced HEXFEToMOSFETs combined
with low forward drop Schottky results in an extremely emcient device suitable for a wide variety of portable electronics
applications.
The SO-14 has been modmed through a customized leadframe for enhanced thermal characteristics and multiple die
capability making it ideal in a variety of power applications. Wlth these improvements multiple devices can be used in an
application with dramatically reduced board space. Internal connections enable easier board layout design with reduced
stray inductance.
Absolute Maxi
mum Ratings
Parameter Max. Units
Vos Drain-Source Voltage 30 V
ID @ TA = 25''C Continuous Drain Current, VGS @ ION/CO 10
ID @ TA = 70''C Continuous Drain Current, VGS @ ION/OD 8.1 A
IDM Pulsed Drain Current O) 81
PD @TA = 25°C Power Dissipation © 2.0 W
PD @TA = 70°C Power Dissipation© 1.3
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage i 12 V
EAS (6 sigma) Single Pulse Avalanche Energy © 50 mJ
TJ Operating Junction and -55 to + 150
TsTG Storage Temperature Range 00
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Symbol Parameter Typ. Max. Units
Rox Junction-to-Drain Lead 20
ReJA Junction-to-Ambient G) 62.5 °C/W
Notes (D through © are on page 12
08/16/06
IRF7335D1PbF International
IDR Rectifier
. . _ Q1-Control FET Q2-Synch FET
Electrical Characteristics & Schottky
Parameter Min Typ Max Min Typ Max Units Conditions
Drain-to-Source BVDSS 30 30 V l/ss = 0V, ID = 250pA
Breakdown Voltage
Breakdown Voltage AvaATJ 0.025 0.033 V Reference to 25°C, ID = 1.0mA
Tem. Coemcient
Static Drain-Source RDSW) 13.4 17.5 9.6 12.8 mg VGS = 4.5V, ID = 10A©
on Resistance
Gate Threshold Voltage VGSM 1.0 1.1 V VDS = VGSJD = 250pA
Drain-Source Leakage loss 30 30 pA Vos = 24V, VGS = 0
Current .
0.3 10 mA VDS = 24V, I/ss = 0, T] = 125°C
Gate-Source Leakage Isss i100 1100 nA VGs = t121/
Current
Forward Transconductance gFS 21 28 S VGS=5V, |D=8.0A, VDS=15V
Total Gate Charge QG 13 20 18 27 VGS=4.5V, ID=8.0A, VDS=15V
Pre-Vth Qss, 3.2 5.8
Gate-Source Charge
Post-Vth Qss, 1 .4 1.5 nC
Gate-Source Charge
Gate to Drain Charge %, 4.1 4.9
Switch Chg(Q952 + di) st 5.5 6.4
Output Charge 0055 7.7 11 nC VDs = 16V, VGS = 0
Gate Resistance Rs 4.3 10 2.6 5.0 Q
Turn-on Delay Time tum“) 6.8 8.8 Va, = 16V, r, = 8.0A
Rise Time t, 5.9 3.3 ns VGs = 4.5V
Turn-oft Delay Time t, (om 19 17 Clamped Inductive Load
Fall Time t, 9.1 7.0
Input Capacitance Ciss 1500 2300
Output Capacitance cu, 310 450 pF VDS = 15V, VGS = 0
Reverse Transfer Capacitance Cm, 140 180
Source-Drain Rating & Characteristics
Parameter Min Typ Max Min Typ Max Units Conditions
Continuous Source Current Is 10 10 A MOSFET symbol D
(Body Diode) showing the
Pulse Source Current Is,, 81 81 intergral reverse
(Body Diode) p-n junction diode s
Diode Forward Voltage VSD 1 1.25 0.43 0.50 V T, = 25°C, IS = 1.0A,VGS= 0V
Reverse Recovery Time trr 28 31 ns T, = 125°C, l, = 8.0A, VR-- 15V
Reverse Recovery Charge q, 24 26 nC di/dt = 100/Ups
Reverse Recovery Time t, 29 31 ns T, = 125°C, l, =8.0A, v,,-- 15V
Reverse Recovery Charge q, 26 26 nC di/dt =100A/ps
2
