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IRF7325TRPBF
12V Dual P Channel HEXFET Power MOSFET in a SO-8 package
PD- 95721
International
TOR Rectifier IRF7325PbF
HEXFET© Power MOSFET
o Trench Technology VDss RDS(on) max (mQ) ID
q Ultra Low On-Resistance M2V 24@Ves = -4.51/ $7.8A
0 Dual P-Channel MOSFET
q Low Profile (<1.8mm)
0 Available in Tape & Reel
. Lead-Free
33@VGs=-2.5V 16.2A
49@VGS=-1.8V A3.9A
Description
New P-Channel HEXFETO power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance 1 8
per silicon area. This beneht, combined with the SICW]'- LIL DI
ruggedized device design that HEXFET Power G1 2 l 73]: DI
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use S2 [rrE3- 6311 D2
in a wide variety of applications. l
G2 4 53]: D2
The SO-8 has been modihed through a customized
leadframe for enhanced thermal characteristics and Top View SO-8
multiple-die capability making it ideal in a variety of
powerapplications. VWhthese improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain- Source Voltage -12 V
ID @ TA = 25''C Continuous Drain Current, Ves @ -4.5V -7.8
ID @ TA-- 70°C Continuous Drain Current, VGS @ -4.5V -6.2 A
IDM Pulsed Drain Current (D -39
Po @TA = 25°C Power Dissipation © 2.0 W
Po @TA = 70''C Power Dissipation © 1.3
Linear Derating Factor 16 mW/°C
Vss Gate-to-Source Voltage 1 8.0 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Symbol Parameter Typ. Max. Units
Ron, Junction-to-Drain Lead - 20
ReJA Junction-to-Ambient © - 62.5 °CNV
1
1 0/4/04
IRF7325PbF International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -12 - - V VGS = 0V, ID = -250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.007 - V/°C Reference to 25''C, ID = -1mA
RDs(on) Static Drain-to-Source On-Resistance - - 24 V63 = -4.5V, ID = -7.8A ©
- - 33 m9 VGS = -2.5V, ID = -6.2A ©
- - 49 Vcs = -1.8V, ID = -3.9A ©
VGS(th) Gate Threshold Voltage -0.40 - -0.90 V Vos = VGS, ID = -250pA
gis Forward Transconductance 17 - - S Vos = -10V, ID = -7.8A
loss Drain-to-Source Leakage Current - - -1.0 y A VDs = -9.6V, VGS = 0V
- - -25 V93 = -9.6V, Vss = 0V, T: = 70°C
less Gate-to-Source Forward Leakage - - -100 n A VGs = -8.0V
Gate-to-Source Reverse Leakage - - 100 VGs = 8.0V
Qg Total Gate Charge - 22 33 ID = -7.8A
Q95 Gate-to-Source Charge - 5.0 7.5 no Vos = -6.OV
di Gate-to-Drain ("Miller") Charge - 4.7 7.0 VGS = -4.5V
tdmn) Turn-On Delay Time - 9.4 - ns N/oo = -6.0V
tr Rise Time - 9.8 - ID = -1.0A
td(off) Turn-Off Delay Time - 240 - RD = 6.09
tf Fall Time - 180 - VGs = -4.5V ©
Ciss Input Capacitance - 2020 - VGs = 0V
COSS Output Capacitance - 520 - pF Vos = -10V
Crss Reverse Transfer Capacitance - 330 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.0 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) (D - - -39 p-n junction diode. S
Vso Diode Forward Voltage - - -1.2 V To = 25°C, Is = -2.0A, VGS = 0V ©
trr Reverse Recovery Time - 36 54 ns To = 25°C, IF = -2.0A
Qrr Reverse Recovery Charge - 28 42 nC di/dt = -100A/ps ©
Notes:
co Repetitive rating; pulse width limited by (3 When mounted on 1 inch square copper board.
max. junction temperature.
C) Pulse width S 400ps; duty cycle S 2%.
2
